DATE CODE MARKING NEC TRANSISTOR Search Results

80N055

Abstract: date code marking NEC MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR code marking NEC NEC TRANSISTOR MARKING CODE nec 80N055 nec 2502 4 pin NP80N055MLE 80n05
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP80N055MLE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP80N055MLE is N-channel MOS Field Effect PART NUMBER LEAD PLATING T.B.D. Pure Sn Tin Transistor designed for high current switching

NEC TRANSISTOR MARKING CODE

Abstract: date code marking NEC NEC MARKING CODE code marking NEC marking NEC rf transistor NEC Date code Marking nec npn rf NEC semiconductor
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR NE685M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • S21e = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

date code marking NEC

Abstract: NEC TRANSISTOR MARKING CODE code marking NEC NEC MARKING CODE nec npn rf
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR NE851M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin super lead-less minimold package

code marking NEC

Abstract: date code marking NEC NEC MARKING CODE
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR NE687M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-pin super lead-less minimold package

PS9801

Abstract: NEC MARKING CODE code marking NEC NT931 9801 so-8 NEC 9801 date code marking NEC nec inverter
Contextual Info: PHOTOCOUPLER PS9801 0.6 A OUTPUT CURRENT, HIGH CMR IGBT GATE DRIVE 8-PIN SSOP SO-8 PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS9801 is an optically coupled isolator containing a GaAlAs LED on the input side and a photo diode, a signal processing circuit and a power output transistor on the output side on one chip.

EN60747-5-2

Abstract: PS8821-1 PS8821-2 VDE0884 PS88211F
Contextual Info: PHOTOCOUPLER PS8821-1,-2 1 Mbps ANALOG OUTPUT TYPE 8-PIN SSOP SO-8 HIGH-SPEED PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS8821-1, -2 are optically coupled isolators containing a GaAlAs LED on the light emitting diode (input side) and a PIN photodiode and a high-speed amplifier transistor on the output side on one chip.

k4202

Abstract: 2SK4202 nec k4202 d1922 2SK4202-S19-AY D19229EJ1V0DS
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4202 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4202 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 7.5 mΩ MAX. (VGS = 10 V, ID = 42 A)

date code marking NEC

Abstract: NEC TRANSISTOR MARKING CODE code marking NEC M33 marking NEC MARKING CODE NE685M33-T3 NE685M33 M33 TRANSISTOR
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR NE685M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz 2 • S21e = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

M33 TRANSISTOR

Abstract: NEC TRANSISTOR MARKING CODE NE687M33 NE687M33-T3
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR NE687M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-pin super lead-less minimold (M33) package

PS2506-4

Abstract: ps2506-4-a PS2506L-1-E3 PS2506L-2 PS2506L-2-E3 PS2506L-4 PS2506-1 PS2506-2 PS2506L-1 PS2506-2-A
Contextual Info: PHOTOCOUPLER PS2506-1,-2,-4,PS2506L-1,-2,-4 HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2506-1, -2, -4 and PS2506L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode

transistor m33

Abstract: NEC TRANSISTOR MARKING CODE M33 TRANSISTOR NE851M33 NE851M33-T3 date code marking NEC
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR NE851M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin super lead-less minimold (M33) package

transistor K4145

Abstract: 2sk4145
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4145 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 10 mΩ MAX. (VGS = 10 V, ID = 42 A)

K4201

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)

NP70N04MUG

Abstract: 70N04 NP70N04MUG-S18-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP70N04MUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP70N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP70N04MUG-S18-AY LEAD PLATING

2sk4075

Abstract: TRANSISTOR K4075 k4075 2sK4075 TRANSISTOR 2SK4075-ZK k407
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4075 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE 2SK4075-ZK-E1-AY Pure Sn Tin

K4143

Abstract: TRANSISTOR K4143 D1877 transistor equivalent k4143 2SK4143 NEC TRANSISTOR MARKING CODE k414 2SK4143-S17-AY code marking NEC marking transistor KE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4143 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4143 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on 1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A)

D1866

Abstract: 70n04 NP70N04MUG NP70N04MUG-S18-AY NEC MARKING CODE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP70N04MUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP70N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP70N04MUG-S18-AY LEAD PLATING

A2757

Abstract: PA2757GR-E2-AT
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2757GR SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The μ PA2757GR is Dual N-channel MOS Field Effect 8 Transistors designed for switching application. 5 1 : Source 1 2 : Gate 1 7, 8 : Drain 1

K4078

Abstract: C277C nec 277c nec marking code 277 C 277 C 2SK4078-ZK-E1-AY 2SK4078-ZK-E2-AY 2SK4078 D18885EJ1V0DS
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4078 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4078 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK4078-ZK-E1-AY Note 2SK4078-ZK-E2-AY

82N06

Abstract: transistor 8550 sd equivalent transistor 8550 D1877 NP82N06PLG NP82N06PLG-E1-AY MP-25ZP NP82N06PLG-E2-AY data transistor ss 8550 d 41A28
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N06PLG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N06PLG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING NP82N06PLG-E1-AY

D1859

Abstract: NEC 109N04 MP-25ZP NP109N04PUG NP109N04PUG-E1-AY NP109N04PUG-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP109N04PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP109N04PUG-E1-AY Note

160N04

Abstract: MP-25ZT nec a640
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TDG-E1-AY Note

d1875

Abstract: 160N04 D18754EJ1V0DS00 NP160N04TUG NP160N04TUG-E1-AY NP160N04TUG-E2-AY TO-263-7pin
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TUG-E1-AY Note

Contextual Info: DATA SHEET PHOTOCOUPLER PS8501L1,PS8501L2 HIGH SPEED ANALOG OUTPUT TYPE 8mm creepage 8-PIN PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS8501L1 and PS8501L2 are 8-pin high speed photocouplers containing a GaAIAs LED on input side and a PN photodiode and a high speed amplifier transistor on output side on one chip. The PS8501 is in a plastic DIP Dual