DB3 22 Search Results

pin diagram of diac db3

Abstract: DB3 ST 40v diac DIAC DB3 specifications pin diagram of 40v diac db3 diac diode db3 st pin diagram of diac ST E DB3 db3 MARKING
Contextual Info: DB3 DB4 SMDB3 DIAC FEATURES • ■ VBO : 32V and 40V LOW BREAKOVER CURRENT DO-35 DB3 and DB4 DESCRIPTION Functioning as a trigger diode with a fixed voltage reference, the DB3/DB4 series can be used in conjunction with triacs for simplified gate control

DB3G

Contextual Info: SENSITRON SEMICONDUCTOR DB3-G DB4-G Technical Data Data Sheet 1281, Rev. - Green Products DB3-G Series Applications Green Products in Compliance with the RoHS Directive Gate-control circuits and power oscillator designs Maximum Ratings and Electrical Characteristics

diac DB3 application note

Abstract: DB3 application note DIAC DO35
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON DIAC BIDIRECTIONAL TRIGGER DIODES GLASS PASSIVATED PNPN DEVICE DB3, DB4 DO- 35 Glass Axial Package Functioning as a Trigger Diode with a Fixed Voltage Reference, DB3/DB4 can be

crystal 20Mhz

Abstract: R6R10 ECS hc-49us i/o expander TACT Switch with LED spst standard toggle switch Tact Switch led component 6 pin AAT4290 GRM188R71C104KA01D PIC12F675
Contextual Info: EV-112 AAT4290IJS-1-DB3 EVAL I/O Expander Switch with Serial Control Introduction The AAT4290IJS-1-DB3 EVAL board demonstrates the AAT4290 SmartSwitch , which has five P-channel MOSFETs and is configured for use as a microprocessor I/O expander application. Having independent drain

sgs-thomson diodes db3

Abstract: DC34
Contextual Info: DB3 /DB4 / DC34  TRIGGER DIODES FEATURES VBO : 32V / 34V / 40V VERSIONS LOW BREAKOVER CURRENT DESCRIPTION DO 35 Glass High reliability glass passivation insuring parameter stability and protection against junction contamination. ABSOLUTE RATINGS (limiting values)

Contextual Info: RECTRON DB3 SEMICONDUCTOR TECHNICAL SPECIFICATION TRIGGER DIODES FEATURES * VBO: 32V/34V/40V VERSIONS * Low Breakover Current DO-35 DESCRIPTION .022 0.56 DIA. .018 (0.46) High reliability glass passivation insuring parameter stability and protection against junction contamination

Contextual Info: DB3DB4、DB6 Bi-directional trigger diodes 0.5Watt Peak Power VOLTAGE - 28 TO 70 Volts 1. ProductCharacteristic * We declare that the material of product compliance with ROHS requirements Symbol Parameter VBO Breakdown Voltage +VBO - -VBO Breakover Voltage Symmetry

Contextual Info: DB3 BIDIRECTIONAL TRIGGER DIODE Reverse Voltage - 32 Volts Power: 150mW FEATURES DO-35 GLASS Small glass structure ensures high reliability VBO:26-36V version Low breakover current High temperature soldering guaranteed 250 C/10 seconds,0.375”(9.5mm) lead length,

Contextual Info: SODDB3/SODDB3T Taiwan Semiconductor Small Signal Product SOD-123 Trigger Diode DIAC FEATURES - Surface Mount Device SOD-123 packaged - VBO=32V DB3 - Max. PD=400mW MECHANICAL DATA - Case: Plastic gull wing SOD-123 package - High temperature soldering guaranteed: 260°C/10s

diac db3

Abstract: Diac DB 3 DIAC EQUIVALENT circuit DIAC 5 VOLT DIAC
Contextual Info: SENSITRON DB-3 DB-4 DB-6 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1280, REV. - DB-3 Series DIAC (PRELIMINARY) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS PARAMETERS SYMBOL DB3 Breakover Voltage +VBO, -VBO 28 32 36 Breakover Voltage |(+VBO)-(-VBO)| 3 Symmetry

db3 diac

Abstract: DB6 diac diode db6 diac db3 universal MOTOR speed control DIAc DB4 db3 Ib DB-3 DIAC EQUIVALENT circuit DC34
Contextual Info: DB3/DC34/DB4/DB6 SILICON BIDIRECTIONAL DIAC FEATURES The three layer,two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current,The breakover

Contextual Info: DB3-DB3TG 350mW Bi-directional Trigger Diodes Features • • • • • • • • • • VBO : 32V Version Low break-over current DO-35 package JEDEC Hermetically sealed glass Compression bonded construction All external surfaces are corrosion resistant and

db3 c

Abstract: DB3 application note db3 Ib marking DB3 db3tg marking VB DIODE
Contextual Info: DB3-DB3TG 150mW Bi-directional Trigger Diode Small Signal Diode DO-35 Axial Lead HERMETICALLY SEALED GLASS D Features —Designed for through-Hole Device Type Mounting. C A —Hermetically Sealed Glass. —All external suface are corrosion resistant and terminals are readily solderable.

1kHz-100kHz

Abstract: 7846RP DB10
Contextual Info: SPACE ELECTRONICS INC. 16-BIT DIGITAL TO ANALOG CONVERTER SPACE PRODUCTS DB2 1 28 7846RP DB3 DB1 DB4 DB0 DB5 VDD LDAC VOUT CLR RIN CE SEi 7846RP VREF+ VREF- VCC DGND DB15 DB6 DB14 DB7 DB13 DB8 DB12 DB9 R A2 + 16 Segment Switch Matrix 15 RIN 5 VOUT 23 CS 22

A-405

Contextual Info: DB3 BIDIRECTIONAL TRIGGER DIODE Reverse Voltage - 32 Volts DO-41 0.107 2.7 0.080 (2.0) DIA. FEATURES A-405 1.0 (25.4) MIN. Power: 150mW The plastic package VBO:28-36V version Low breakover current High temperature soldering guaranteed 250 C/10 seconds,0.375”(9.5mm) lead length,

DIODE T25 4 bo

Abstract: DIACS DC34 Bidirectional Diode Thyristors DIODE T25-4-bo
Contextual Info: R DB3/DC34/DB4/DB6 SILICON BIDIRECTIONAL DIAC SEMICONDUCTOR DO-35 GLASS FEATURES The three layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover 1.083(27.5) MIN current at breakover voltage as they withstand peak pulse current, The breakover

SIDAC K1V 32

Abstract: ax06 sidac violet k1v diode DO41 package k1v8 K1V11 db3 diac SIDAC k1v5 A405
Contextual Info: SEMICONDUCTORS DIODES, Trigger DIAC DO41 DO41 mod DO35 min. nom. 28 32 Breakover Voltage Symmetry Breakover Current dV between 0 and 10mA dV max. V IBO max. (µA) min. (V) DB3 ±3 100 5 DB3A ±3 100 5 DO41 DB3AS ±3 100 5 DO41 mod / A405 Device No. & Order Code

768RP

Abstract: DB10
Contextual Info: PRELIMINARY SPACE ELECTRONICS INC. 16-BIT 30 MSPS D/A CONVERTER SPACE PRODUCTS 768RP VDD DCOM IOUTA 1 28 LADCOM NR 2 27 IOUTB REFOUT 3 26 VEE NC 4 25 VDD REFCOM 5 24 DB15 IREFIN 6 23 DB14 DB0 7 22 DB13 DB1 8 21 DB12 DB2 9 20 DB11 DB3 10 19 DB10 DB4 11 18 DB9

Contextual Info: MN6557AS 1/2 IL00 * C-MOS 10-BIT D/A CONVERTER FOR IMAGE PROCESSING —TOP VIEW— 1 D VDD (+4.5 to +5.5V) 12 22 CK 13 14 2 A VDD 21 DB1 16 (+4.5 to +5.5V) 3 15 20 DB2 17 18 IREF 4 19 DB3 19 20 VREF 5 18 DB4 21 COMP 6 17 DB5 22 VIB 7 7 16 DB6 5

192128-A

Contextual Info: PG 192128-A OUTLINE DIMENSION & BLOCK DIAGRAM 4.0 13.5 4-PAD 7.0 4- 3.2 DB0~DB3 H1 8.7 98.0 0.5 92.5 77.5 4.25 6.0 M,CL1 CL2 M,CL1 FLM Vdd Vss 43.0 71.0 68.6 A 86.0 0.5 192 x 128 Dots K 54.0 FGND 47.32 78.0 15.0 1.5 VLC Vss E Segment driver 2 E Segment driver 1

22 pin lcd 240128

Abstract: p10 LED display Display 240128 SW60 R1C10 7475 BLOCK DIAGRAM LCm 320240 lcd 240128 DATA SW01 P10 led module
Contextual Info: PG 320240-C OUTLINE DIMENSION & BLOCK DIAGRAM 76.0 143.0 0.5 126.0 105.0 95.97 8.5 H1 H2 15.0 48.4 74.75 88.0 94.8 20.0 5.6 BL2 71.97 80.0 1 14 BL1 96.8 0.5 42.8 4- 0.3.4 320 x 240 Dots 135.0 150.5 D-OFF DB0~DB3 M,CL1,CL2 Vdd Vo Vee Vss 4.0 1.2 4 SEG. DRIVER x 4

s21 diode

Contextual Info: kmssj l.j nk }rxn- ~{pwr* pun}np*r}v~*vp~ =[RXU\a aU[^U_Qab_U < /62 KQaUT c]ZaQVU< 472O=? a] 92 KQaUT Sb_U\a < 9= ,^U_ ^]ZU- @XUZUSa_XS `a_U\VaW [X\0 < 4222O=? ,RUadUU\ X\^ba + ]ba^ba- LaUUZ _UaQX\U_ af^U< 3:BB/D3 =^^ZXSQRZU _UZQf af^U< DB3:BB ,6 ^]ZU`- BXZU G]0<A475592

13 pin lcd display

Contextual Info: PG 192128-A OUTLINE DIMENSION & BLOCK DIAGRAM 4.0 13.5 4-PAD 7.0 4- 3.2 DB0~DB3 H1 8.7 98.0 0.5 92.5 77.5 4.25 6.0 M,CL1 CL2 M,CL1 FLM Vdd Vss 43.0 71.0 68.6 A 86.0 0.5 192 x 128 Dots K 54.0 FGND 47.32 78.0 15.0 1.5 VLC Vss E Segment driver 2 E Segment driver 1

4-bit flash adc

Abstract: 7820RP
Contextual Info: PRELIMINARY SPACE ELECTRONICS INC. MICROPROCESSOR-COMPATIBLE 8-BIT ADC SPACE PRODUCTS 7820RP VDD 20 18 OFL 1 VIN VDD 20 2 DB0 NC 19 3 DB1 OFL 18 4 DB2 DB7 17 5 DB3 DB6 16 6 SEi WR/RDY 7820RP 7 MODE DB4 14 8 RD CS 13 9 INT VREF + 12 4-BIT FLASH ADC (4MSB)