DATE SHEET OF BA FINAL Search Results

Contextual Info: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm • Operating Voltage

Contextual Info: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm • Operating Voltage

Contextual Info: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 130 balls FBGA Area: 8x9 mm; Height: 1.0 mm • Operating Voltage

Contextual Info: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 130 balls FBGA Area: 8x9 mm; Height: 1.0 mm • Operating Voltage

HYB18T2G802BF

Abstract: HYB18T2G802BF-3
Contextual Info: November 2007 HYB18T 2G 402B F HYB18T 2G 802B F 2 - G b i t D u a l D i e D o u b l e - D a t a - R a t e - T w o SD R A M DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.10 Date: 2007-11-05 Internet Data Sheet HYB18T2G[40/80]2BF 2-Gbit Dual Die Double-Data-Rate-Two SDRAM

ONFI 3.0

Abstract: 202F
Contextual Info: m APPLICATION REVISIONS ì_ NEXT ASSY USED ON ä_ FINAL 1271-01 REV DATE APPROVED ADDED ALLEN VAR TO 3.1.2.4.1 WAVEFORM WAS SINE WAVE 5 /1 /9 7 MSA 5 /2 1 /9 7 WBA CORRECTED PIN DIA, SHEETS 7704 B DESCRIPTION DUPLICATE DRAWING DO NOT REVISE 2 I REV SHEET ^3 UU A-5 Uà L7 U8 U9 50

7718

Abstract: 1274-01 127401 7718 A
Contextual Info: < ì_ ä_ APPLICATION REVISIONS NEXT ASSY USED ON FINAL 1274-01 REV DESCRIPTION DATE 1.0 WAS 1271-01 APPROVED AWB 8 /7 /9 7 DUPLICATE DRAWING 7718 DO NOT REVISE 2 I REV SHEET A3 AA A5 A6 A7 A8 A9 50 REV SHEET 20 2I 22 23 2A 25 26 27 28 29 30 3I REV A REV STATUS

Contextual Info: February 2008 HYB18T 2G 402C F HYB18T 2G 802C F 2 - G b i t D u a l D i e D o u b l e - D a t a - R a t e - T w o SD R A M DDR2 SDRAM RoHS Compliant Products Advance Internet Data Sheet Rev. 0.7 Date: 2008-02-13 Advance Internet Data Sheet HYB18T2G[40/80]2CF

Contextual Info: APPLICATION REVISIONS USED ON FINAL 1 2 8 7 -0 1 7756 NEXT ASSY REV DESCRIPTION DATE APPROVED A 3.3.2.1 WAS 700m A 11/26/97 B REVISED MECH PIN OUT 12/15/97 c ADDED LESS THAN OR EQUAL TO AND PEAK TO PEAK TO 3.1.2.1 / ADDED STILL AIR TO 4.1.1 3 /1 7 /9 8 AWB

Contextual Info: November 2007 HYB18T C1G 80 0 BF HYB18T C1G 16 0 BF 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.30 Date: 2007-11-29 Internet Data Sheet HYB18TC1G[80/16]0BF 1-Gbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.30, 2007-11

HYB18T1G800

Abstract: HYB18T1G400CFL-3S qimonda HYB18T1G160CF-3S HYB18T1G800CFL-3S
Contextual Info: November 2007 HYB18T 1G 400C F HYB18T 1G 800C F HYB18T 1G 160C F 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.20 Date: 2007-11-23 Internet Data Sheet HYB18T1G[40/80/16]0CF L 1-Gbit Double-Data-Rate-Two SDRAM

Contextual Info: EN29PL032A EN29PL032A 32 Mbit 2 M x 16-Bit CMOS 3.0 Volt- only, Simultaneous-Read/Write Flash Memory Distinctive Characteristics Software Features Architectural Advantages • Software command-set compatible with JEDEC 42.4 standard • CFI (Common Flash Interface) compliant

Contextual Info: EN29PL032A EN29PL032A 32 Mbit 2 M x 16-Bit CMOS 3.0 Volt- only, Simultaneous-Read/Write Flash Memory Distinctive Characteristics Software Features Architectural Advantages • Software command-set compatible with JEDEC 42.4 standard • CFI (Common Flash Interface) compliant

Contextual Info: November 2007 HYB18T C1G 80 0 CF HYB18T C1G 16 0 CF 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Advance Internet Data Sheet Rev. 0.51 Date: 2007-12-13 Advance Internet Data Sheet HYB18TC1G[80/16]0CF 1-Gbit Double-Data-Rate-Two SDRAM

Contextual Info: November 2007 HYB18T C25680 0 AF HYB18T C25616 0 AF HYI18TC256800AF HYI18TC256160AF 256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.3 Date: 2007-11-23 Internet Data Sheet HY[B/I]18TC256[80/16]0AF 256-Mbit Double-Data-Rate-Two SDRAM

Contextual Info: December 2007 HYB18TC512800B2F HYB18TC512160B2F HYI18 TC 51280 0 B 2 F HYI18 TC 51216 0 B 2 F 512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.11 Date: 2007-12-05 Internet Data Sheet HY[B/I]18TC512[80/16]0B2F

Contextual Info: January 2008 HYB18T 512400 C F HYB18T 512800 C F HYB18T 512160 C F 512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.20 Date: 2008-01-08 Internet Data Sheet HYB18T512[40/80/16]0CF 512-Mbit Double-Data-Rate-Two SDRAM

d5716

Abstract: HS350 RO4003
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

transistor bc 558

Abstract: bc 558 equivalent HS350 RO4003
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: INTEGRATED CIRCUITS 74ALVCH16501 18-bit universal bus transceiver 3-State Product specification Supersedes data of 1998 Aug 31 IC24 Data Handbook Philips Semiconductors 1998 Sep 29 PHILIPS Philips Sem iconductors Product specification 18-bit universal bus transceiver (3-State)

74LVC652

Contextual Info: INTEGRATED CIRCUITS 74LVC652 Octal transceiver/register with dual enable 3-State Product specification Supercedes data of 1993 Dec 01 IC24 Data Handbook Philips Semiconductors 1998 Jul 29 Philips Semiconductors Product specification Octal transceiver/register with dual enable (3-State)

Contextual Info: IN TE G R A TE D C IR C U ITS 74LVC2952A Octal registered tranceiver with 5-volt tolerant inputs/ouputs 3-State Product specification Philips Semiconductors 1998 Jul 29 PHILIPS Philips Semiconductors Product specification Octal registered tranceiver with 5-volt tolerant

EN29PL032

Abstract: SA16 cFeon Flash chip
Contextual Info: EN29PL032 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the