RCA 014
Abstract: emitter "1060 nm" C30974E rca linear "photodiode " 011 photodiode Avalanche photodiode avalanche photodiode bias
Contextual Info: E G & G/CANADA/OPTOELEK IO 3D3ühlD DDDD157 737 • CANA ItCilE T - H - Î 7 Si Photodiode C30974E DATA SHEET Optics Rectangular Silicon Avalanche Photodiode Preamplifier Module ■ Responsivity at TA = 25°C 3.7 x 10s V/W at 900 ran — 1.8 x 10s V/W at 1060 mn
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3d30hl0c30974e12-leaded-0034/10/88+6rca 014emitter "1060 nmrca linearphotodiode " 011photodiode avalanche photodiodeavalanche photodiode bias
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s13001
Abstract: 11n120 IC 4011 pin DETAIL HA 4016 IC 4011 14 PIN 1N1202A 1N1204A 1N1206A 1N3671A 1N3673A
Contextual Info: NIL S P E C S I I I I GOO IC • 0 0 0 0 1 2 5 O O E T S T S The documentation and process conversion measures necessaryto comply with this revision shallbe completed by 2 January 1990_ I I I | 4 Ii n c h - p o u n d T MIL-S-19500/260D 21 April 1989 SUPERSEDING-MIL-S-19500/260C
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00001hs1n1202a1n1204a1n1206a+91n3671a1n3673amil-s-19500s13001935a486-111n120ic 4011 pin detailha 4016ic 4011 14 pin
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SQ3300
Abstract: SQ3300V SQ3300P
Contextual Info: Pletfonic/Jfic. 19013 36th Ave. West • Suite H • Lynnwood, WA 98036, USA SQ3300 THRU-HOLE OSCILLATORS IN METAL PACKAGE 8-PIN HALF SIZE WITH TRI-STATE OUTPUT STANDARD SPECIFICATIONS: Frequency Range Frequency Stability over Operating Temperature Range
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sq330060/404v390ohmin914+2sq3300vsq3300p
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Contextual Info: REVI S IO N D DSM-VT-X-XX-S-X-XX-XX TYPE-1 — VTi MDUNTING FftCE RJi Removable Jock JS-03 for use MJi Metric M3 Jack CJS-04 for use Vertical Through Hole SHELL S IZE/PDSITIDN -E-09 —A— 15 —B—25 —C—37 GENDER -Si - Socket
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-e-09--b--25--c--37js-03+6cjs-04dddd15tb-01-4bl-01-6tb-02-4bl-02-6
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quan-tech
Abstract: E34-E35 ANI 1015 awm 1015 wire E271 lb 122 s dvjq k514
Contextual Info: MIL SPECS k J 00DD1E5 □ □ U T S ? 3 ~T *79 " O b Mî 1_~ M- 3 Ti »51r. /1 3 r> 1H [incense1, 1987 s u p e r s e d in g HI L-M-38 510/13 5A 18 August 1986 MILITARY SPECI FI CATI ON MICROCIRCUITS, LI NEAR, LOW OFFSET OPERATIONAL AMP L I F I E RS MONOLITHIC SILI CON
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hil-m-38mil-m-38510mil-m-38510/135bquan-tech+7e34-e35ani 1015awm 1015 wiree271lb 122 sdvjqk514
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tq33
Contextual Info: High Output Drive cti u m o i o G v GS820H32Q/T 138/133/117/100/66,3.3V GS820H32Q/T Features • 2x Output drive of GS82032 • • • • • • • • • • 80-138MHz P/L 66MHz (FTi 64K x 32 Burst Single 3.3V + \ 0 %/- 5 % power supply High frequency operation: 138MHz
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gs820h32q/t80-138mhz66mhzgs82032+2138mhztq33
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1M823-1
Abstract: 1N827 DIODE 1N827 1N821-1 1N823 DIODE 1N825 1N829-1 1N825 1N827-1 1N821-1 JANTX
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 November 1994 MIL-S-19500/159H 16 Hav 1994 SUPERSEDING MIL-S-19500/159G 22 January 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE,
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mil-s-19500/159hmil-s-19500/159g1n8211n823+121n8251n8271n8291n821-11n823-11n825-11m823-1diode 1n827diode 1n8251n829-11n827-11n821-1 jantx
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