DB223 Search Results

DB2132000L

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB21320 Silicon epitaxial planar type For rectification DB22320 in SMini2 type package • Features  Package  Low forward voltage VF and small reverse current IR  Contributes to miniaturization of sets, reduction of component count.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB22320 (Tentative) Silicon epitaxial planar type For rectification • Packaging  Package Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  Code Mini2-F4-B  Pin Name

DB22320

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB22320 Silicon epitaxial planar type For rectification • Features  Package  Low forward voltage VF and small reverse current IR  Contributes to miniaturization of sets, reduction of component count.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB21320 Silicon epitaxial planar type For rectification DB22320 in SMini2 type package • Features  Package  Low forward voltage VF and small reverse current IR  Contributes to miniaturization of sets, reduction of component count.

Contextual Info: Doc No. TT4-EA-12890 Revision. 3 Product Standards Schottky Barrier Diode DB2230400L DB2230400L Silicon epitaxial planar type Unit: mm 1.6 For rectification 0.13 2 • Features 2.6 3.5  Low forward voltage VF  Small reverse leakage current  Halogen-free / RoHS compliant

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB22306 Silicon epitaxial planar type For rectification • Features  Package  Low forward voltage VF  Contributes to miniaturization of sets, reduction of component count.  Eco-friendly Halogen-free package

00E-6

Abstract: DB22320
Contextual Info: DB22320 Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DB22320 Product type: Schottky Barrier Diode Parameters *$ *DEVICE=DB22320,D * DB22320 D model .MODEL DB22320 D + IS=11.7028E-6 + N=1.04 + RS=44.296E-3 + IKF=1.05307 + CJO=299.90E-12

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB22306 Silicon epitaxial planar type For rectification • Features  Package  Low forward voltage VF  Contributes to miniaturization of sets, reduction of component count.  Eco-friendly Halogen-free package

Contextual Info: Doc No. TT4-EA-12656 Revision. 3 Product Standards Schottky Barrier Diode DB2232000L DB2232000L Silicon epitaxial planar type Unit: mm 1.6 For rectification 0.13 2 • Features 2.6 3.5  Low forward voltage VF  Small reverse leakage current  Halogen-free / RoHS compliant

Contextual Info: Doc No. TT4-EA-12719 Revision. 3 Product Standards Schottky Barrier Diode DB2230600L DB2230600L Silicon epitaxial planar type Unit: mm 1.6 For rectification 0.13 2 • Features 2.6 3.5  Low forward voltage VF  Forward current Average IF(AV) = 2 A rectification is possible

DB22304

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB22304 Silicon epitaxial planar type For rectification • Features  Package  Small reverse current IR  Forward current (Average) IF(AV) = 1 A rectification is possible  Contributes to miniaturization of sets, reduction of component count.

32e7

Contextual Info: DB22304 Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DB22304 Product type: Schottky Barrier Diode Parameters *$ * DB22304 D model .MODEL DB22304 D + IS=7.518E-7 + N=1.0 + RS=20.461E-3 + IKF=0.65380 + CJO=424.60E-12 + M=0.64 + VJ=0.50

DB21320

Abstract: DB22320
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB21320 Silicon epitaxial planar type For rectification DB22320 in SMini2 type package • Features  Package  Low forward voltage VF and small reverse current IR  Contributes to miniaturization of sets, reduction of component count.

Contextual Info: DB22304 Silicon epitaxial planar type Unit: mm For rectification • Features  Small reverse current IR  Low forward voltage VF  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: B4  Packaging DB2230400L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: PRELIMINARY DATASHEET 400mW SOD-123 SURFACE MOUNT Very Small Outline Flat Lead Plastic Package Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range TJ Operating Junction Temperature

AN9321

Abstract: S 170 MOSFET TRANSISTOR transistor rfp50n06 relay 24v 30a rfp50n06 substitute RFP70N06 harris mosfet catalog DIODE DATABOOK RFP22N10 RFP3055
Contextual Info: Harris Semiconductor No. AN9512 Harris Power MOSFETs September 1995 Practical Aspects of Using PowerMOS Transistors to Drive Inductive Loads Authors: Stan Benczkowski and Wallace Williams Introduction Many of the more recent applications of PowerMOS transistors, particularly low voltage devices, have been as solenoid

AN9321

Abstract: RFP50N06 AN-7517 RFP22N10 RFP3055 RFP45N06 RFP70N06 ierc heatsink
Contextual Info: Practical Aspects of Using PowerMOS Transistors to Drive Inductive Loads Application Note Introduction Title N95 bt actipect f ng werOS antors ve uce ads utho eyrds ter- Many of the more recent applications of PowerMOS transistors, particularly low voltage devices, have been as solenoid

DB223

Contextual Info: SEMICONDUCTOR 400mW SOD-123 SURFACE MOUNT Very Small Outline Flat Lead Plastic Package Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range TJ Operating Junction Temperature

mosfet SOA testing

Abstract: AN9409 RFP70N06 RFD3055 mosfet transistor checking and testing 407 transistor
Contextual Info: Safe Operating Area Testing Without A Heat Sink Application Note Introduction Most manufacturers of PowerMOS transistors specify the Safe Operating Area for their devices at 25oC case temperature and derate them linearly to zero at the maximum rated junction temperature. The circuits to maintain a fixed current

Horizontal Transistor TT 2246

Abstract: ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601
Contextual Info: New High Speed Linear Products VIDEO OP AMPS AND BUFFERS HFA1105 LOW POWER VIDEO OP AMP HFA1115 I LOW POWER PROGRAMMABLE GAIN VIDEO BUFFER [ AnswerFAX DOCUMENT # 3395 AnswerFAX DOCUMENT * 3606 • -3dB Bandwidth Ay * + 2 . 350MHz

chrysler ccd bus

Abstract: bq 8055 MARKING CODE SMD JW CDP68EM05C4 6818A chrysler sci diagnostic port 5v rx tx RCA CDP 18 U 42 cd HARRIS HIP 4080 Motorola transistor smd marking codes 6805E2
Contextual Info: CDP68 CMOS MICROCONTROLLERS & PERIPHERALS 1995 ¿ • m j* . j m - - - r •■ .-*■ . ii- « HARRIS S E M 1C O N D U C T O R CEI H A R R I S U U S E M I C O N D U C T O R HARRIS SEMICONDUCTOR In December 1988, Harris Semiconductor acquired the General Electric Solid

MN864779

Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
Contextual Info: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.

Contextual Info: NXP low VF MEGA Schottky rectifiers in SOD123W and SOD128 FlatPower Schottky rectifiers : Small on size. Big on power. NXP’s new FlatPower packages with clip-bond technology meet the demand for thinner products with high power capabilities. Today a range of 40 medium power Schottky