DB3X3 Search Results

DB2S31

Abstract: db3x
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3X316J Silicon epitaxial planar type For small current rectification • Features  Package  Short reverse recovery time trr  Low forward voltage VF  Contributes to miniaturization of sets, reduction of component count.

DB2J314

Abstract: DB3X314 DB2J31400L
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB2J314 Silicon epitaxial planar type For high speed switching circuits DB3X314K in SMini2 type package • Features  Package  Short reverse recovery time trr  Small reverse current IR

DB3J316

Contextual Info: DB3J316K Silicon epitaxial planar type Unit: mm For small current rectification DB3X316K in SMini3 type package • Features  Short reverse recovery time trr  Low forward voltage VF  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant

Contextual Info: DB3X313F Silicon epitaxial planar type For small current rectification Unit: mm • Features  Low forward voltage VF and small reverse current IR  Low terminal capacitance Ct  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant

DB3X315E

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3X315E Silicon epitaxial planar type For high speed switching circuits • Features  Package  Short reverse recovery time trr  Small reverse current IR  Contributes to miniaturization of sets, reduction of component count.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3X316K Silicon epitaxial planar type For small current rectification • Features  Package  Short reverse recovery time trr  Low forward voltage VF  Contributes to miniaturization of sets, reduction of component count.

Contextual Info: DB3X315E Silicon epitaxial planar type For high speed switching circuits Unit: mm • Features  Short reverse recovery time trr  Small reverse current IR  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: 5D

Contextual Info: Doc No. TT4-EA-12493 Revision. 2 Product Standards Schottky Barrier Diode DB3X317K0L DB3X317K0L Silicon epitaxial planar type Unit: mm 2.9 For high frequency rectification 0.4 0.16 3 • Features 1.5 2.8  Low forward voltage VF  Forward current Average IF(AV) = 1 A rectification is possible

Contextual Info: DB3X313N Silicon epitaxial planar type For small current rectification Unit: mm • Features  Low forward voltage VF and small reverse current IR  Low terminal capacitance Ct  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant

Contextual Info: DB3X316K Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DB3X316K Product type: Schottky Barrier Diode Parameters *DEVICE=DB3X316K,D * DB3X316K D model *$ .MODEL DB3X316K D + IS=477.23E-9 + N=1.0 + RS=1.6470 + IKF=1.9141 + CJO=8.4129E-12

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3X314F (Tentative) Silicon epitaxial planar type For high speed switching circuits • Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Maximum peak reverse voltage Single Forward current

DB2J314

Abstract: DB3X314J ZKH00342AED
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3X314J Silicon epitaxial planar type For high speed switching circuits • Features  Package  Short reverse recovery time trr  Small reverse current IR  Contributes to miniaturization of sets, reduction of component count.

DB3J316K

Abstract: DB3X316K ZKH00327AED DB3J316
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3J316K Silicon epitaxial planar type For small current rectification DB3X316K in SMini3 type package • Features  Package  Short reverse recovery time trr  Low forward voltage VF  Contributes to miniaturization of sets, reduction of component count.

DB3J316J

Abstract: DB2S316 DB3X316J ZKH00326AED
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3J316J Silicon epitaxial planar type For small current rectification DB3X316J in SMini3 type package • Features  Package  Short reverse recovery time trr  Low forward voltage VF  Contributes to miniaturization of sets, reduction of component count.

DB3X315E

Abstract: DB3J315E
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3J315E Silicon epitaxial planar type For high speed switching circuits DB3X315E in SMini3 type package • Features  Package  Short reverse recovery time trr  Small reverse current IR

db3x

Abstract: DB3X317K Company
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3X317K Silicon epitaxial planar type For high frequency rectification • Features  Package  Low forward voltage VF  Contributes to miniaturization of sets, reduction of component count.

DB3X314K

Abstract: db3x ZKH00343AED DB3X314
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3X314K Silicon epitaxial planar type For high speed switching circuits • Features  Package  Short reverse recovery time trr  Small reverse current IR  Contributes to miniaturization of sets, reduction of component count.

Contextual Info: DB3X316F Silicon epitaxial planar type For small current rectification Unit: mm • Features  Short reverse recovery time trr  Low forward voltage VF  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: 5K

Contextual Info: DB3X317K Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DB3X317K Product type: Schottky Barrier Diode Parameters *$ .MODEL DB3X317K D + IS=4.4280E-6 + N=1.0123 + IKF=998.99 + RS=0.14971 + ISR=425.08E-9 + NR=1.5000 + BV=40 + IBV=100.00E-6

Contextual Info: DB3J316N Silicon epitaxial planar type For small current rectification DB3X316N in SMini3 type package Unit: mm • Features  Short reverse recovery time trr  Low forward voltage VF  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant

Contextual Info: DB3J314J Silicon epitaxial planar type For high speed switching circuits DB3X314J in SMini3 type package Unit: mm • Features  Short reverse recovery time trr  Small reverse current IR  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant

Contextual Info: DB3J316J Silicon epitaxial planar type For small current rectification DB3X316J in SMini3 type package Unit: mm • Features  Short reverse recovery time trr  Low forward voltage VF  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant

Contextual Info: Doc No. TT4-EA-14659 Revision. 1 Product Standards Schottky Barrier Diode DB3Y313KEL DB3Y313KEL Silicon epitaxial planar type Unit : mm For small current rectification DB3X313K in NMini3 type package 2.9 0.4 0.13 • Features 3 1.4 2.4  Low forward voltage and small reverse leakage current

Contextual Info: DB3X313J Silicon epitaxial planar type For small current rectification Unit: mm • Features  Low forward voltage VF and small reverse current IR  Low terminal capacitance Ct  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant