DD 128 D TRANSISTOR Search Results

STP32N05L

Abstract: STP32N05LFI
Contextual Info: STP32N05L STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N05L STP32N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 50 V 50 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STP32N06L

Abstract: STP32N06LFI
Contextual Info: STP32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N06LFI • ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

S178A

Abstract: VIDEO PULSE GENERATOR
Contextual Info: S178A Video Pulse Generator DIP 28 The S 178 A is an MOS circuit using p-channel metal-gate-technology with enhancement and depletion transistors, featuring the following technical characteristics: The video pulse generator produces the sync, control, and erase signals required for the

STP32N06L

Abstract: STP32N06LFI
Contextual Info: STP32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N06LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STP32N05L

Abstract: STP32N05LFI
Contextual Info: STP32N05L STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N05L STP32N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STP32N05L

Abstract: STP32N05LFI
Contextual Info: STP32N05L STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N05L STP32N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

t750

Abstract: ds 300 u810
Contextual Info: an A M P com pany RF MOSFET Power Transistor, 75W, 24V 30 - 90 MHz FH2114 Features • • • • • • N-Channel Enhancem ent Mode Device Meets CECOM Drawing A3012711 D esigned for Frequency H opping Systems 30-90 MHz I.ower Capacitances for Broadband O peration

Contextual Info: SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 349 ^ D S on 100 V 32 A 0.06 n Maximum Ratings Parameter Continuous drain current, Tc = 27 "C Pulsed drain current, Tc = 25 "C Avalanche current, limited by 7]max

2SC9013

Abstract: 2sc9013 transistor UM66T 2SC901 UM66T Series UM66 um66 music generator
Contextual Info: UM66T Series Simple Melody Generator Features • ■ ■ ■ ■ ■ 64-note ROM m em ory ■ 1.3V to 3.3V operating voltage and low power consum ption ■ Dynamic speaker can be driven with an external NPN transistor OSC. resistor is built-in One-shot m ode o r level-hold m ode can be selected

BSL215C

Abstract: HLG09283 L6327
Contextual Info: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 150 140 mΩ V GS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)

MOTOROLA POWER TRANSISTOR lc 945

Abstract: zener ap 474 940 629 MOTOROLA 113
Contextual Info: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.

Contextual Info: BUZ 342 Infine on t*c h o ologie» SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated •d v /d / rated 1 VPT051SB 2 J • Ultra low on-resistance • 175"C operating temperature D G Type BUZ 342 h Vds 60 A 50 V f lDS on 0.01 n

Contextual Info: Communication ICs PCM codec 1C for digital cellular telephones BU8731KV The BU8731KV is a PCM codec IC developed for use with digital cellular telephones. It contains analog input / output features such as a 14-bit linear precision, |x / A-LAW codec, mic and speaker amplifiers, and switching transistor for the

Contextual Info: Product specification BSS215P OptiMOS P2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Super Logic Level (2.5V rated) -20 V V GS=-4.5 V 150 mΩ V GS=-2.5 V 280 ID -1.5 A • Avalanche rated PG-SOT23

Contextual Info: May 1996 F A IR C H IL D SEM IC ONDUCTO R tm NDP7060 / NDB7060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

Contextual Info: March 1996 N NDP7050 / NDB7050 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is

RETICON BBD

Abstract: combined video RETICON RL photodiode array EGG RETICON PtSi FPA RA0128NIU RH0128NIL-011 infrared FPA RETICON
Contextual Info: E G & G RETICON H7E n rG RETICON ¿'^EG ]> m 3030?3fl QQU3b?M M H IR E RA0128NIU 128 x 128 PtSi Focal Plane Array r - v / s s - w Introduction • High resolution: 128 x 128 elements High fill factor: 59% with a 60 jun x 60 jim pixel size Two horizontal readout registers for high speed imaging

K4175

Abstract: BC 148 TRANSISTOR PIN CONFIGURATION buk417-500ae transistor BC 147 sf 128 transistor BUK417-500B BUK417-500BE transistor bc 148 BC 148 transistor bc 147 B transistor
Contextual Info: PH ILIP S I NTE RN ATI ON AL bSE D H 7 1 1 0 6 2 b 00b3flfib T5^ « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in IS O T O P envelope. The device is intended for use in

BUZ24

Contextual Info: SIEMENS SIPMOS Power Transistor • • • BUZ 24 N channel Enhancem ent mode Avalanche-rated Type In s BUZ 24 100 V I 'd 32 A ^DS on P a c k a g e 1> Ordering Code 0.06 i i TO-204 AE C 67078-S 1003-A2 Maxim um Ratings Sym bol Parameter Continuous drain current, Tc = 27 "C

2SK790

Abstract: HSO16 2SK79 1SV35
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 T O S H IB A TT dF § T D T 725G O D l bTSS T J T O S H IB A D I S C R E T E /OPTO J T0SHIBA FIELD effect TRANSISTOR 2 S IC 7 9 0 99D 1 6 7 5 5 SEMICONDUCTOR SILICON N CHANNEL MOS TYPE C7T-MOSI T-3'?-13 TECHNICAL DATA •INDUSTRIAL APPLICATIONS

MSM10T0106

Abstract: MSM10T0055 MSM10T0209
Contextual Info: OKI_ January 1990 Preliminary Semiconductor_ _ _ _ _ _ _ _ _ _ _ _ _ MSM10T0000 1.0jim SEA-OF-GATES FAMILY GENERAL DESCRIPTION FEATURES Oki's MSM10T0000 Sea-of-Gates family is a performance enhanced, high-density product constructed from Oki's advanced 1.0|im drawn 0.85nm

Contextual Info: Tem ic e5530 S e m i c o n d u c t o r s 128 Bit IDIC for Radio Frequency Identification Description The e5530 is pan of a closed coupled identification system. It receives power from an RF transmitter which is coupled inductively to the IDIC®. The frequency is

TK5530H

Abstract: TK5550F
Contextual Info: Tem ic e5530 S e m i c o n d u c t o r s 128-Bit IDIC for Radio Frequency Identification Description The e5530 is part of a closed coupled identification system. It receives power from an RF transmitter which is coupled inductively to the IDIC . The frequency is

yd 803

Abstract: 1335F epson sed lcd SED1335F white 8 xi 8 DOT MATRIX DISPLAY controllers G121C G121C00P000 G121CB1P000 HD66205TF 1995 "LED backlight"
Contextual Info: AN.NO.G121C-0-562E LIQUID CRYSTAL DISPLAY MODULE G121C00P000 G121CB1P000 USER'S MANUAL Seiko Instruments Inc. NOTICE This manual describes the technical information, as well as the functions and operation of the G121C Liquid Crystal Display Module made by Seiko