DATE SHEET OF BA FINAL Search Results

Contextual Info: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm • Operating Voltage

Contextual Info: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 130 balls FBGA Area: 8x9 mm; Height: 1.0 mm • Operating Voltage

HYB18T2G802BF

Abstract: HYB18T2G802BF-3
Contextual Info: November 2007 HYB18T 2G 402B F HYB18T 2G 802B F 2 - G b i t D u a l D i e D o u b l e - D a t a - R a t e - T w o SD R A M DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.10 Date: 2007-11-05 Internet Data Sheet HYB18T2G[40/80]2BF 2-Gbit Dual Die Double-Data-Rate-Two SDRAM

ONFI 3.0

Abstract: 202F
Contextual Info: m APPLICATION REVISIONS ì_ NEXT ASSY USED ON ä_ FINAL 1271-01 REV DATE APPROVED ADDED ALLEN VAR TO 3.1.2.4.1 WAVEFORM WAS SINE WAVE 5 /1 /9 7 MSA 5 /2 1 /9 7 WBA CORRECTED PIN DIA, SHEETS 7704 B DESCRIPTION DUPLICATE DRAWING DO NOT REVISE 2 I REV SHEET ^3 UU A-5 Uà L7 U8 U9 50

Contextual Info: February 2008 HYB18T 2G 402C F HYB18T 2G 802C F 2 - G b i t D u a l D i e D o u b l e - D a t a - R a t e - T w o SD R A M DDR2 SDRAM RoHS Compliant Products Advance Internet Data Sheet Rev. 0.7 Date: 2008-02-13 Advance Internet Data Sheet HYB18T2G[40/80]2CF

Contextual Info: APPLICATION REVISIONS USED ON FINAL 1 2 8 7 -0 1 7756 NEXT ASSY REV DESCRIPTION DATE APPROVED A 3.3.2.1 WAS 700m A 11/26/97 B REVISED MECH PIN OUT 12/15/97 c ADDED LESS THAN OR EQUAL TO AND PEAK TO PEAK TO 3.1.2.1 / ADDED STILL AIR TO 4.1.1 3 /1 7 /9 8 AWB

Contextual Info: November 2007 HYB18T C1G 80 0 BF HYB18T C1G 16 0 BF 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.30 Date: 2007-11-29 Internet Data Sheet HYB18TC1G[80/16]0BF 1-Gbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.30, 2007-11

HYB18T1G800

Abstract: HYB18T1G400CFL-3S qimonda HYB18T1G160CF-3S HYB18T1G800CFL-3S
Contextual Info: November 2007 HYB18T 1G 400C F HYB18T 1G 800C F HYB18T 1G 160C F 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.20 Date: 2007-11-23 Internet Data Sheet HYB18T1G[40/80/16]0CF L 1-Gbit Double-Data-Rate-Two SDRAM

Contextual Info: EN29PL032A EN29PL032A 32 Mbit 2 M x 16-Bit CMOS 3.0 Volt- only, Simultaneous-Read/Write Flash Memory Distinctive Characteristics Software Features Architectural Advantages • Software command-set compatible with JEDEC 42.4 standard • CFI (Common Flash Interface) compliant

Contextual Info: November 2007 HYB18T C1G 80 0 CF HYB18T C1G 16 0 CF 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Advance Internet Data Sheet Rev. 0.51 Date: 2007-12-13 Advance Internet Data Sheet HYB18TC1G[80/16]0CF 1-Gbit Double-Data-Rate-Two SDRAM

Contextual Info: November 2007 HYB18T C25680 0 AF HYB18T C25616 0 AF HYI18TC256800AF HYI18TC256160AF 256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.3 Date: 2007-11-23 Internet Data Sheet HY[B/I]18TC256[80/16]0AF 256-Mbit Double-Data-Rate-Two SDRAM

Contextual Info: December 2007 HYB18TC512800B2F HYB18TC512160B2F HYI18 TC 51280 0 B 2 F HYI18 TC 51216 0 B 2 F 512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.11 Date: 2007-12-05 Internet Data Sheet HY[B/I]18TC512[80/16]0B2F

Contextual Info: January 2008 HYB18T 512400 C F HYB18T 512800 C F HYB18T 512160 C F 512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.20 Date: 2008-01-08 Internet Data Sheet HYB18T512[40/80/16]0CF 512-Mbit Double-Data-Rate-Two SDRAM

d5716

Abstract: HS350 RO4003
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

transistor bc 558

Abstract: bc 558 equivalent HS350 RO4003
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

EN29PL032

Abstract: SA16 cFeon Flash chip
Contextual Info: EN29PL032 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

EON SILICON DEVICES

Abstract: EN29PL032 EN29PL064 3FC000
Contextual Info: EN29PL064/032 EN29PL064/032 64/32 Mbit 4/2 M x 16-Bit CMOS 3.0 Volt- only, Simultaneous-Read/Write Flash Memory Distinctive Characteristics Architectural Advantages • 64/32 Mbit Page Mode devices - Page size of 4 words: Fast page read access from random locations within the page

cFeon

Abstract: EN29PL064 3FE00 cFeon EN SA10 SA11 SA12 SA13 SA14 sa15-s
Contextual Info: EN29PL064 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

74LVC646A

Contextual Info: INTEGRATED CIRCUITS 74LVC646A Octal bus transceiver/register 3-State Product specification Supercedes data of 1998 Mar 25 IC24 Data Handbook Philips Semiconductors 1998 Jul 29 Philips Semiconductors Product specification Octal bus transceiver/register (3-State)

ZT 751

Contextual Info: FINAL ÄHOZ Jr^kS Am7949 Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Ideal for Fiber-ln-The-Loop FITL applications Programmable constant-current feed ■ Low standby power Current gain = 200 ■ -21 V to -5 8 V battery operation Programmable loop-detect threshold

20-PIN

Abstract: HS350 RO4003
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

RO4003

Abstract: 20-PIN HS350
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2054K GaAs MMIC DBS 4 x 2 IF SWITCH MATRIX FEATURES • High isolation : ISL = 40 dB TYP. @ f = 0.95 to 2.15 GHz, VCONT = +5.0 V/0 V • Control voltage : VCONT H = +3.0 to +5.5 V (+5.0 V TYP.) : VCONT (L) = −0.5 to +0.5 V (0 V TYP.)

Contextual Info: HB52R329E22-F 256 MB Registered SDRAM DIMM 32-Mword x 72-bit, 100 MHz Memory Bus, 2-Bank Module 36 pcs of 16 M × 4 Components PC100 SDRAM E0112H10 (1st edition) (Previous ADE-203-1046A (Z) Feb. 28, 2001 Description The HB52R329E22 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed

uPD45D128164G5-C75-9LG

Abstract: uPD45D128442G5-C75-9LG uPD45D128442G5-C80-9LG uPD45D128842G5-C75-9LG uPD45D128842G5-C80-9LG
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD45D128442, 45D128842, 45D128164 128 M-bit Synchronous DRAM with Double Data Rate 4-bank, SSTL_2 Description The µPD45D128442, 45D128842, 45D128164 are high-speed 134,217,728 bits synchronous dynamic randomaccess memories, organized as 8,388,608x4x4, 4,194,304x8x4, 2,097,152x16x4 (word x bit x bank), respectively.