DEC00ER Search Results

NMC27C256

Contextual Info: NMC27C512A 524,288-Bit 64k x 8 UV Erasable CMOS PROM General Description Features The NMC27C512A is a high-speed 512k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern experimenta­ tion and low power consumption are important require­

XO-31

Abstract: AAD00-AAD04 wtl3164 weitek NS32580-30 NS32081
Contextual Info: PRELIMINARY NS32580-20/NS32580-25/NS32580-30 Floating Point Controller G eneral Description The NS32580 Floating-Point Controller FPC is an interface device designed to couple the NS32532 Microprocessor with the Weitek WTL 3164 Floating-Point Data Path (FPDP).

A11A

Abstract: PX434 ZEL MA 30 VU
Contextual Info: HY5116404A Series HYUNDAI 4M X 4-bit CMOS DRAM with Extended Data out DESCRIPTION The HY5116404A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit The HY5116404A utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

schematic diagram tv sony kv 2197

Abstract: scheme tv color tucson LOG100 ADC600 ISO106 sony ccd ADC-817 adc817 SDM857 SHC76
Contextual Info: HOW TO USE THIS BOOK If you know the MODEL NUMBER, Use the Model Index on the INSIDE FRONT COVER. If you know the PRODUCT TYPE, Use the TABBED TABLE OF CONTENTS on page v. Or, use the SELECTION GUIDE TABLES at the front of each tabbed section. If you know the M ODEL

HM-6322

Abstract: 14AS6 HM-6503 HM-6503-5 HM-6503-9 HM-6503H HM-6503L HM-6504 M650-4
Contextual Info: H A R R IS 3 l i iv/I A DIVISION OF H A R RIS CORPORATION! ^ ^ LO W POWER S T A N D B Y • LO W POW ER O P E R A T IO N • E X T R E M E L Y LO W SPEED POW ER P R O D U C T • D A T A R E T E N T IO N Pinout TO P V IE W 2 5 0 /iW M A X . 35 m W /M H z M A X .

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6257B 2 5 6 K x 1 Nibble Mode Dynam ic RAM The MCM6257B is a 262,144 bit, high-speed, dynamic random access memory. Organized as 262,144 one-bit words and fabricated using N-channel silicon-gate MOS technology, this single + 5 volt supply dynamic RAM combines high performartce with

Contextual Info: HY51V16404A Series -HYUNDAI 4M X 4-bit CMOS DRAM with Extended Data out DESCRIPTION The HY51V16404A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16404A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

a7e semiconductor

Abstract: J18A N18A NMC6552J-5 NMC6552J-9 mc6552 mc655
Contextual Info: NMC6552 National Semiconductor NMC65521024-Bit 256 x 4 Static RAM General Description Features The NMC6552 is a s ta tic CMOS random access read/w rite m em ory organized as 256 w ord s o f 4 b its each. This device is fab ricate d w ith N ation al S em icon ducto r’s sliicon-gate

HM-6513

Abstract: 6513 HD-6440 HM-6513-5 HM-6513H HM-6513L HM-6514
Contextual Info: Specifications H M -6513-5 OPERATING RANGE ABSOLUTE M A XIM U M RATINGS S u p p ly V o lta g e - V C C -G N D O p e ra tin g S u p p ly V o lta g e -0 .3 V t o + 8 .0 V C o m m e rc ia l In p u t o r O u tp u t V o lta g e A p p lie d 4 .5 V to 5 .5 V (G N D -0 .3 V )

Contextual Info: «21 RAD I A LL 2.5GHz 1,6/5.6 OPTIONS INDICATOR R 5 7 3 913380 TECHNICAL DATA SHEET N/0 S.P.3T. Page 1 12 SWITCH I BCD DECODER /SUPP.DIODES R F CHARACTERISTICS NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE V.S.W.R <= I-* FREQUENCY GHz o 1 3 0 - 2.5 GHz 75 Ohms

MCM62963A

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MCM62963A Product Preview 4K x 10 Bit Synchronous Static RAM with Output Registers The MCM62963A is a 40,960 bit synchronous static random access memory organized as 4096 words of 10 bits, fabricated using Motorola's second-generation high-performance

Contextual Info: HYUNDAI H Y 5 1 1 6 1 6 0 B Series 1M x 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

27C020

Abstract: 27C040 27C080 NM27P512 NSC800
Contextual Info: NM 27P512 524,288-B it 64K x 8 P rocessor O riented CM O S EPROM General Description Features The NM27P512 is a 512K Processor Oriented EPROM con­ figured as 64k x 8 . It’s designed to simplify microprocessor interfacing while remaining compatible with standard

Contextual Info: «21 RAD I ALL R 5 7 3 902680 TECHNICAL DATA SHEET 2.5GHz 1,6/5.6 N/0 S.P.6T. Page 112 SWITCH OPTIONS : I BCD DECODER /SUPP.DIODES R F CHARACTERISTICS NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE V.S.W.R <= I-* FREQUENCY GHz o 1 6 0 - 2.5 GHz 75 Ohms 1 - 2.5