DATECODE G1 Search Results

PCN0903

Abstract: Hitachi Datecode SUMITOMO G700 Nitto GE100LFCS GE100LFCS Hitachi FH920 Ablestik 2025D ablestik 2288a EPC16UI88AA sumitomo g700 type
Contextual Info: Revision: 1.0.1 PROCESS CHANGE NOTIFICATION PCN0903 ALTERNATIVE ASSEMBLY SITE FOR THE EPC CONFIGURATION FAMILY Change Description Altera is introducing Amkor, Philippines ATP and Amkor, Korea (ATK) as additional assembly sources for the EPC configuration devices. The EPC devices are currently assembled out of

Contextual Info: B H W IRING DIAGRAM 4X-4X Plug 1 Pin Number G1-G9 G1-G9 S1 S16 S2 S15 S3 S14 S4 S13 S5 S12 S6 S11 S7 S8 S9 B Plug 2 Pin Number 30 Lable S10 S9 S8 S10 S7 S11 S6 S12 S5 S13 S4 S14 S3 S15 S2 S16 S1 Shell Shell A ll B e s t E le c tro n ic s C o . Ltd. P /N : R -C S -F 4 X 4 F 4 X 4 -R 1 -1 0 0 0

connector bosch

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - 2 - LOC ALL RIGHTS RESERVED. REVISIONS DIST H LTR DESCRIPTION DATE DWN APVD F EH C O - 019 5 - 0 4 13MAY04 DvdE BM G G1 EC1 0 - 0 6 8 0 - 0 5 30M A Y 05

DEC2007

Abstract: TI ASSEMBLY CODE
Contextual Info: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , - LOC RESERVED. REVISIO N S H C O R P O R A T IO N . A S E CT IO N D IS T D E S C R IP T IO N G1 -49,9-

LTC-561JG-J

Abstract: LTC-561JG Liteon 401 2600C T0505
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only LED DISPLAY LTC-561JG-J DATA SHEET Rev Description By 01 ORIGINAL Refer to contour drawing Revision (- PRAPHAN (Above data for PD and Customer tracking only) - SPEC. NO.: DATE NPPR Received and Upload on OPNC

hx8340

Abstract: DEM240320A CIE1931 vc001 30 pin LCD connector 30MIN HX8345-A
Contextual Info: DEM 240320A TMH-PW-N Product Specification DISPLAY Elektronik GmbH CONTENTS 1,8” TFT MODULE DEM 128160B TMH-PW-N Product Specification Version: 1.0 31.10.2007 VERSION: 1.0 PAGE: 1 DEM 240320A TMH-PW-N Product Specification REVISION HISTORY: Revision Date

SLG55221

Abstract: fet n-channel pin configuration FET marking code
Contextual Info: 2 Rail GreenFETTM High Voltage Gate Driver Features Pin Configuration 5V Power supply • Drain Voltage Range 1.0V to 20V • • VCC • Controlled Turn on Slew Rate • TDFN-8 Package 2 4 3 8 7 6 5 PG G1/G2 S/DIS1 D 8-pin TDFN Top View Environmental Application Functions

SLG55221

Abstract: FET MARKING 600 V logic level fet fet MARKING g2 fet n-channel pin configuration
Contextual Info: 2 Rail GreenFETTM High Voltage Gate Driver Features Pin Configuration 5V Power supply • Drain Voltage Range 1.0V to 20V • • VCC • Controlled Turn on Slew Rate • TDFN-8 Package 2 4 3 8 7 6 5 PG G1/G2 S/DIS1 D 8-pin TDFN Top View Environmental Application Functions

Contextual Info: qggngng SR302 - SR320 3.0 AMPS. Schottky Barrier Rectifiers pi RoHS \_y COMPLIANCE DO-201 AD - -m -Features_ > 4" -i-v> <i- •i1 Low power loss, high efficiency. High current capability, Low VF.

Contextual Info: s TAIWAN SEMICONDUCTOR S1AL -S 1 M L RoHS 1.0 AMP. Surface Mount Rectifiers COMPLIANCE Sub SMA - CaUioOaBard i\- Features •4* ❖ -v* ^ •v" For surface m ounted application Glass passivated ju nctio n chip. Low -Profile Package Ideal fo r autom ated placem ent

802G

Abstract: SF801G SF808G
Contextual Info: is TAIWAN SEMICONDUCTOR RoHS COMPLIANCE SF801G - SF808G 8.0 AMPS. Glass Passivated Super Fast Rectifiers TO-22QAB .186 4.76 .172(442) .156(4.0) ' .138(3.54) v Features •fr •> -v- A UL Recognized File # E-326243 High efficiency, low VF High current capability

GPA1601

Abstract: GPA1607 QPCN9001 2609B TAIWAN SEMICONDUCTOR
Contextual Info: E TAIWAN SEMICONDUCTOR GPA1601 -GPA1607 RoHS 16.0 AMPs. G lass Passivated Rectifiers TO-22QAC CO M PLIAN C E .412Î1Û.S Mt Features <• 1«{? &?■> Glass Passivated chip junction o High efficiency, Low VF <■ High Current capacity o High reliability <■

Contextual Info: StrongIRFET IRFS7762PbF IRFSL7762PbF HEXFET Power MOSFET Application • Brushed motor drive applications  BLDC motor drive applications  Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications

SFAF801G

Abstract: SFAF808G
Contextual Info: is SFAF801G - SFAF808G TAIWAN SEMICONDUCTOR Isolated 8.0 AMPS. Glass Passivated Super Fast Rectifiers ITO-22QAC .374 9.6 ,134(3,4)DIA 113(3.0)DIA. .121(3.1) .098(2.5) P-'T* Features ♦ <• -Y- -4<■ -v> -0-0- - % UL R ecognized File # E -326243 High efficiency, low VF

IRFB7730PBF

Abstract: IRFB7730 irfsl7730 IRFS7730
Contextual Info: StrongIRFET IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET Power MOSFET Application  Brushed motor drive applications  BLDC motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications

Contextual Info: BUZ71A N - CHANNEL 50V - 0.1Î2 - 13A -TO-220 STripFET POWER MOSFET TYPE BUZ71 A V R D S o n Id < 0.12 Q. 13 A dss 50 V . • TYPICAL RDS(on) =0.1 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . HIGH CURRENT CAPABILITY . 175°C OPERATING TEMPERATURE

buz10

Contextual Info: BUZ10 N - CHANNEL 50V - 0.06ft - 23A -TO-220 STripFET POWER MOSFET TYP E BUZ10 • . . . . V R d S o ii Id < 0.07 Q. 23 A dss 50 V TYPICAL RDS(on) = 0.06 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175°C OPERATING TEMPERATURE

BUZ11

Abstract: buz11 equivalent BUZ11 in electronic pulse schematic buz11 motor control
Contextual Info: BUZ11 N - CHANNEL 50V - 0.03Ω - 33A TO-220 STripFET MOSFET TYPE BUZ11 • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.04 Ω 33 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE

D0214AC SMA

Abstract: D0214AC J-STD-0200 FY DO-214AC Sma marking CODE 63 D0214 datecode G1 marking g10 marking SK ml marking
Contextual Info: SI <s> SK32A - SK315A TAIWAN SEMICONDUCTOR 3.0 A M P S . S u rfa c e M o u n t S c h o ttk y B a rrie r R e c tifie rs RoHS COMPLIANCE Features <>• ♦ S M A /D O -214A C Low pow er loss, high efficiency. M etal to silicon rectifier, m ajority carrier conduction

BUZ71A

Abstract: transistor buz71a STripFET
Contextual Info: BUZ71A  N - CHANNEL 50V - 0.1Ω - 13A -TO-220 STripFET POWER MOSFET T YPE BUZ71A • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.12 Ω 13 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE

BUZ10

Contextual Info: BUZ10 N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET MOSFET TYPE BUZ10 • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.07 Ω 23 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE

BUZ71

Abstract: BUZ71 dc to ac
Contextual Info: BUZ71 N - CHANNEL 50V - 0.085Ω - 17A TO-220 STripFET POWER MOSFET TYPE BUZ71 • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.1 Ω 17 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE

BUZ11A

Abstract: buz11a circuit datecode G1
Contextual Info: BUZ11A N - CHANNEL 50V - 0.045Ω - 26A TO-220 STripFET MOSFET TYPE BUZ11A • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 26 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE

BUZ71

Abstract: stmicroelectronics datecode BUZ71 ST
Contextual Info: BUZ71  N - CHANNEL 50V - 0.085Ω - 14A -TO-220 STripFET POWER MOSFET T YPE BUZ71 • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.1 Ω 14 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE