DATE CODE MARKING SAMSUNG NAND Search Results

74lvc3245

Abstract: SAMSUNG NAND FLASH SAMSUNG NAND FLASH TRANSLATION LAYER samsung NAND date code marking samsung Nand "bad block" smartmedia ecc SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung hdd f3 SmartMedia Logical Format SAMSUNG NAND FTL
Contextual Info: Confidential SAMSUNG NAND FLASH APPLICATION NOTE Software Driver of SmartMedia TM (Ver 3.0) MEMORY PRODUCT & TECHNOLOGY SAMSUNG ELECTRONICS Co., LTD 1 ELECTRONICS Confidential SAMSUNG NAND FLASH Revision History Revision Date Name 1.0 1.1 2.0 98/12/10 99/03/04

RISC-Processor s3c2410

Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH

Contextual Info: K9F5608U0M-YCB0,K9F5608U0M-YIB0, K9F5608U0M-MCB0 Preliminary FLASH MEMORY Document Title 32M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April. 10th 1999 0.1 Revised real-time map-out algorithm refer to technical notes

KM29U128AT

Abstract: SAMSUNG NAND Flash Qualification Report K9F2808U0A
Contextual Info: K9F2808U0A-YCB0, K9F2808U0A-YIB0 FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advanced Information 0.0 Initial issue. April 10th 1999 0.1 1. Revised real-time map-out algorithm refer to technical notes

date code marking samsung Nand

Abstract: K9F2808U0A K9F2808U0A-YIB0 K9F2808U0A-YCB0 KM29U128AIT KM29U128AT samsung flash marking
Contextual Info: K9F2808U0A-YCB0, K9F2808U0A-YIB0 FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advanced Information 0.0 Initial issue. April 10th 1999 0.1 1. Revised real-time map-out algorithm refer to technical notes

SAMSUNG moviNAND

Abstract: marking date code samsung semiconductor NAND FLASH QDP movinand DECODER SLC nand hamming code 512 bytes 48 TSOP1 1220F samsung 128G nand flash NAND Flash Code Information date code marking samsung Nand K9F2808U0C-PCB0
Contextual Info: FLASH MEMORY K9F2808U0C Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm Sep. 5th 2002

K9F5608U0M-YCB0

Abstract: date code marking samsung Nand K9F5608U0M K9F5608U0M-YIB0 264Mbit
Contextual Info: K9F5608U0M-YCB0,K9F5608U0M-YIB0 FLASH MEMORY Document Title 32M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April. 10th 1999 0.1 Revised real-time map-out algorithm refer to technical notes July. 23th 1999

date code marking samsung Nand

Contextual Info: K9F5608U0M-YCB0,K9F5608U0M-YIB0 FLASH MEMORY Document Title 32M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April. 10th 1999 0.1 Revised real-time map-out algorithm refer to technical notes July. 23th 1999

400F

Abstract: KM29W16000BIT KM29W16000BT
Contextual Info: K9F1608W0B-TCB0, K9F1608W0B-TIB0 FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1999 Preliminary 0.1 1. Revised real-time map-out algorithm refer to technical notes

SAMSUNG 4gb NAND Flash Qualification Report

Abstract: ddr3 MTBF SAMSUNG 256Mb NAND Flash Qualification Reliability part number decoder toshiba NAND Flash MLC DDR3 pcb layout raw card f so-dimm nand flash socket lga 60 DDR3 sodimm pcb layout samsung microsd card 2gb micron DDR3 pcb layout Hynix 32Gb Nand flash
Contextual Info: INDUSTRIAL MEMORY SOLUTIONS NAND FLASH PRODUCTS & DRAM MODULES Why choose Swissbit Swissbit is the largest independent DRAM module and Flash storage manufacturer in Europe. This enables Swissbit to be a global leader in technology supplying High Quality Memory solutions to the several key market areas

K9F6408U0A-TCB0

Abstract: 400F K9F6408U0A K9F6408U0A-TIB0 KM29U64000AIT KM29U64000AT
Contextual Info: K9F6408U0A-TCB0, K9F6408U0A-TIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1999 Preliminary 0.1 1. Revised real-time map-out algorithm refer to technical notes

flash hamming ecc

Abstract: 400F K9F3208U0B-TCB0 SAMSUNG NAND Flash Qualification Report
Contextual Info: Advanced Information FLASH MEMORY K9F3208U0B-TCB0, K9F3208U0B-TIB0 Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark July 17th 2000 Advanced Information 1. Changed the following items ITEM

KM29W32000AIT

Abstract: K9F3208W0A 400F K9F3208W0A-TCB0 K9F3208W0A-TIB0 KM29W32000AT SAMSUNG NAND Flash Qualification Report
Contextual Info: K9F3208W0A-TCB0, K9F3208W0A-TIB0 FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 0.1 Data Sheet, 1999 April 10th 1999 Advanced Information Final 1. Added CE don’t care mode during the data-loading and reading

date code marking samsung Nand

Abstract: date code marking toshiba Nand spi hynix nand flash nand flash HYNIX MLC hynix SLC nand 64-LQFN cdi schematic diagram toshiba NAND Flash MLC reset nand flash HYNIX "Flash Memory select"
Contextual Info: W86L167C WINBONDSD CARD CONTROLLER -I- Publication Release Date: April 15, 2005 Revision 1.0 W86L167C Preliminary Table of Contents1. GENERAL DESCRIPTION . 1

spi hynix nand flash

Abstract: L167C 48-LQFN ACMD42 64-LQFN nand flash HYNIX MLC date code marking toshiba Nand HYNIX PACKING date code marking samsung Nand toshiba NAND Flash MLC
Contextual Info: W86L167C WINBONDSD CARD CONTROLLER -I- Publication Release Date: December 2, 2004 Revision 0.6 W86L167C Preliminary Revision History PAGES DATES VERSION VERSION ON WEB 1 - 5/2004 0.50 N/A First published. 2 19, 20 7/13/2004 0.51 N/A Update reference schematic.

K9F1208R0C-JIB0

Abstract: K9F1208U0C K9F1208U0C-PCB0 K9F1208R0C-JIB K9F1208R0C K9F1208R0C-JIB00 SAMSUNG NOR Flash Qualification Report
Contextual Info: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

SAMSUNG NAND Flash Qualification Report

Contextual Info: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

SAMSUNG NAND Flash Qualification Report

Abstract: K9F1208U0CJIB0 marking date code samsung semiconductor
Contextual Info: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

K9F1208U0C-PCB0

Abstract: marking date code samsung semiconductor K9F1208U0C K9F1208U0CPCB0 K9F1208U0C-JIB0 K9F1208U0CJIB0 K9F1208U0C-PIB K9F1208U0CPIB0 K9F1208U0CJIB0T K9F1208U0C-JIB0T
Contextual Info: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

K9F1208U0C-PCB

Contextual Info: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

date code body marking samsung

Abstract: K9S5608V0M K9S5608V0M-SSB0 SMFV032 date code marking samsung Nand
Contextual Info: SmartMediaTM K9S5608V0M-SSB0 Document Title 32M x 8 Bit SmartMediaTM Card Revision History Revision No History Draft Date Remark 0.0 Initial issue July 14th 1998 Advanced Information 0.1 1. Changed tR Parameter : 7µs Max. → 10µs(Max.) 2. Changed Nop : 10 cycles(Max.) → Main Array 2 cycles(Max.)

SmartMedia Logical Format

Abstract: marking 73H K9S2808V0A K9S2808V0A-SSB0 K9S5608V0M SMFV016A
Contextual Info: SmartMediaTM K9S2808V0A-SSB0 Document Title 16M x 8 Bit SmartMediaTM Card Revision History Revision No History Draft Date Remark 0.0 Initial issue. April 10th 1999 Advanced Information 0.1 1. Revised real-time map-out algorithm refer to technical notes 2. Changed voltage-density model marking method on SmartMedia

Contextual Info: SmartMediaTM K9S2808V0A-SSB0 Document Title 16M x 8 Bit SmartMediaTM Card Revision History History Draft Date Remark 0.0 Initial issue. April 10th 1999 Advanced Information 0.1 1 Revised real-time map-out algorithm refer to technical notes) 2) Changed voltage-density model marking method on SmartMedia

SmartMedia Logical Format

Abstract: date code body marking samsung date code marking samsung K9S3208V0A K9S3208V0A-SSB0 SMFV004A SmartMedia Logical Format ID maker code SmartMedia Physical Format
Contextual Info: SmartMediaTM K9S3208V0A-SSB0 Document Title 4M x 8 bit SmartMedia TM Card Revision History Revision No. History Draft Date Remark 0.0 Initial Issue April 10th 1999 Final 0.1 1. Revised real-time map-out algorithm refer to technical notes 2. Changed voltage-density model marking method on SmartMedia