DATA SHEET UM 66 IN Search Results

Contextual Info: SECTION 2 SPECIFICATIONS GENERAL CHARACTERISTICS The DSP56002 is fabricated in high-density HCMOS w ith TTL com patible inputs and outputs. MAXIMUM RATINGS CAUTION This device contains circuitry protecting against damage due to high static voltage or electrical fields; however, normal precautions

931c66

Abstract: ic 8pin C66
Contextual Info: 93LC46/56/66 M ic ro c h ip 1K/2K/4K 2.0V CMOS Serial EEPROM FEATURES DESCRIPTION • Single supply with program m ing operation dow n to 2.0V Com m ercial only • Low pow er C M OS technology - 1 m A active current typical - 5 nA standby current (typical) at 3.0V

TRIPLEXER

Abstract: passive filter 1550nm BH12928 GPON ONU
Contextual Info: Data Sheet PON Filter for FTTx 1310/1490/1550nm Bookham filters leverage the proprietary Advanced Energetic Deposition AED process to produce the industry’s best PON filter solutions. The AED process features state-of-the-art layer thickness control to produce thin-film interference filters that

Contextual Info: 93AA46/56/66 1K/2K/4K 1.8V CMOS Serial EEPROM FEATURES • Single supply with program m ing operation down to 1,8V PACKAGETYPE DIP • Low power CMOS technology - 70 nA typical active READ current at 1,8V cs E CLK c 1 ? - 2 nA typical standby current at 1,8V

Contextual Info: 93LC46/56/66 M ic ro c h ip 1K/2K/4K 2.0V CMOS Serial EEPROM FEATURES DESCRIPTION Single supply with program m ing operation down to 2.0V Com m ercial only Low pow er CMOS technology - 1 m A active current typical - 5 |iA standby current (typical) at 3.0V

5569C

Contextual Info: IB IL 24 PWR IN/F-D IB IL 24 PWR IN/F-D-PAC Inline Power Terminal With Fuse and Diagnostics Data Sheet 5569C 5 5 6 9 A 0 0 1 02/2003 The IB IL 24 PWR IN/F-D and IB IL 24 PWR IN/F-D-PAC only differ in the scope of supply see "Ordering Data" on page 11 . Their function and

Contextual Info: $ M ic r o c h ip 93LCS56/66 2K/4K 2.5V CMOS Serial EEPROM with Software Write Protect FEATURES DESCRIPTION • Single supply w ith program m ing operation down to 2.5V The Microchip Technology Inc. 93LCS56/66 are low volt­ age Serial Electrically Erasable PROMs with memory

200G

Abstract: WDM Filter
Contextual Info: D 200GHz WDM Filter Components for OADM Features • 64GHz clear channel passband • ITU and custom wavelengths Bookham narrowband filters leverage the proprietary Advanced Energetic Deposition AED process to produce the industry’s best banded filter

B200

Contextual Info: D Band Filters for 200GHz Add/Drop Multiplexing Bookham band skip filters leverage the proprietary Advanced Energetic Deposition AED process to produce the industry’s best banded filter solution. The AED process features state-of-the-art layer thickness control to produce thin-film interference

C93LC46

Abstract: 93LC46 93LC56 93LC66
Contextual Info: M 93LC46/56/66 ic r o c h ip 1K/2K/4K 2.0V Microwire Serial EEPROM BLOCK DIAGRAM FEATURES • Single supply w ith program m ing operation down to 2.0 V C om m ercial only • Low pow er C M O S tech nolog y - 1 mA active cu rre n t typical - 5 nA stan dby curre nt (typical) at 3.0V

transistor d 1556

Contextual Info: D 100GHz WDM Filter Components for OADM Features • 27.5GHz and 50GHz clear channel passbands • ITU and custom wavelengths Bookham narrowband filters leverage the proprietary Advanced Energetic Deposition AED process to produce the industry’s best banded filter

EPM 5192

Abstract: EPM5192
Contextual Info: EPM5192 EPLD Features H igh-density, 192 macrocell, general-purpose MAX 5000 EPLD, easily integrating com plete logic boards into a single package High-speed multi-LAB architecture t PD as fast as 25 ns Counter frequencies up to 50 MHz Pipelined data rates up to 62.5 MHz

EPM5130

Abstract: 100-Pin Package Pin-Out Diagram D2-3401 EPM 5130
Contextual Info: EPM5130 EPLD □ □ Features □ □ □ □ □ □ □ High-density, 128-macrocell, general-purpose MAX 5000 EPLD 128 m acrocells optim ized for pin-intensive applications, easily integrating over 60 TTL MSI and SSI components High-speed multi-LAB architecture

805-0086-02

Abstract: J0801 UltraSPARC ii Sun UltraSparc II
Contextual Info: SME5421MCZ-300 microsystems Ju ly 1998 UltraSPARC -ll/CPU Module DATA SHEET 300 M Hz CPU, 0.5 MB E-cache, UPA, 66 M Hz PCI D e s c r ip tio n '11 The UltraSPARC™-Hi CPU m odule is a h igh perform ance, SPARC V9-com pliant, sm all form -factor CPU m odule. It interfaces to the UltraSPARC P ort A rchitecture 64S UPA64S interconnect bus, m ain m em ory, and

Contextual Info: Safety module - IB IL 24 PSDOR 4-PAC - 2985864 Please be informed that the data shown in this PDF Document is generated from our Online Catalog. Please find the complete data in the user's documentation. Our General Terms of Use for Downloads are valid

EPM7000

Abstract: hhm7
Contextual Info: M A X 7000A Includes M A X 70 0 0 A E Programmable Logic Device Family October 1998. ver. 1.2 Data Sheet Formerly know n as Michelangelo devices High-perform ance CMOS EEPROM-based program m able logic devices PLDs built on second-generation M ultiple A rray M atrix

Contextual Info: Extract from the online catalog IB IL SSI-IN-PAC Order No.: 2819574 Inline measurement terminal block for absolute encoders, complete with accessories connector and labeling field , 1 input for absolute

Contextual Info: Direct Attach DA1000 LEDs CxxxDA1000-Sxx000 Data Sheet Cree’s Direct Attach DA1000 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for

Contextual Info: Safety module - IB IL 24 LPSDO 8 V2-PAC - 2700606 Please be informed that the data shown in this PDF Document is generated from our Online Catalog. Please find the complete data in the user's documentation. Our General Terms of Use for Downloads are valid

GS3039

Abstract: EM-3046 ba 521
Contextual Info: GENNUM C|CC|ass DHybrid C O R P O R A T I O N GS3039 DATA SHEET FEATURES DESCRIPTION • small outline for CIC applications The GS3Q39 is a G e n n u m p ro p rie ta ry h y b rid fo r C IC a p plication s. It in corpo rates a new ly de sig n e d in tegrated

J-Lead, QFP ceramic

Abstract: PQFP 176 J-Lead
Contextual Info: EPM5192A EPLD □ Features □ □ Preliminary Information □ □ □ High-performance, second-generation MAX 5000 EPLD developed on an advanced 0.65-m icron CM OS EPROM process High-speed upgrade for existing EPM 5192 designs High-speed multi-LAB architecture

Contextual Info: M ic r o c h ip 93LC46/56/66 1K/2K/4K 2.0V Microwire Serial EEPROM BLOCK DIAGRAM FEATURES • S ingle sup ply w ith pro gra m m ing op era tion down to 2.0 V C o m m ercia l only • Low pow er C M O S te ch n o lo g y • • • • • • • •

Contextual Info: AMDÎ1 AMD-K6 E High-Performance, AMD-K6 Embedded Processor DISTINCTIVE CHARACTERISTICS • Advanced 6-Issue RISC86 Superscalar M ic roa rch itectu re - Seven parallel specialized execution units ■ Large On-Chip Split 64-Kbyte Level-One L1 Cache - 32-Kbyte Instruction cache with additional

F1H16

Abstract: EPM 5192 epm5192 MSI MS-5 IC LM 384 gn
Contextual Info: EPM 5192 EPLD F e a tu re s • High-density, 192 macrocell, general-purpose M AX 5000 EPLD, easily integrating com plete logic boards into a single package High-speed m ulti-LAB architecture tpD as fast as 15 ns Counter frequencies up to 83.3 MHz Pipelined data rates up to 100 MHz