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    Carling Technologies

    Carling Technologies VDB1980B-AEC00-000 (RCV-00014261 | VDB1980B-AEC00-000 | VDB1980BAEC00000)

    ROCKER SWITCH;SEALED;CONTURA;V-SERIES
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    RS VDB1980B-AEC00-000 (RCV-00014261 | VDB1980B-AEC00-000 | VDB1980BAEC00000) Bulk 8 Weeks 100
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    Carling Technologies VDB1980B-AEC00-000

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    Sager VDB1980B-AEC00-000 1
    • 1 $15.77
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    • 1000 $8.54
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    Master Electronics VDB1980B-AEC00-000
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    DB198 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    fast recovery diode 600v 5A

    Abstract: TFF5N60 DB-198 0421L
    Contextual Info: TAK CHEONG N-Channel Power MOSFET 4.5A, 600V, 2.4Ω 1 = Gate 2 = Drain 3 = Source 1 General Description 2 The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced


    Original     		o-220fpdb-100fast recovery diode 600v 5atff5n60+2db-1980421l PDF

    ba3414

    Abstract: BD 804
    Contextual Info: 1 1234455674 8 31998ABC81BD9E87FADDE8 8 8 183E1E7A8E9DDB11 1 1 1 1 187673E8BAD1E1 CD31 EF88BB81 1 1 1 31 341 1 1 3!3 341  D3%31 D!D1 !1  1 1 ! 1 $)31 $3&331


    Original     		31998abc81bd9e87f183e1e673e8b145/2a+7db198d3143789a289a2ea1811aba3414bd 804 PDF

    Contextual Info: TAK CHEONG N-Channel Power MOSFET 4.5A, 600V, 2.4Ω General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state


    Original     		o-220fpdb-100 PDF