DENSHI Search Results

G1216B1N000

Abstract: Seimitsu CR-100 G1216B1NOOO Minolta CR 200 DISPLAY SEIKO general instrument 1976 page 25 Data Vision 128x64 G1216 seiko LCD display
Contextual Info: For evaluation Issued date JUNE 15, 1993 Spec. No. MG 1216B1N000-002 LIQUID CRYSTAL DISPLAY MODULE G 1 2 1 6 B 1 N 0 0 Q PRODUCT SPECIFICATION A PPRO VA L _ Seiko Instruments Inc. Display Division Seiko Instruments Inc. QA Akita Seimitsu Denshi Kogyo Co.,Ltd

Contextual Info: KO DENSHI CORP SSE D • t - ktjumtiy * h y—u sg- i iFKTt^v > h > & # i* £ fc - t+ fc 3 g ;s i! 7 * M ' v ^ T ^ - r ' - r , S 542bQ a O Q Q Q Sbl =1 ■ J M N ’ iS D IM E N S IO N S Unit: mm K ttir tv u. The SG-11FKT, photointerrupter combines a high-output

Contextual Info: K O DENSHI CORP 25E D • SS4SbDfl 000023,1 T ■ CL-lKL3 is TO -18? 4 t - K T -fo 5 6 ftH j* GaAs? -f 7”(C]:bLTgi < ^ o T l ' i T , (Po = Typ. 30mW/sr 7- /_ 1 3 DIMENSIONS (Unit: mm) The CL-1KL3 is a high-power GaAMs IRED mounted in a durable, hermetically sealed TO-18 matal can package. The

denshi

Contextual Info: Susumu World Group Companies THIN FILM TECH N O LO GY TeT H Thin Film Technology Corp. C7cyntec SUSUMU COMPANY, LTD. 14 Umamawashi-Cho, Kamitoba, Minami-Ku Kyoto, Japan 601-8177 +81 75-671-7371 +81 75 671-7374 fax www.susumu.co.jp THIN FILM TECHNOLOGY CORPORATION

MARKING CODE smd R05

Contextual Info: A E 14 0Y 1 00034 Ver.1.01 SPECIFICATION SMD INDUCTORS COMPACT TYPE BRFL2518TYPE TAIYO YUDEN AE140 Y 100034V101 Specifications BRFL2518 TYPE (1/11) 1. Range of application This specification sheet applies to SMD inductor(compact type), BRFL2518. 2. Ordering code

Contextual Info: 2SK3535-01 500 FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E AV =f(starting Tch):Vcc=48V,I(AV)<=25A Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch):Vcc=48V 2SK3535-01 FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET

Contextual Info: 2SK3514-01 FUJI POWER MOSFET 2SK3514-01 FUJI POWER MOSFET Super FAP-G Series 10 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof D=0.5 0.1 10 0.05 -1 0.02 Applications 0.01 10 t -2 D= Switching regulators UPS Uninterruptible Power Supply

Contextual Info: 2SK3517-01 FUJI POWER MOSFET 2SK3517-01 FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings o Zth ch-c [ C/W] 10 1 10 TO-220AB Features Transient Thermal Impedance Zth(ch-c)=f(t):Duty=0 High speed switching Low on-resistance

earth leakage circuit

Abstract: CR02AM M54122L Circuit breaker Mitsubishi ua417 M54122 CR03AM leakage circuit breaker scr gate driver ic 600 A 12v dc power supply circuit
Contextual Info: MITSUBISHI <CONTROL / DRIVER IC> M54122L EARTH LEAKAGE CURRENT DETECTOR The M54122L is a semiconductor integrated circuit with amplifier for a high-speed earth leakage circuit breaker. FEATURES ● Suitable for JIS C 8371 ● Good temperature characteristics of input sensitivity current

earth leakage circuit

Abstract: TRC2 wiring diagram for LCS scr driving M54128 M54128FP M54128L scr drive control Circuit breaker Mitsubishi scr drive circuit
Contextual Info: MITSUBISHI <CONTROL / DRIVER IC> M54128L/FP EARTH LEAKAGE CURRENT DETECTOR DESCRIPTION PIN CONFIGURATION TOP VIEW The M54128 is a semiconductor integrated circuit designed for high-speed type earth leakage breakers. This lC includes leakage and abnormal voltage detecting functions.

chage leak battery

Abstract: 103HT 16P2E M62253AGP M62253BGP M62253A
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

diode FR 105

Abstract: 2SK3613-01
Contextual Info: 2SK3613-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FUJI POWER MOS FET Super FAP-G Series OUT VIEW Outline Drawings Drawings mm (mm) 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

DVD CD 5888

Abstract: dvd D 5888 s 1550nm Laser Diode with butterfly pin package NX8346 PS9553 PS9317 PS9301 MAN light EDFA dwdm tosa TOSA ROsa
Contextual Info: Opto-Electronics Devices Opto-Electronics Devices Home Page http://www.necel.com/opto/ Opto-Electronics Devices, Supporting the Global Information Network Since the dawn of time man has been fascinated by the nature of light. Only recently has he discovered light’s ability to transmit vast quantities of information.

endrich

Abstract: SUSUMU INTERNATIONAL USA
Contextual Info: D istributors and C ontacts Europe Finland Germany Switzerland MELART COMPONENTS SUSUMU DEUTSCHLAND GmbH QUARZ AG Masalantie 375 Fin-02430, Masala, Finland tel: +358-9-2219-1400 fax: +358-9-2219-1444 melart.elektroniikka@nylund.fi Koelner Strasse 10b. 5OG

Contextual Info: HMCS402C/CL/AC— HMCS404C/CL/AC HMCS408C/CL/AC D e sc rip tio n T y p e of P ro d u c ts T he H M C S402/404/408 a re HM CS400 se rie s CMOS 4 -b it sin g le -c h ip m ic ro c o m p u te rs. E ach d ev ice in c o rp o ra te s a ROM, RAM, I/O , serial in te rfa c e, 2 tim e r/c o u n te rs , a n d h ig h v o lta g e I/O p in s in c lu d in g h ig h -c u rre n t o u t­

Contextual Info: 2SK3501-01 Super FAP-G Series FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

125MH

Contextual Info: 2SK3685-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

Contextual Info: 2SK3676-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS Uninterruptible Power Supply

Diode SJ 14

Contextual Info: 2SK3526-01L,S,SJ FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply

270 ohm resistor

Abstract: Cyntec
Contextual Info: Thin Film Chip Resistor RR Series 1.0 Description Thin Film Technology has achieved high performance chip resistors with low price and reliable supply. The parts offer excellent performance and tolerance in TCR, current noise, linearity, and are intended for high frequency

2sk3469

Abstract: 2SK3469-01MR *k3469
Contextual Info: 2SK3469-01MR Super FAP-G Series FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

Contextual Info: 2SK3520-01MR Super FAP-G Series FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

Contextual Info: 2SK3651-01R [0311] FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-3PF High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)

2sk3699

Abstract: 2sk3699-01mr
Contextual Info: 2SK3699-01MR FUJI POWER MOSFET 200305 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators