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    DDD411 Search Results

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    Mitsubishi Semiconductor America

    Abstract: M5F741
    Contextual Info: M IT S U B IS H I ELEK -CUNEAR} b2 6249826" M ITSUBISHI ÌT lE K LINEAR DDD411S 1 | 62C 04115 D J - 7 7 •// INDUSTRY STANDARD MITSUBISHI LINEAR ICs M5F741 SEMICONDUCTORS OPERATIONAL AMPLIFIER DESCRIPTION The M5F741 is a semiconductor integrated circuit consisting of a dif­


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    ddd411sm5f741mitsubishi semiconductor america PDF

    Contextual Info: November 1993 Edition 2.0 FUJITSU DATA SHEET M B 8 14260-60/-70/-80 CMOS 256K X 16 BIT FAST PAGE MODE DYNAMIC RAM CMOS 262,144 x 16 bit Fast Page Mode Dynamic RAM The Fujitsu MB814260 is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 memory cells accessible in 16-bit increments. The MB814260 features a "fast page’ mode of


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    mb81426016-bit512x16-bitsmb814260-60/-70/-80+4fpt-44p-m07f44016s-1cmb814260-60mb814260-70 PDF

    WD33C93

    Abstract: western digital scsi bus interface controller
    Contextual Info: WESTERN DIGITAL CORP 77 D e J T 7 1 Ö 2 S Ö 0D0411D 0 | 9718228 WESTERN DIGITÄL CORP WESTERN O R O 77C 0 4 1 1 0 D T'S2-3 3-ò 3 R DIGITAL A T I O N WD33C92 And WD33C93 SCSI-Bus Interface Controller DOCUMENT SCOPE This document describes both the WD33C92-SBIC and


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    0d0411dwd33c92wd33c93wd33c92-sbic+2wd33c93-sbicwestern digital scsi bus interface controller PDF

    Contextual Info: HY514100A Series »HYUNDAI 4M x 1 -bit CMOS DRAM DESCRIPTION The HY514100A is the 2nd generation and fast dynam ic RAM organized 4,194,304 x 1-bit. The HY514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    hy514100a1ac06-30-may95hy514100ajhy514100alj+2hy514100athy514100alt PDF

    Contextual Info: SC17720Y* * Series Voltage Detectors Technical Manual S-MOS Systems, Inc. October 1996 Version 1.0 Prelim inary S-MOS Systems, Inc. »150 River Oaks Pkwy •San Jose, CA 95134» Tel: (408) 922-0200 •Fax: (408) 922-0238 TTBETDT DOOMCHfl b34 TH IS P A G E INTENTIONALLY BLA N K


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    sc17720y00g4130gg4134g004135 PDF

    Contextual Info: SPT772S SPT 8-BIT, 300 MSPS FLASH AID CONVERTER SIGNAL PR OC ESSIN G TECHNOLOGIES FEATURES • • • • • APPLICATIONS M etastable Errors Reduced to 1 LSB Low Input Capacitance: 10 pF W ide Input Bandwidth: 210 MHz 300 MSPS Conversion Rate Typical Power Dissipation: 2.2 W atts


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    spt772sspt7725spt7725amqspt7725bmq+6spt7725amj/883spt7725bmj/883spt7725amq/883spt7725bmq/883spt7725bcumilitary/883 PDF

    Contextual Info: @ LG Semicon. Co. LTD. Description Features The GM71C16400B/BL is the new generation dynamic RAM organized 4,194,304 words x 4 Bit. GM71C16400B/BL has realized higher density, h ig h e r perfo rm an ce and vario u s functions by utilizing advanced CMOS process


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    gm71c16400b/blgm7ici6400b/bl300mil PDF

    2 bit magnitude comparator using 2 xor gates

    Abstract: CX20116 CXA1396D SPT7710
    Contextual Info: @ SPT SPT7710 sjgnal PROCESSING TECHNOLOGIES 8-BIT, 150 MSPS FLASH A/D CONVERTER FEATURES APPLICATIONS • • • • • • • • • • M etastable Errors Reduced to 1 LSB Low Input Capacitance: 10 pF W ide Input Bandwidth: 210 MHz 150 MSPS Conversion Rate


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    spt7710spt7710amqspt7710bmqpt771oamj/883+6military/883spt771obmj/883spt771oamq/8832 bit magnitude comparator using 2 xor gatescx20116cxa1396d PDF