DD 128 D TRANSISTOR Search Results

STP32N05L

Abstract: STP32N05LFI
Contextual Info: STP32N05L STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N05L STP32N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 50 V 50 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STP32N06L

Abstract: STP32N06LFI
Contextual Info: STP32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N06LFI • ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

S178A

Abstract: VIDEO PULSE GENERATOR
Contextual Info: S178A Video Pulse Generator DIP 28 The S 178 A is an MOS circuit using p-channel metal-gate-technology with enhancement and depletion transistors, featuring the following technical characteristics: The video pulse generator produces the sync, control, and erase signals required for the

STP32N06L

Abstract: STP32N06LFI
Contextual Info: STP32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N06LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STP32N05L

Abstract: STP32N05LFI
Contextual Info: STP32N05L STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N05L STP32N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STP32N05L

Abstract: STP32N05LFI
Contextual Info: STP32N05L STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N05L STP32N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

t750

Abstract: ds 300 u810
Contextual Info: an A M P com pany RF MOSFET Power Transistor, 75W, 24V 30 - 90 MHz FH2114 Features • • • • • • N-Channel Enhancem ent Mode Device Meets CECOM Drawing A3012711 D esigned for Frequency H opping Systems 30-90 MHz I.ower Capacitances for Broadband O peration

Contextual Info: SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 349 ^ D S on 100 V 32 A 0.06 n Maximum Ratings Parameter Continuous drain current, Tc = 27 "C Pulsed drain current, Tc = 25 "C Avalanche current, limited by 7]max

BSL215C

Contextual Info: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V VGS=±4.5 V 150 140 mW VGS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel VDS · Enhancement mode RDS on ,max · Super Logic level (2.5V rated) · Avalanche rated

2SC9013

Abstract: 2sc9013 transistor UM66T 2SC901 UM66T Series UM66 um66 music generator
Contextual Info: UM66T Series Simple Melody Generator Features • ■ ■ ■ ■ ■ 64-note ROM m em ory ■ 1.3V to 3.3V operating voltage and low power consum ption ■ Dynamic speaker can be driven with an external NPN transistor OSC. resistor is built-in One-shot m ode o r level-hold m ode can be selected

TE1509

Abstract: TE1055 30D8 DD 127 D TRANSISTOR te1157.1 TE1064 TE1068 TE1090 TE1105 TYPE TE
Contextual Info: Type TE Vishay Sprague Aluminum Capacitors LITTL-LYTIC Electrolytics FEATURES • Proven dependable performance in the industrial and electronic equipment with either transistor or modified electron-tube circuits • All terminal connections welded, eliminating possibility of

BSL215C

Abstract: HLG09283 L6327
Contextual Info: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 150 140 mΩ V GS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)

MOTOROLA POWER TRANSISTOR lc 945

Abstract: zener ap 474 940 629 MOTOROLA 113
Contextual Info: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.

Contextual Info: BUZ 342 Infine on t*c h o ologie» SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated •d v /d / rated 1 VPT051SB 2 J • Ultra low on-resistance • 175"C operating temperature D G Type BUZ 342 h Vds 60 A 50 V f lDS on 0.01 n

Contextual Info: Product specification BSS215P OptiMOS P2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Super Logic Level (2.5V rated) -20 V V GS=-4.5 V 150 mΩ V GS=-2.5 V 280 ID -1.5 A • Avalanche rated PG-SOT23

BUZ80AFI

Abstract: BUZ80AF BUZ80A k2800 Y125 dg45b
Contextual Info: 7 ^ 2 ^ 5 3 7 O O M SbBT G 7b • S 6TH BUZ80A BUZ80AFI SGS-THOMSON :^OT q MS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80A BUZ80AFI ■ . . ■ . ■ . V dss R dS(OII) Id 800 V 800 V < 3 Q < 3 Ü 3.8 A 2.4 A TYPICAL Ros(on) = 2.5 Q AVALANCHE RUGGED TECHNOLOGY

Contextual Info: May 1996 F A IR C H IL D SEM IC ONDUCTO R tm NDP7060 / NDB7060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

Contextual Info: March 1996 N NDP7050 / NDB7050 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is

RETICON BBD

Abstract: combined video RETICON RL photodiode array EGG RETICON PtSi FPA RA0128NIU RH0128NIL-011 infrared FPA RETICON
Contextual Info: E G & G RETICON H7E n rG RETICON ¿'^EG ]> m 3030?3fl QQU3b?M M H IR E RA0128NIU 128 x 128 PtSi Focal Plane Array r - v / s s - w Introduction • High resolution: 128 x 128 elements High fill factor: 59% with a 60 jun x 60 jim pixel size Two horizontal readout registers for high speed imaging

K4175

Abstract: BC 148 TRANSISTOR PIN CONFIGURATION buk417-500ae transistor BC 147 sf 128 transistor BUK417-500B BUK417-500BE transistor bc 148 BC 148 transistor bc 147 B transistor
Contextual Info: PH ILIP S I NTE RN ATI ON AL bSE D H 7 1 1 0 6 2 b 00b3flfib T5^ « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in IS O T O P envelope. The device is intended for use in

BUZ24

Contextual Info: SIEMENS SIPMOS Power Transistor • • • BUZ 24 N channel Enhancem ent mode Avalanche-rated Type In s BUZ 24 100 V I 'd 32 A ^DS on P a c k a g e 1> Ordering Code 0.06 i i TO-204 AE C 67078-S 1003-A2 Maxim um Ratings Sym bol Parameter Continuous drain current, Tc = 27 "C

2SK790

Abstract: HSO16 2SK79 1SV35
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 T O S H IB A TT dF § T D T 725G O D l bTSS T J T O S H IB A D I S C R E T E /OPTO J T0SHIBA FIELD effect TRANSISTOR 2 S IC 7 9 0 99D 1 6 7 5 5 SEMICONDUCTOR SILICON N CHANNEL MOS TYPE C7T-MOSI T-3'?-13 TECHNICAL DATA •INDUSTRIAL APPLICATIONS

MSM10T0106

Abstract: MSM10T0055 MSM10T0209
Contextual Info: OKI_ January 1990 Preliminary Semiconductor_ _ _ _ _ _ _ _ _ _ _ _ _ MSM10T0000 1.0jim SEA-OF-GATES FAMILY GENERAL DESCRIPTION FEATURES Oki's MSM10T0000 Sea-of-Gates family is a performance enhanced, high-density product constructed from Oki's advanced 1.0|im drawn 0.85nm

Contextual Info: Tem ic e5530 S e m i c o n d u c t o r s 128 Bit IDIC for Radio Frequency Identification Description The e5530 is pan of a closed coupled identification system. It receives power from an RF transmitter which is coupled inductively to the IDIC®. The frequency is