DB3S Search Results

Contextual Info: DB3S308F Silicon epitaxial planar type For high speed switching circuits Unit: mm • Features  Short reverse recovery time trr  Low forward voltage VF  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: 4T

Contextual Info: Doc No. TT4-EA-12479 Revision. 2 Product Standards Schottky Barrier Diode DB3S406F0L DB3S406F0L Silicon epitaxial planar type Unit: mm For high speed switching circuits 1.6 0.26 „ Features 0.13 3 0.85 1.6 y Small reverse current IR y Short reverse recovery time trr

DB3S315E0L

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3S315E Silicon epitaxial planar type For high speed switching circuits DB3J315E in SSMini3 type package • Features  Package  Short reverse recovery time trr  Small reverse current IR

Contextual Info: BL GALAXY ELECTRICAL DB3S.DB4S SILICON BIDIRECTIONAL DIACS VOLTAGE RANGE: 28-45 V FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at

Contextual Info: DB3S TRIGGER DIODES FEATURES * VBO: 32V/34V/40V VERSIONS * Low Breakover Current DO213AA LL-34 DESCRIPTION * High reliability glass passivation insuring parameter stability and protection against junction contamination * JEDEC DO213AA case .059 (1.50) .055 (1.40)

DB3S406F

Abstract: ZKH00334AED
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3S406F Silicon epitaxial planar type For high speed switching circuits • Features  Package  Short reverse recovery time trr  Small reverse current IR  Contributes to miniaturization of sets, reduction of component count.

DB3S314K

Abstract: DB3J314K db3s314
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3S314K Silicon epitaxial planar type For high speed switching circuits DB3J314K in SSMini3 type package • Features  Package  Short reverse recovery time trr  Small reverse current IR

DB3S315E

Abstract: DB3J315E ZKH00333BED
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3S315E Silicon epitaxial planar type For high speed switching circuits DB3J315E in SSMini3 type package • Features  Package  Short reverse recovery time trr  Small reverse current IR

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB37315E Silicon epitaxial planar type For high speed switching circuits DB3S315E in SSSMini3 type package • Features  Package  Short reverse recovery time trr  Small reverse current IR

db3s314

Abstract: DB3S314F DB3J314 DB3J314F
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3S314F Silicon epitaxial planar type For high speed switching circuits DB3J314F in SSMini2 type package • Features  Package  Short reverse recovery time trr  Small reverse current IR

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3S406F Silicon epitaxial planar type For high speed switching circuits • Features  Package  Short reverse recovery time trr  Small reverse current IR  Contributes to miniaturization of sets, reduction of component count.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3S315E (Tentative) Silicon epitaxial planar type For high speed switching circuits • Packaging  Package Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  Code SSMini3-F3-B

DB3S314F

Abstract: DB2J314 ZKH00331AED
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3S314F Silicon epitaxial planar type For high speed switching circuits • Features  Package  Short reverse recovery time trr  Small reverse current IR  Contributes to miniaturization of sets, reduction of component count.

DB2J314

Abstract: DB3J314J DB3S314J ZKH00332AED DB3J314
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3S314J Silicon epitaxial planar type For high speed switching circuits DB3J314J in SSMini3 type package • Features  Package  Short reverse recovery time trr  Small reverse current IR

DB3S314K

Abstract: db3s314
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3S314K Silicon epitaxial planar type For high speed switching circuits DB3J314K in SSMini3 type package • Features  Package  Short reverse recovery time trr  Small reverse current IR

Contextual Info: DB3S315E Silicon epitaxial planar type Unit: mm For high speed switching circuits DB3J315E in SSMini3 type package • Features  Short reverse recovery time trr  Small reverse current IR  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant

Contextual Info: DB3S314K Silicon epitaxial planar type Unit: mm For high speed switching circuits DB3J314K in SSMini3 type package • Features  Short reverse recovery time trr  Small reverse current IR  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant

Contextual Info: DB3S314F Silicon epitaxial planar type For high speed switching circuits DB3J314F in SSMini3 type package Unit: mm • Features  Short reverse recovery time trr  Small reverse current IR  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant

DB3S308F

Abstract: DB2S308 ZKH00330AED
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3S308F Silicon epitaxial planar type For high speed switching circuits • Features  Package  Basic Part Number  Code SSMini3-F3-B  Pin Name 1: Anode-1 2: Cathode-2  Short reverse recovery time trr

c125t

Contextual Info: DB3S TRIGGER DIODES FEATURES * VBO: 32V/34V/40V VERSIONS * Low Breakover Current LL-34 DESCRIPTION High reliability glass passivation insuring parameter stability and protection against junction contamination .059 1.50 .055 (1.40) .020 (0.50) .014 (0.35)

Contextual Info: DB37315E Silicon epitaxial planar type Unit: mm For high speed switching circuits DB3S315E in SSSMini3 type package • Features  Short reverse recovery time trr  Small reverse current IR  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant

DB3S314

Contextual Info: DB3S314J Silicon epitaxial planar type For high speed switching circuits DB3J314J in SSMini3 type package Unit: mm • Features  Short reverse recovery time trr  Small reverse current IR  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant

db3s314

Abstract: DB3J314 db3s314j0l
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3S314J Silicon epitaxial planar type For high speed switching circuits DB3J314J in SSMini3 type package • Features  Package  Short reverse recovery time trr  Small reverse current IR

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3S314K (Tentative) Silicon epitaxial planar type For high speed switching circuits • Package  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit VR 30 V VRM 30 V IF 30 mA Peak forward current