DEC200 Search Results

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. DIST 16 AJ BY TYCO ELECTRONIC5 CORPORATION. REVISIONS LTR DESCRIPTION R DATE PER EC 05 14- 01 84— 04 0 1 DEC2004 OWN APVD JGH JL D IE L E C T R IC 1\ CONTACT PER Q Q - Z - 3 6 3

Contextual Info: n H 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - ,- LOG ALL RIGHTS RESERVED. DIST R E V IS IO N S H p LTR DESCRIPTION 0 2 DATE ECR — 0 7 —0 3 0 9 1 9 DWN 2 1 DEC2007 APVD JvH BM 21,90 SECTION A - A

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 2 1 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. D IST R E V ISIO N S 16 AJ LTR DESCRIPTION L DATE PER EC 0 5 1 4 - 0 1 8 4 - 0 4 DWN 0 1 DEC2004 APVD JGH JL D D 20.57 MAX

IDEC2008

Contextual Info: 4 T H 1S D R A W 1NG c IS 3 U N P U B L 1S H E D . RELEASED BY C O P Y R 1G H T 20 TYCO E L E C T R O N ICS CORPORATION. FOR ALL PUBLICATION RIGHTS - LOC REV I S IONS D IS T RESERVED. D E S C R I P T IO N REVISED u PER E CO - GS I DEC2008 V, v\ T )o j >

Contextual Info: 3 4 THIS DRAWING IS U N P U B LIS H E D . COPYRIGHT - RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - 2 REVISIONS - ALL INTERNATIONAL RIGHTS RESERVED. H LTR DES C RIPTIO N M2 REV PER ECR—0 9 —0 2 7 6 5 5 N ECR-10- 018652 DATE DWN APVD 2 1 DEC2009

Contextual Info: TH I S DRAW ING I S C O P Y R IG H T U NPUBLI SHED. 20 R E L E A S E D BY TYCO E L E C T R O N IC S C O R P O R A T IO N FOR ALL P U B L IC A T IO N R IG H T S 20 LOC REV I S IONS D I ST R E S E R V E D . LTR D E S C R IP T IO N DWN DATE RELEASED REVISED : I DEC2007

STPR1660CT

Abstract: STPR1210CT 1220CT
Contextual Info: LITE-ON SEMICONDUCTOR STPR1210CT thru 1260CT REVERSE VOLTAGE - 100 to 600 Volts FORWARD CURRENT - 12 Amperes SUPER FAST GLASS PASSIVATED RECTIFIERS TO-220AB FEATURES Glass passivated chip Superfast switching time for high efficiency Low forward voltage drop and high current capability

T1M5F600D

Abstract: t1m5f-600 VGT4
Contextual Info: LITE-ON SEMICONDUCTOR Sensitive Gate Triacs Sillicon Bidirectional Thyristors T1M5F600D TRIACs 1.0 AMPERES RMS 600 VOLTS SOT-223 FEATURES SOT-223 Sensitive Gate Trigger Current in Four Trigger Modes Blocking Voltage to 600 Volts Glass Passivated Surface for Reliability and Uniformity

L30ESD12VC3-2

Abstract: 15KV
Contextual Info: L30ESD12VC3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 12 Volts POWER DISSIPATION - 300 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION SOT23 The L30ESD12VC3-2 is a dual voltage suppressor designed to protect components which are connected to data and transmission linew against Electro Static Discharge ESD .

STPR610D

Abstract: 610D 630D 650D STPR660D stpr640d
Contextual Info: LITE-ON SEMICONDUCTOR STPR610D thru STPR660D REVERSE VOLTAGE - 100 to 600 Volts FORWARD CURRENT- 6.0 Amperes POWER FACTOR CORRECTION RECTIFIERS PFC DIODE TO-220AC FEATURES Power Factor Correction function. Glass passivated chip Superfast switching time for high efficiency

Contextual Info: LITE-ON SEMICONDUCTOR L15ESD12VE2 STAND-OFF VOLTAGE - 12 Volts POWER DISSIPATION - 150 WATTS ESD PROTECTION DIODE GENERAL DESCRIPTION SOD-882 The L15ESD12VE2 is designed to protect sensitive semiconductor components from damage or upset due to Electro Static Discharge

Contextual Info: L18ESD12VA2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 12 Volts POWER DISSIPATION - 180 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION SOD523 The L18ESD12VA2 is designed to protect sensitive semiconductor components from damage or upset due to Electro Static Discharge ESD .

Contextual Info: THIS C D R A WI N G IS UNPUBLISHED. C O P Y R 1G H T 20 RELEASED BY TYCO ELECTRONICS CORPORATION. F OR ALL PUBLICATION RIGHTS 20 REV I S IONS D I ST RESERVED. GE 00 DESCRIPTION LTR H2 DWN DATE APVD R E V I S E D P ER ECO- 0 6 - 0 2 4 4 4 3 09MAR2007 AS AS

Contextual Info: LITE-ON SEMICONDUCTOR L35ESDL5V0CB2 STAND-OFF VOLTAGE – 5.0 Volts POWER DISSIPATION – 350 WATTS ESD PROTECTION DEVICE SOD-323 GENERAL DESCRIPTION Ultra low capacitance bidirectional ElectroStatic Discharge ESD protection diodes in small Surface-Mounted Device (SMD) plastic

Contextual Info: LITE-ON SEMICONDUCTOR MBRF1060CT REVERSE VOLTAGE - 60 Volts FORWARD CURRENT - 10 Amperes SCHOTTKY BARRIER RECTIFIERS ITO-220AB FEATURES ITO-220AB M B K DIM. MIN. 15.50 10.0 3.00 MAX. 16.50 10.40 3.50 A C A B C D D E PIN 1 2 3 F E Metal of silicon rectifier,majority carrier conducton

5KE200A

Abstract: 1.5ke200a 1.5KE-82CA
Contextual Info: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS 1.5KE SERIES REVERSE VOLTAGE - 6.8 to 440 Volts POWER DISSIPATION - 1500 WATTS DO-201 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit

NTC SG 301

Abstract: WTC3243 AD590 and LM335 ad590 application lm335 ad590 data sheet Lm335 temperature sensor IC AD590 LM335 WHS302
Contextual Info: WTC3243HB Ultrastable Thermoelectric Controller Warning: This is a Low Voltage Device BOTTOM VIEW GENERAL DESCRIPTION: The WTC3243 is a powerful, compact analog PI (Proportional, Integral) control loop circuit optimized for use in ultrastable thermoelectric

UMC PMIC

Abstract: offline switcher ARM926 ARM926EJ-S LP5550 powerwise interface National Semiconductor Simplifying Power Design national pwi bus ARM ARCHITECTURE Semiconductor
Contextual Info: Optimizing the Power for Multiple Voltage Domains Juha Pennanen 1 What Consumers Care About • Demand for feature rich phones increases the importance of advanced system level Power Management • Users of battery-powered, handheld devices care about –

AN9321

Abstract: AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS
Contextual Info: ISL9N312ASK8T Data Sheet January 2002 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. PWM Optimized Features

KXSS5-3028

Abstract: LGA36 0x89h KXSS5
Contextual Info: PART NUMBER: ±3g Tri-axis Accelerometer Specifications KXSS5-3028 Rev. 2 Dec-2009 Product Description The KXSS5-3028 is a Tri-axis, silicon micromachined accelerometer with a full-scale output range of +/-3g 29.4 m/s/s . The sense element is fabricated using Kionix’s proprietary plasma micromachining process

Contextual Info: PWM Optimized ISL9N308AP3/ISL9N308AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

Contextual Info: GigaComm Device Data DLD604/D Rev. 0, Dec-2002  SCILLC, 2002 “All Rights Reserved”

Contextual Info: 4 THIS DRAWING IS U N P U B LISH E D . COPYRIGHT 3 RELEASED BY TYCO ELECTRONICS CORPORATION. 2 FOR PUBLICATION A LL RIGHTS 1 D IS T RESERVED . R E V IS IO N S DW p LTR D ESC RIP TIO N E1 6.00 REF REVISED ECR-1 3-01 0725 DATE DWN APVD 04JU L13 JL WK 0 .7 0 REF

TQFP32 footprint

Abstract: TRANSISTOR BC 157 ST72F32AJ2
Contextual Info: ST7232A 8-BIT MICROCONTROLLER WITH 8K FLASH/ROM, ADC, 4 TIMERS, SPI, SCI INTERFACE • ■ ■ ■ ■ ■ Memories – 8K dual voltage High Density Flash HDFlash or ROM with read-out protection capability. InApplication Programming and In-Circuit Programming for HDFlash devices