DC TO 18GHZ RF AMPLIFIER MMIC Search Results

NN12

Abstract: P35-4140-0 P35-4140-000-200 DC TO 18GHZ RF AMPLIFIER MMIC
Contextual Info: Data sheet MMIC Broadband Amplifier, 6- 18GHz Features • Broadband cascadable gain block • AGC control with gate bias The P35-4140-000-200 is a high performance monolithic broadband amplifier designed for use in a wide range of applications including telecommunications, instrumentation

DC TO 18GHZ RF AMPLIFIER MMIC

Abstract: 2Ghz agc amplifier NN12 P35-4150-000-200 MMIC Amplifier 18ghz
Contextual Info: Data sheet MMIC Broadband Amplifier, 2 - 18GHz Features • Broadband, cascadable gain block • AGC control with gate bias The P35-4150-000-200 is a high performance monolithic broadband amplifier designed for use in a wide range of applications including telecommunications, instrumentation

Contextual Info: SUF-1033 SUF-1033DC to 20GHz, Cascadable pHEMT MMIC Amplifier DC to 20GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3mmx3mm Product Description Features The SUF-1033 is a monolithically matched broadband high IP3 gain block covering DC to 20GHz. This pHEMT based amplifier uses a patented selfbias network that operates from a single 5V supply. It offers efficient cascadable performance in a compact 3mmx3mm Ceramic QFN package. It

Contextual Info: SUF-1033 SUF-1033DC to 20GHz, Cascadable pHEMT MMIC Amplifier DC to 20GHz, CASCADABLE pHEMT MMIC AMPLIFIER NOT FOR NEW DESIGNS Package: QFN, 16-Pin, 3mm x 3mm Product Description Features Gain and Return Loss versus Frequency VDD = 5V, RBIAS = 33Ƙ Optimum Technology

Contextual Info: SUF-1033 SUF-1033DC to 20GHz, Cascadable pHEMT MMIC Amplifier DC to 20GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3mm x 3mm Product Description Features The SUF-1033 is a monolithically matched broadband high IP3 gain block covering DC to 20GHz. This pHEMT based amplifier uses a patented selfbias network that operates from a single 5V supply. It offers efficient cascadable performance in a compact 3mm x 3mm Ceramic QFN package. It

Contextual Info: SUF-1033 SUF-1033DC to 20GHz, Cascadable pHEMT MMIC Amplifier DC to 20GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3mm x 3mm Product Description Features The SUF-1033 is a monolithically matched broadband high IP3 gain block covering DC to 20GHz. This pHEMT based amplifier uses a patented selfbias network that operates from a single 5V supply. It offers efficient cascadable performance in a compact 3mm x 3mm Ceramic QFN package. It

Contextual Info: SUF-1033 SUF-1033DC to 20GHz, Cascadable pHEMT MMIC Amplifier DC to 20GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3mm x 3mm Product Description Features The SUF-1033 is a monolithically matched broadband high IP3 gain block covering DC to 20GHz. This pHEMT based amplifier uses a patented selfbias network that operates from a single 5V supply. It offers efficient cascadable performance in a compact 3mm x 3mm Ceramic QFN package. It

Contextual Info: SUF-1033 SUF-1033DC to 20GHz, Cascadable pHEMT MMIC Amplifier DC to 20GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3mm x 3mm Product Description Features The SUF-1033 is a monolithically matched broadband high IP3 gain block covering DC to 20GHz. This pHEMT based amplifier uses a patented selfbias network that operates from a single 5V supply. It offers efficient cascadable performance in a compact 3mm x 3mm Ceramic QFN package. It

Ultrasonic Cleaner schematic

Abstract: P35-5104-000-301 84-1LMI NN12 P35-5104-000-200
Contextual Info: Data sheet HEMT MMIC Low Noise Amplifier, 2 - 20GHz Features • Cascode Configuration • 10 dB Gain Typical -200 10 dB Min (-301) • pHEMT technology • AGC control with gate bias The P35-5104-000-200 and P35-5104-000-301 are a high performance low noise 2 - 20GHz Gallium Arsenide

Contextual Info: TGA2620-SM 16 – 18GHz Driver Amplifier Applications • Commercial and Military Radar  Communications QFN 3x3 mm 14L Product Features         Functional Block Diagram Frequency Range: 16 – 18GHz PSAT: 18.5dBm P1dB: 16.5dBm Small Signal Gain: 20dB

Contextual Info: TGA2620 16 – 18GHz Driver Amplifier Applications • Commercial and military radar  Communications Product Features         Functional Block Diagram Frequency Range: 16 – 18GHz PSAT: 19dBm P1dB: 18dBm Small Signal Gain: 20dB

Contextual Info: P35-5104-000-200 Advance Product Information HEMT MMIC LOW NOISE AMPLIFIER, 2 - 20GHz Features • • • • • Cascode Configuration 10 dB Gain Typical 0.20 µm PHEMT technology AGC control with gate bias Less than 4.0 dB noise figure 2 - 18GHz Description

84-1LMI

Abstract: NN12 P35-5104-000-200 MARCONI power MARCONI amplifier
Contextual Info: P35-5104-000-200 HEMT MMIC LOW NOISE AMPLIFIER, 2 - 20GHz Features • • • • • • Cascode Configuration 10 dB Gain Typical pHEMT technology AGC control with gate bias Less than 4.0 dB noise figure 2 - 18GHz Description The P35-5104-000-200 is a high performance low noise 2 - 20GHz Gallium Arsenide monolithic travelling wave

DC TO 18GHZ RF AMPLIFIER MMIC

Abstract: MCL 25 NN12 P35-4150-0
Contextual Info: P35-4150-0 MONOLITHIC BROADBAND AMPLIFIER, 2 - 18GHz Features • • • • • • Broadband, cascadable gain block AGC control with gate bias Output power, 15dBm, typical Gain flatness ±0.5dB, typical On chip DC blocking capacitors at input and output

DC TO 18GHZ RF AMPLIFIER MMIC

Abstract: MAAPGM0053-DIE
Contextual Info: Amplifier, Distributed Power, 0.5 W 2.0-18.0 GHz MAAPGM0053-DIE 903217 — Preliminary Information Features ♦ ♦ ♦ ♦ 0.5 Watt Saturated Output Power Level Variable Drain Voltage 5-10V Operation MSAG Process Proven Manufacturability and Reliability

LI 803-4

Abstract: TGA8035-SCC
Contextual Info: TGA8035-SCC 6- TO 18-GHz AMPLIFIER A PP R O V AL 5026 13-dB Typical Gain 2.2:1 Typical Input/Output SWR 12.5-dBm Typical Output Power at 1-dB Gain Compression Typical Noise Figure Is 5 dB Size: 2,4892 x 2,0574 x 0,1143 mm 0.098 x 0.081 x 0.0045 in The Texas Instruments TGA8035-SCC is atwo-stage

Contextual Info: RMM2080 2-18 GHz Wideband Variable-Gain Driver Amplifier General Description Features The Fairchild Semiconductor’s RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ionimplanted, 0.5-µm gate MESFET devices fabricated on a

Contextual Info: RFUV1702 RFUV1702 17.7GHz TO 19.7GHz GaAs MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND 32 Features            1 GND 2 N/C GND 30 29 28 Q 27 N/C Vg1 26 25 24 VLPA12 23 N/C 90 RF Frequency: 17.7GHz to

FMM5805X

Contextual Info: FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31.0dBm Typ. High Gain: G1dB = 21.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5805X is a high-gain, high power, 3-stage MMIC

fujitsu power amplifier GHz

Abstract: FMM5805
Contextual Info: FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31.0dBm Typ. High Gain: G1dB = 21.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5805X is a high-gain, high power, 3-stage MMIC

GP 023 DIODE

Abstract: Three bond tga8300-scc
Contextual Info: TGA8300-SCC 2- TO 18-GHz AMPLIFIER A PP R O V AL 4356 • 20-dBm Typical Output Power at 1-dB Gain Compression • 7.5-dB Typical Gain • Input/Output SWR 1.5:1 • On-Chip Blocking Capacitor Allows Easy Cascading • Size: 2,362 x 1,625 x 0,152 mm 0.093 x 0.064 x 0.006 inch

Contextual Info: TGA8220-SCC DISTRIBUTED 2- TO 18-GHz AMPLIFIER A PP R O V AL 5026 • Positive Gain Slope • 26-dBm Typical Output Power at 1-dB Gain Compression • 6-dB Typical Gain • 1.6:1 Typical Input/Output SWR • Size: 3,327 x 1,880 x 0,152 mm 0.131 x 0.074x0.006 in

RFUV1702

Contextual Info: RFUV1702 RFUV1702 17.7GHz TO 19.7GHz GaAs MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND 32 Features            1 GND 2 N/C GND 30 29 28 Q 27 N/C Vg1 26 25 24 VLPA12 23 N/C 90 RF Frequency: 17.7GHz to

Contextual Info: FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31.0dBm Typ. High Gain: G1dB = 21.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5805X is a high-gain, high power, 3-stage MMIC