DARLINGTON TRANSISTOR WITH BUILT-IN TEMPERATURE Search Results

300V transistor npn 15a

Abstract: MP6501 s1,3/2iv
Contextual Info: MP6501 SILICON NPN TRIPLE DIFFUSED TY PE DARLINGTON POWER TRAN SISTO R 6 IN 1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 6 Darlington Transistor are Built-in to 1 Package. . With Built-in Free Wheeling Diode.

t01 transistor

Abstract: STD03N SANKEN AUDIO sanken transistor TRANSISTOR sanken catalog std03 STD03P darlington transistor for audio power application 8DARLINGTON sanken power transistor
Contextual Info: Darlington Transistor with built-in compensation diodes STD03P March, 2006 •Package -MT-105 TO3P 5-pin ■Features ● High collector power dissipation: Pc=160W (with TO-3P) ● Low internal impedance by means of thinner die structure ● Built-in temperature compensation diode

TRANSISTOR sanken catalog

Abstract: t01 transistor sanken power transistor sanken t01 STD03N darlington transistor for audio power application darlington transistor with built-in temperature c darlington transistor with built-in temperature sanken audio Power 5pin darlington
Contextual Info: Darlington Transistor with built-in compensation diodes STD03P March, 2006 •Package -MT-105 TO3P 5-pin ■Features ● High collector power dissipation: Pc=160W (with TO-3P) ● Low internal impedance by means of thinner die structure ● Built-in temperature compensation diode

std03n

Abstract: t01 transistor TRANSISTOR sanken catalog sanken power transistor T01001 sanken sanken audio
Contextual Info: Darlington Transistor with built-in compensation diodes STD03N March, 2006 •Package- MT-105 TO3P 5-pin ■Features ● High collector power dissipation: Pc=160W (with TO-3P) ● Low internal impedance by means of thinner die structure ● Built-in temperature compensation diode

TRANSISTOR sanken catalog

Abstract: SANKEN POWER TRANSISTOR t01 transistor SANKEN AUDIO STD03N STD03P T01001 B105 sanken transistor "Sanken Rectifiers"
Contextual Info: Darlington Transistor with built-in compensation diodes STD03N March, 2006 •Package- MT-105 TO3P 5-pin ■Features ● High collector power dissipation: Pc=160W (with TO-3P) ● Low internal impedance by means of thinner die structure ● Built-in temperature compensation diode

2sd2011

Abstract: 2SB1333 transistor 2SD 2sd darlington
Contextual Info: 2SD2011 Transistor, NPN, Darlington Features Dimensions Units : mm • available in MRT package • Darlington connection provides high dc current gain (hFE) • damper diode incorporated • built-in resistors between base and emitter • complementary pair with 2SB1333

FJB102

Contextual Info: FJB102 High Voltage Power Darlington Transistor FJB102 High Voltage Power Darlington Transistor Features • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. • Low Collector-Emitter Saturation Voltage • High Collector-Emitter Sustaining Voltage • Monolithic Construction with Built-in Base-Emitter Shunt Resistors

Contextual Info: FJB102 High Voltage Power Darlington Transistor FJB102 High Voltage Power Darlington Transistor Features • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. • Low Collector-Emitter Saturation Voltage • High Collector-Emitter Sustaining Voltage • Monolithic Construction with Built-in Base-Emitter Shunt Resistors

MG10G6EL2

Abstract: w327 mg10g
Contextual Info: MG10G6EL2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 6 Darlington Transistor are Built-in to 1 Package. . With Built-in Free Wheeling Diode.

LB1273R

Abstract: LB1273
Contextual Info: Ordering number:ENN667B Monolithic Digital IC LB1273R 6-Unit, Darlington Transistor Array Overview Package Dimensions The circuit construction of this IC is a Darlington transistor array with six units, most suitable for printer hammer drive, lamp, and relay drive. With built-in protective diodes against negative inputs, it is advantageous in designing drive circuits for printer calculators and cash registers.

MG15G6EL2

Contextual Info: MG15G6EL2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector Is Isolated from Case. . 6 Darlington Transistor are Built-in to 1 Package . With Built-in Free Wheeling Diode. . High DC Current Gain

TRANSISTOR ARRAY

Abstract: NTE2083
Contextual Info: NTE2083 Integrated Circuit 6−Segment, 150mA Darlington Transistor Array Description: The circuit construction of this IC is a Darlington transistor array with six units, most suitable for printer hammer drive, lamp, and relay drive. With built−in protective diodes against negative inputs, it is advantageous in designing drive circuits for printer calculators and cash registers.

2SB1333

Contextual Info: 2SB1333 Transistor, PNP Features Dimensions Units : mm • available in MRT package • Darlington connection provides high dc current gain (hFE) • • damper diode is incorporated built in resistors between base and emitter complementary pair with 2SD2011

TIP 102 transistor

Abstract: transistor tip 107 Transistor tip 102
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE= 1000 @ VCE=4V, lc = 3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS

Hitachi DSA002756

Contextual Info: 2SD2423 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Features The transistor with a built-in zener diode of surge absorb. Outline 2SD2423 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage

Contextual Info: Standard ICs 6-channel high current driver BA664 The BA664 is an 1C with a built-in clamp diode, developed for the purpose of minimizing attachments, and contains a Darlington transistor array of six circuits with input resistance. Input and output are directed in the same direction

tip 102

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, lc =3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE

Contextual Info: NPN EPITAXIAL DARLINGTON TRANSISTOR TIP140F/141F/142F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3PF Complement to TIP145F/146F/147F ABSOLUTE MAXIMUM RATINGS

TIP145F

Abstract: TIP146F TIP147F 147F
Contextual Info: PNP EPITAXIAL DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3PF Complement to TIP140F/141F/142F ABSOLUTE MAXIMUM RATINGS

TIP102

Abstract: NPN Transistor VCEO 80V 100V DARLINGTON IC 8A TIP102 Darlington transistor NPN Transistor TO220 VCEO 80V 100V NPN Transistor 8A TIP100 TIP101 NPN Transistor VCEO 80V 100V DARLINGTON TO 106 transistor base collector emitter
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE

TIP147F

Abstract: TIP146F TIP145F
Contextual Info: PNP EPITAXIAL DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3PF Complement to TIP140F/141F/142F ABSOLUTE MAXIMUM RATINGS

2sd1525 toshiba

Contextual Info: 2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1525 High Current Switching Applications • Unit: mm High collector current: IC = 30 A • High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) • Monolithic construction with built-in base-emitter shunt resistor.

2SD1525

Abstract: 2-21F1A
Contextual Info: 2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1525 High Current Switching Applications • Unit: mm High collector current: IC = 30 A • High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) • Monolithic construction with built-in base-emitter shunt resistor.

Contextual Info: 2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD1525 High Current Switching Applications • Unit: mm High collector current: IC = 30 A • High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) • Monolithic construction with built-in base-emitter shunt resistor.