DDR4 JEDEC Search Results
DDR4 JEDEC Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| CAB4AZNRR |
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DDR4RCD01 JEDEC compliant DDR4 Register for RDIMM and LRDIMM operation up to DDR4-2400 253-NFBGA 0 to 0 |
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| DDR4288V0923WF |
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DDR4 Memory Module Sockets | |||
| DDR4288S0213VF |
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DDR4 SMT | |||
| DDR4-288-S0111-HF |
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DDR4 SMT | |||
| DDR4288S0543HF |
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DDR4 SMT |
DDR4 JEDEC Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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DIMM DDR4 connector
Abstract: DDR4 GS-12-1092 DIMM DDR4 socket MO-309 GS-14-2267 DDR4 DIMM socket vertical DDR4 DIMM SO-016 DDR4 jedec
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MO-309. ELXDDR4MMS0113EA4 DIMM DDR4 connector DDR4 GS-12-1092 DIMM DDR4 socket MO-309 GS-14-2267 DDR4 DIMM socket vertical DDR4 DIMM SO-016 DDR4 jedec | |
MT40A512M8
Abstract: DDR4 PC4-2133 MTA9ASF51272PZ-2G1 DDR4 DIMM SPD JEDEC micron ddr4 DIMM DDR4 connector DDR4 jedec MTA9ASF51272PZ MO-309
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284-Pin MTA9ASF51272PZ 284-pin, PC4-2400, PC4-2133, PC4-1866 125mV 09005aef85197107 asf9c512x72pz MT40A512M8 DDR4 PC4-2133 MTA9ASF51272PZ-2G1 DDR4 DIMM SPD JEDEC micron ddr4 DIMM DDR4 connector DDR4 jedec MTA9ASF51272PZ MO-309 | |
DDR4
Abstract: DDR4 DIMM SPD JEDEC MTA9ASF51272AZ-2G1A1 DDR4 jedec micron ddr4 MO-309 DDR4-2133 MTA9ASF51272AZ MTA9ASF51272AZ-2G4 MT40A512M8
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284-Pin MTA9ASF51272AZ 284-pin, PC4-2400, PC4-2133, PC4-1866 512Meg 125mV 09005aef8519d7ca asf9c512x72az DDR4 DDR4 DIMM SPD JEDEC MTA9ASF51272AZ-2G1A1 DDR4 jedec micron ddr4 MO-309 DDR4-2133 MTA9ASF51272AZ MTA9ASF51272AZ-2G4 MT40A512M8 | |
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Contextual Info: PI2DDR3212 1.35V/ 1.5V/1.8V 14 bit 2:1 DDR3/DDR4 Switch Features Description ÎÎ14 bit 2:1 switch that supports DDR3 800 2133Mbps, DDR4 This 14-bit DDR3/DDR4 switch is designed for 1.35V/ 1.5V/ 1.8V supply voltage, POD_12, SSTL_135, SSTL_15 or SSTL_18 signaling and CMOS select input signals. It is designed for |
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PI2DDR3212 2133Mbps, 14-bit 2133Mbps PI2DDR3212 14-bit MO-220 52-Pin, PD-2102 | |
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Contextual Info: PI2DDR3212 1.35V/ 1.5V/1.8V 14 bit 2:1 DDR3/DDR4 Switch Features Description ÎÎ14 bit 2:1 switch that supports DDR3 800 2133Mbps, DDR4 This 14-bit DDR3/DDR4 switch is designed for 1.35V/ 1.5V/ 1.8V supply voltage, POD_12, SSTL_135, SSTL_15 or SSTL_18 signaling and CMOS select input signals. It is designed for |
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PI2DDR3212 2133Mbps, 14-bit 2133Mbps PI2DDR3212 14-bit MO-220 52-Pin, PD-2102 PI2DDR3212ZLE | |
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Contextual Info: This document was generated on 01/08/2014 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 78726-1004 Active DDR4 DIMM Sockets DDR4 DIMM Socket, Vertical Through-Hole, 30µm Gold Plating, 288 Circuits, PCB |
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PS-78726-001 AS-78726-001 PS-78726-001, RPS-78726-002 SD-78726-002 78726Series | |
TSE2004AV
Abstract: TSE2004B1 MCP98244 4-TSE2004B1
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MCP98244 MCP98244 4-TSE2004B1 4-TSE3000B1 EE6-3-5778-366 DS22327A-page TSE2004AV TSE2004B1 | |
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Contextual Info: CAT34TS04 Digital Output Temperature Sensor with On-board SPD EEPROM Description The CAT34TS04 is a combination Temperature Sensor TS and 4−Kb of Serial Presence Detect (SPD) EEPROM, which implements the JEDEC TSE2004av DDR4 specification and supports the Standard |
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CAT34TS04 CAT34TS04 TSE2004av CAT34TS04/D | |
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Contextual Info: MCP98244 DDR4 DIMM Temperature Sensor with EEPROM for SPD Features Description • Meets JEDEC Specification - MCP98244 -> JC42.4-TSE2004B1 Temperature Sensor with 4 Kbit Serial EEPROM for Serial Presence Detect SPD • 1MHz, 2-wire I2C Interface • Specified VDD Range: 1.7V to 3.6V |
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MCP98244 MCP98244 4-TSE2004B1 4-TSE3000B1 DS22327C-page | |
Ps3 MOTHERBOARD CIRCUIT diagramContextual Info: L6718 Digitally controlled dual PWM with embedded drivers for VR12 processors Datasheet - production data Applications • High-current VRM / VRD for desktop / server / new generation workstation CPUs VFQFPN56 -7x7 mm • DDR3 DDR4 memory supply for VR12 Description |
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L6718 VFQFPN56 DocID023399 Ps3 MOTHERBOARD CIRCUIT diagram | |
SAMSUNG ELECTRONICS ddr4Contextual Info: Rev. 0.5, Feb. 2014 K4A4G165WD Preliminary 4Gb D-die DDR4 SDRAM x16 only 96FBGA with Lead-Free & Halogen-Free RoHS compliant CAUTION : This document includes some items still under discussion in JEDEC. Therefore, those may be changed without pre-notice based on JEDEC progress. |
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K4A4G165WD 96FBGA SAMSUNG ELECTRONICS ddr4 | |
SC2597SETRCContextual Info: SC2597 Low Voltage DDR Termination Regulator POWER MANAGEMENT Features Description The SC2597 is designed to meet the latest JEDEC specification for low power DDR3 and DDR4, while also supporting DDR and DDR2. The SC2597 regulates up to + 3A for VTT and up to + 40mA for VREF. |
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SC2597 SC2597 SC2597SETRC | |
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Contextual Info: NCP51200, NCV51200 3 Amp VTT Termination Regulator DDR1, DDR2, DDR3, LPDDR3, DDR4 The NCP51200 is a source/sink Double Data Rate DDR termination regulator specifically designed for low input voltage and low−noise systems where space is a key consideration. |
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NCP51200, NCV51200 NCP51200 DFN10 NCP51200/D | |
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Contextual Info: CAB4A www.ti.com SNAS630B – JULY 2013 – REVISED OCTOBER 2013 CAB4A - DDR4 Register 32-Bit 1:2 Command/Address/Control Buffer and 1:4 Differential Clock Buffer Check for Samples: CAB4A FEATURES DESCRIPTION • • • • • • • • • • • • |
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SNAS630B 32-Bit DDR4RCD01 DDR4-2400 | |
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DDR4 DIMM SPD JEDEC
Abstract: SAMSUNG ELECTRONICS ddr4 SAMSUNG DDR4 k4a4g085wd
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K4A4G045WD K4A4G085WD 78FBGA DDR4 DIMM SPD JEDEC SAMSUNG ELECTRONICS ddr4 SAMSUNG DDR4 k4a4g085wd | |
k4A4G165
Abstract: K4A4G165WD-BCRC
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K4A4G165WD 96FBGA k4A4G165 K4A4G165WD-BCRC | |
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Contextual Info: CAB4A www.ti.com SNAS630A – JULY 2013 – REVISED AUGUST 2013 CAB4A - DDR4 Register 32-Bit 1:2 Command/Address/Control Buffer and 1:4 Differential Clock Buffer FEATURES DESCRIPTION • • • • • • • • • • • • • • • • The CAB4 is 32-bit 1:2 Command/Address/Control |
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SNAS630A 32-Bit DDR4RCD01 DDR4-2400 | |
JESD79-3DContextual Info: TM August 2013 • Introduction and Industry Trends • Memory Organization and Operation • Features and Capabilities • Demo − DDR configuration using QorIQ Configuration Suite − DDR validation using DDRv plug-in to QCS TM 2 TM • Many customers are deploying and expect DDR3 support on |
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EE1004Contextual Info: M34E04 4-Kbit Serial Presence Detect SPD EEPROM compatible with JEDEC EE1004 Datasheet - production data Features • 512-byte Serial Presence Detect EEPROM compatible with JEDEC EE1004 specification • Compatible with SMBus serial interface: – up to 1 MHz transfer rate |
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M34E04 EE1004 512-byte EE1004 128-byte DocID023348 | |
Micron TechnologyContextual Info: Micron DRAM Products Overview August 2013 John Quigley – Micron FAE 2012 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and |
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20Note/DRAM/TN4102 TN-41-04: TN-41-13: TN-46-02: TN-46-06: TN-46-11: TN-46-14: TN-47-19: TN-47-20: Micron Technology | |
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Contextual Info: M34E04 4-Kbit Serial Presence Detect SPD EEPROM for DRAM modules Datasheet − production data Features • Compatible with SMBus serial interface: – up to 1 MHz transfer rate ■ EEPROM memory array: – 4 Kbits organized as two pages of 256 bytes each |
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M34E04 128-byte | |
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Contextual Info: M34E04 4-Kbit Serial Presence Detect SPD EEPROM for DRAM modules Datasheet - production data Features • Compatible with SMBus serial interface: – up to 1 MHz transfer rate UFDFPN8 (MC) 2 x 3 mm • EEPROM memory array: – 4 Kbits organized as two pages of |
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M34E04 128-byte DocID023348 | |
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Contextual Info: M34E04 4-Kbit Serial Presence Detect SPD EEPROM for DRAM modules Datasheet − target specification Features • Compatible with SMBus serial interface: – up to 1 MHz transfer rate ■ EEPROM memory array: – 4 Kbits organized as two pages of 256 bytes each |
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M34E04 128-byte | |
STRL 352
Abstract: RD621 DDR4 NEC JAPAN d611 ddr2 ram pin
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DS07-13710-4E 16-bit F2MC-16LX MB90580C 583C/583CA/F583C/F583CA/587C/587CA/V580B STRL 352 RD621 DDR4 NEC JAPAN d611 ddr2 ram pin | |