DDD371 Search Results
DDD371 Datasheets Context Search
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Contextual Info: 51E D Ô13bb71 DDD371Ô M7T se MIKRDN SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Ptot Tj, Tslg Visol hum idity climate C onditions 1 • SEK G Values . 102 D 122 D 1000 I 1200 1000 1 1200 400/300 800/600 ±20 2500 - 5 5 . . .+150 |
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13bb71ddd371013bb71g037e5 | |
marking C5K
Abstract: 2SD1656 ic sj 2038 sj 2025 sj 2038 DDD3710
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2sd1656b1181b1252marking c5k+4 | |
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Contextual Info: P P a t e n t U N Doc #: 1570 e n d i n g L X 1 5 7 0 /1 5 7 1 M I C R O E L E C T R O N I C S T h e I n f i n i t e P o w e r I o f P hase M n n o v a t i o n o d u la t ed P A C S y n c h r o n o u s S e c o n d a r y - S id e C o n t r o l l e r r e l i m i n a r y |
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lx1570/71v/10vlx1571v/10a+2 | |
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Contextual Info: Q j Super high speed switching transistors Dovii.c typo V cbo Volts Volts VcEO sus Volli; 2SC3317 500 400 400 5 2SC3K65 500 400 400 5 2SC3318 500 400 400 2SC3320 500 400 2SC4/bO 500 400 2SC4831 500 Ë 1400 FT401 B VcEO le Pc cont. A m ps. W atts P • S u ita b le fo r 100kHz cla ss sw itc h in g regu la tors |
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2sc33172sc3k652sc33182sc3320+6 | |
JIS B1181
Abstract: TRANSISTOR MARKING YB IC-81 40-ohm 2SD1652 marking 222J CJCO
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2sd16520dds13tt-33-u1750b+8 | |
2SC930
Abstract: transistor 2sC930 sj 2025 for amplifiers b1181 VLN 2003a 2SC930 D TRANSISTOR b1181 JIS B1181 NF Amp NPN Silicon transistor TO-3 sj 2025
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2sc9307ch707lit-u-172sc930spa+11 | |
b1181
Abstract: sj 2025 2SA1210 JIS B1181 sj 2038 2SC2912
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2sa1210b1181b1252sj 2025+3 | |
6z3 capacitor
Abstract: r02f IC - 68332 MCU IFR modul 68332-16 68HC11 "pin compatible" 68000 thomson
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32-bitcpu32ts68332mrb/c16ts68332mfb/c16+11 | |
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Contextual Info: GM7 1 C4 1 0 0 B/BL G oldStar 4,194,304 WORDS x l BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4100B/BL is the new generation dy nam ic RAM organized 4 ,1 9 4 ,3 0 4 x 1 Bit. GM71C4100B/BL has realized higher density, higher performance and various functions by |
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gm71c4100b/blm02fi7s771c4100b/bl20soj+3 | |
CE 65 MContextual Info: B E N C H M A R Q _ b q 4 1 1 5 Y 512Kx8 NV Pseudo SRAM Features General Description >• Data retention in the absence of power The CMOS bq4115Y is a nonvolatile pseudo static RAM organized as 512K words by 8 bits. The integral |
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512kx8bq4115ybq4115512kx+2 | |
schematic diagram for ac power line voltage condi
Abstract: schematic diagram for power line ac voltage condi L600P transformer less power supply 6v output main transformer secondary 6V 200mA specification Three-terminal Off-line PWM Switch DDD3714 LX1570 LX1571 voltage regulator PWM 1995 transconductance sink
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lx1570/1571lx1570/71v/10a28awc+13 | |
skp30a
Abstract: osi 5k SKP18A skp40a
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5kp110a1000/usec5kp645kp64a+9 | |
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Contextual Info: □IXYS IXSH/IXSM 35N100A High speed IGBT VC ES I C 25 V C E sat = 1000 V = 70 A = 3.5 V Short Circuit SOA Capability Sym bol T est C onditions v CES T j = 25°C to 150°C 1000 V V CGR T0 = 25°C to 150°C; RGE = 1 Mi2 1000 V V GES C ontinuous +20 V V GEM |
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35n100a4bfib22t4bflb22b00d3712 | |
IB106
Abstract: K19 GR TRANSISTOR b1181 B1181 ic sj 2038 sj 2025 sj 2038 2SD1653 DDD3710 transistor 359 AJ
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2sd1653doqs14eb1181b1252+8 | |
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C1571 transistor
Abstract: transistor c1570 transistor c1571 c1570 2SC1571 2SC1571L b1252 TRANSISTOR ic sj 2038 sj 2025 sj 2038
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2sc15701571l2sc15712sc1571l+10 | |