DEC2008 Search Results

IDEC2008

Contextual Info: 4 T H 1S D R A W 1NG c IS 3 U N P U B L 1S H E D . RELEASED BY C O P Y R 1G H T 20 TYCO E L E C T R O N ICS CORPORATION. FOR ALL PUBLICATION RIGHTS - LOC REV I S IONS D IS T RESERVED. D E S C R I P T IO N REVISED u PER E CO - GS I DEC2008 V, v\ T )o j >

T1M5F600D

Abstract: t1m5f-600 VGT4
Contextual Info: LITE-ON SEMICONDUCTOR Sensitive Gate Triacs Sillicon Bidirectional Thyristors T1M5F600D TRIACs 1.0 AMPERES RMS 600 VOLTS SOT-223 FEATURES SOT-223 Sensitive Gate Trigger Current in Four Trigger Modes Blocking Voltage to 600 Volts Glass Passivated Surface for Reliability and Uniformity

L30ESD12VC3-2

Abstract: 15KV
Contextual Info: L30ESD12VC3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 12 Volts POWER DISSIPATION - 300 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION SOT23 The L30ESD12VC3-2 is a dual voltage suppressor designed to protect components which are connected to data and transmission linew against Electro Static Discharge ESD .

Contextual Info: LITE-ON SEMICONDUCTOR L15ESD12VE2 STAND-OFF VOLTAGE - 12 Volts POWER DISSIPATION - 150 WATTS ESD PROTECTION DIODE GENERAL DESCRIPTION SOD-882 The L15ESD12VE2 is designed to protect sensitive semiconductor components from damage or upset due to Electro Static Discharge

Contextual Info: L18ESD12VA2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 12 Volts POWER DISSIPATION - 180 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION SOD523 The L18ESD12VA2 is designed to protect sensitive semiconductor components from damage or upset due to Electro Static Discharge ESD .

P6KE18CA

Abstract: P6KE43CA p6ke6,8a
Contextual Info: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS P6KE SERIES REVERSE VOLTAGE - 6.8 to 550 Volts POWER DISSIPATION - 600 WATTS DO-15 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability

kbp208gl

Abstract: KBP206GL KBP204GL
Contextual Info: KBP204GL~KBP210GL GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE – 400 to 1000 Volts FORWARD CURRENT – 4.0 Ampere FEATURES KBP • Rating to 1000V PRV • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique

3045CT

Abstract: 3060ct MBR3030CT MBR3060CT
Contextual Info: LITE-ON SEMICONDUCTOR MBR3030CT thru 3060CT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 30 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

KBP204G

Abstract: KBP208G KBP206G KBP210G
Contextual Info: KBP204G~KBP210G GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE – 400 to 1000 Volts FORWARD CURRENT – 2.0 Ampere FEATURES KBP • Rating to 1000V PRV • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique

567243

Abstract: list of scr WIRE DISC AMP applicator AMP crimper 408-8040 691353-1 DEC2008 32x46 408-8040 DMC70-1/A
Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 567243 567243 567243 7-567243 4 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. PART NUMBER 5 6 REV F IR S T USED N N N N -1 -2 -3 -7 RAM R E T A IN IN G PLATE R EF M A C H IN E FRAME ( f?e f ) ALL RIGHTS RESERVED.

D 1307

Abstract: t1m5f VGT4
Contextual Info: LITE-ON SEMICONDUCTOR T1M5F800AF TRIACs 1.0 AMPERES RMS 800 VOLTS Sensitive Gate Triacs Sillicon Bidirectional Thyristors TO-92 TO-226AA FEATURES TO-92 Dim. Min Typ Max -4.20 -A B -3.70 4.43 -4.83 C D 13.07 -14.87 -0.40 E F 4.43 -4.83 -0.45 G -2.54 -H

Contextual Info: TH I S D R A W I NG IS UNPUBL I S H E D . RELEASED BY C O P Y R I G H T 20 TYCO ELECTRONICS CORPORATION, FOR ALL PUBLICATION RIGHTS LOC REV IS IONS D I ST RESERVED. D E S C R I P T I ON R E L TO A C T I V E PER E C R - MAT E R I A L : PLUG H OUS I NG: PBT, COLOR:

AON7410

Abstract: AON7410l
Contextual Info: AON7410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON7410/L uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in DC - DC converters and Load Switch applications.

15KV

Contextual Info: L18ESD12VA2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 12 Volts POWER DISSIPATION - 180 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION SOD523 The L18ESD12VA2 is designed to protect sensitive semiconductor components from damage or upset due to Electro Static Discharge

Contextual Info: TH I S DRAW ING IS UNPUBLI S H E D . C O P Y R I G H T 20 RELEASED BY TYCO ELECTRONICS FOR CORPORATION. ALL PUBLICATION RIGHTS LOC D I ST RE V I S I ONS RESERVED. D E S C R I P T I ON H6 TEST PER •0 30369 E CO - 20 N/A 3.5 - 30 6 3-282836-4 N/A 3.5 - 25