DECOUPLING Search Results
DECOUPLING Price and Stock
TDK Corporation NLCV32T-1R0M-PFRF Inductors - SMD SUGGESTED ALTERNATE NLCV32T-1R0M-EF |
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NLCV32T-1R0M-PF | Reel | 112,000 | 2,000 |
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TDK Corporation NLCV32T-100K-EFRDRF Inductors - SMD 10uH 0.42ohms 600mA 3.2x2.5mm AEC-Q200 |
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NLCV32T-100K-EFRD | Reel | 82,000 | 2,000 |
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TDK Corporation NLCV32T-100K-PFRF Inductors - SMD SUGGESTED ALTERNATE NLCV32T-100K-EF |
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NLCV32T-100K-PF | Reel | 58,000 | 2,000 |
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TDK Corporation NLCV32T-100K-PFRRF Inductors - SMD SUGGESTED ALTERNATE NLCV32T-100K-EFR |
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NLCV32T-100K-PFR | Reel | 22,000 | 2,000 |
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TDK Corporation NLCV32T-470K-PFRF Inductors - SMD SUGGESTED ALTERNATE NLCV32T-470K-EF |
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NLCV32T-470K-PF | Reel | 22,000 | 2,000 |
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DECOUPLING Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Spec Sheet CERAMIC CAPACITORS LW Reversal Decoupling Capacitors LWDC(TM JWK107BJ475MV-T Features Item Summary 6.3V, X5R, 4.7 F, ±20%, 0306 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping Embossed 4000pcs Products characteristics table |
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JWK107BJ475MV-T 4000pcs X5R/-55 | |
Contextual Info: Power Modules Power Modules Horizontal Versions for Plug-in With decoupling diodes RENATA No. 1000-1B Nominal capacity mAh Nominal voltage (V) 950 3 Operating temperature range: Self-discharge rate: Specifications - module housings: - plug-in pins: Encapsulated Weight |
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CR2477N 1000-1B CH-4452 | |
mlz2012
Abstract: MLZ2012N100LT MLZ2012N MLZ2012M MLZ1608N100LT MLZ2012N4R7 MLZ1608A mlz1608m220 MLZ2012M150W MLZ1005M1R0W
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MLZ1005W MLZ1608 MLZ2012 2002/95/EC, MLZ1005W 300min. 160min. 200min. 60min. MLZ2012N100LT MLZ2012N MLZ2012M MLZ1608N100LT MLZ2012N4R7 MLZ1608A mlz1608m220 MLZ2012M150W MLZ1005M1R0W | |
Contextual Info: SRAM AS8S128K32 128K x 32 SRAM PIN ASSIGNMENT SRAM MEMORY ARRAY Top View AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-95595: -Q • SMD 5962-93187: -P or -PN • MIL-STD-883 FEATURES • Access times of 15, 17, 20, 25, 35, and 45 ns • Built in decoupling caps for low noise operation |
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AS8S128K32 MIL-STD-883 256Kx16 5962-9318705H4A 5962-9318705H4C 5962-9318706H4A 5962-9318706H4C 5962-9318707H4A 5962-9318707H4C 5962-9318708H4A | |
Contextual Info: DUAL-IN-LINE SOCKETS With Integral Decoupling Capacitor Open Frame Series 110, 122, 123.801 • Low profile DIP sockets with integral decoupling capacitor: .1 F 20%-50V multi-layer ceramic epoxy encapsulated. Temp. range: -25° C to +85° C. • Hi-Rel, 4-finger BeCu #30 |
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Info624-41-801000 110-XX-628-41-801000 110-XX-632-41-801000 110-XX-640-41-801000 123-XX-624-41-801000 123-XX-628-41-801000 123-XX-632-41-801000 123-XX-640-41-801000 2002/95/EC | |
r60 mkt
Abstract: 3330-6-R60IF r60 mkt 400 A r60 mkt 400 22 CAPACITOR R60II R60PF r60er5100 1470 LM R60PR4150 capacitor polyester mkt 400v
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630Vdc) 1000Vdc) 1x10-9 005xinitial r60 mkt 3330-6-R60IF r60 mkt 400 A r60 mkt 400 22 CAPACITOR R60II R60PF r60er5100 1470 LM R60PR4150 capacitor polyester mkt 400v | |
bav40
Abstract: IP4778CZ38 TSSOP38
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IP4778CZ38 IP4778CZ38 bav40 TSSOP38 | |
APT0406
Abstract: APT0502 APTGT30X60T3G
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APTGT30X60T3G APT0406 APT0502 APTGT30X60T3G | |
APT0406
Abstract: APT0502 APTGT35X120T3G
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APTGT35X120T3G APT0406 APT0502 APTGT35X120T3G | |
APT0406
Abstract: APT0502
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APTGF25X120T3G APT0406 APT0502 | |
capacitor 250 mkt 0.1
Abstract: mkt 0.68UF marking code 015g
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17-May-00 capacitor 250 mkt 0.1 mkt 0.68UF marking code 015g | |
Contextual Info: E l Stanford Microdevices Product Description SNA-200 Stanford Microdevices' SNA-200 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides !6dB of gain when biased at 50mA and 4V. DC-6.5 GHz, Cascadable GaAs MMIC Amplifier External DC decoupling capacitors determine low frequency |
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SNA-200 SNA-276, SNA-200 84-1LMIT1 | |
sc 8256
Abstract: SNA586 SNA-586
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SNA-586 SNA-500) SNA-586 sc 8256 SNA586 | |
Contextual Info: CONDUCTIVE POLYMER ALUMINUM SOLID CAPACITORS Surface Mount @Super low ESR, impedance and high heat resistance have been obtained by using conductive polymer as electrolyte. @Suitable for DC-DC converters, voltage regulators and decoupling applications. @Endurance : 125C 1,000 hours |
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20Vdc, 000MF F10B7 20Vdc APXH2R5ARA221MF60G APXH2R5ARA561MH70G APXH2R5ARA102MJ80G APXH4R0ARA151MF60G APXH4R0ARA221MH70G APXH4R0ARA681MJ80G | |
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MSC23832D
Abstract: MSC23832D-60BS16
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MSC23832D-xxBS16/DS16 608-word 32-bit MSC23832D-xxBS16/DS16 72-pin MSC23832D MSC23832D-60BS16 | |
Contextual Info: CONDUCTIVE POLYMER ALUMINUM SOLID CAPACITORS @Super low ESR, high ripple current capability @Lower profile than PSA F8B8L to F10B12.5L @Rated voltage range : 2.5 to 16Vdc @Nominal capacitance range : 270 to 2,700MF @Endurance : 2,000 hours at 105C @Suitable for DC-DC converters, voltage regulators and decoupling applications |
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F10B12 16Vdc 700MF 820MF 500MA, 10B11 10B12 | |
Contextual Info: CONDUCTIVE POLYMER ALUMINUM SOLID CAPACITORS @Super low ESR, high ripple current capability @Lower profile than PSA F8B8L to F10B12.5L @Rated voltage range : 2.5 to 16Vdc @Nominal capacitance range : 270 to 2,700MF @Endurance : 2,000 hours at 105C @Suitable for DC-DC converters, voltage regulators and decoupling applications |
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F10B12 16Vdc 700MF 820MF 500MA, 10B11 10B12 | |
Contextual Info: Z5U & Y5V DIELECTRICS General purpose EIA Class III dielectrics with +22% to -56% Z5U and +22% -82% (Y5V) temperature coefficients and very high capacitance density. The NOVACAP Z5U and Y5V formulations are very stable with time, typically aging less than 2% per decade. General purpose chips are used in by-pass and decoupling functions and other applications where capacitance change over the operating temperature range is not critical. |
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Contextual Info: LW逆転タイプ積層セラミックコンデンサ(LWDC) LW REVERSAL DECOUPLING CAPACITOR LWDC code Temp.characteristics operating Temp. range B −25~+85℃ BJ X5R −55∼+85℃ B7 X7R −55∼+125℃ OPERATING TEMP. C6 X6S −55∼+105℃ |
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NJM2831F05
Abstract: NJM2831F09 NJM2831F njm2831f33 NJM2831F-33 NJM2831F03 NJM2831F PACKAGE NJM2831 njm2831f06
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NJM2831 NJM2831 100mA NJM2831F 100mA NJM2831F05 NJM2831F09 NJM2831F njm2831f33 NJM2831F-33 NJM2831F03 NJM2831F PACKAGE njm2831f06 | |
capacitor Y5S 022
Abstract: cm z5u 0.033 m 3kv ceramic disc .01 1kv z5u cera-mite z5u 1kv z5u capacitor sprague cm z5u 6kv cera-mite z5u 3kv y5s 0022 CERA-MITE Y5V 2KV 10TCCT18
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DD21bSfl capacitor Y5S 022 cm z5u 0.033 m 3kv ceramic disc .01 1kv z5u cera-mite z5u 1kv z5u capacitor sprague cm z5u 6kv cera-mite z5u 3kv y5s 0022 CERA-MITE Y5V 2KV 10TCCT18 | |
WIMA MKS 33
Abstract: WIMA MKS-33
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MSC2323258DContextual Info: This version: Mar. 3. 1999 Semiconductor MSC2323258D-xxBS4/DS4 2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSC2323258D-xxBS4/DS4 is a fully decoded, 2,097,152-word x 32-bit CMOS dynamic random access memory module composed of four 16Mb DRAMs in SOJ packages mounted with eight decoupling capacitors on a |
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MSC2323258D-xxBS4/DS4 152-word 32-bit MSC2323258D-xxBS4/DS4 72-pin MSC2323258D | |
0Q171
Abstract: C11256 OPTI802GP burndy CONNECTOR TAG7_ equivalent SRAM timing c9539
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CYM9244, CYM9245 CYM9246, CYM9247 CYM9244 CYM9246) CYM9247) OPTI802GP 112-position 0Q171 C11256 burndy CONNECTOR TAG7_ equivalent SRAM timing c9539 |