DARLINGTON TRANSISTOR ARRAYS Search Results

uln2003r

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD ULN2003R Preliminary LINEAR INTEGRATED CIRCUIT HIGH VOLTAGE HIGH CURRENT DARLINGTON TRANSISTOR ARRAY  DESCRIPTION The UTC ULN2003R is high-voltage, high-current darlington transistor arrays. Each consists of seven NPN darlington pairs

ULN2003 RELAY DRIVER

Contextual Info: ULN2003 LINEAR INTEGRATED CIRCUIT HIGH VOLTAGE AND HIGH CURRENT DARLINGTON TRANSISTOR ARRAY DESCRIPTION The ULN2003 is a monolithic high voltage and high current Darlington transistor arrays. It consists of seven NPN darlington pairs that features high-voltage outputs with common-cathode

M63828DP

Abstract: 16PIN M63828WP 16P4X-A IL500
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63828WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made

M54523

Abstract: pnp 8 transistor array 18P4G 20P2N-A M54583 M54583FP M54583P 8 pin 4v power supply ic
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor

M54583FP

Abstract: pnp darlington array M54523 PNP DARLINGTON ARRAYS 18P4G 20P2N-A M54583 M54583P pnp 8 transistor array
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor

IL500

Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63827WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63827WP and M63827DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made

M54522

Abstract: m54566 M54566WP
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566WP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION PIN CONFIGURATION M54566WP are seven-circuit collector-current synchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor

8 pin 4v power supply ic

Abstract: Seven Transistor Array PNP M54222 M54566FP M54566P pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY PNP DARLINGTON ARRAYS
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566P and M54566FP are seven-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor

18P4G

Abstract: 20P2N-A M54562FP M54562P pnp darlington array pnp 8 transistor array npn 8 transistor array 24 "transistor array"
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54562P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP

M54522

Abstract: M54566DP Seven Transistor Array PNP m54566
Contextual Info: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54566DP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566DP is seven-circuit collector current sink type darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated

XR-2011

Abstract: XR2011 XR2013CN XR2013 XR-2012
Contextual Info: Z * EX4R XR-2011/12/13/14 High-Voltage, High-Current Darlington Transistor Arrays FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The XR-2011/2012/2013/2014 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic

M54523

Abstract: M54583FP 18P4G 20P2N-A M54583 M54583P pnp 8 transistor array 8-channel PNP darlington array
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor

M63827DP

Abstract: M63827WP 16PIN 16P4X-A IL500
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63827WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63827WP and M63827DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made

Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63828WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made

darlington pair transistor

Abstract: J 620 610 transistor DARLINGTON ARRAYS darlington pair power transistor darlington pair transistor table ILN2003 darlington power transistor Monolithic Transistor Pair ILN2003A KK2003A
Contextual Info: TECHNICAL DATA HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS The KK2003A are monolithic high-voltage, high-current Darlington transistor arrays. Each consists of seven n-p-n Darlington pairs that feature high-voltage outputs with commoncathode clamp diodes for switching inductive loads. The collectorcurrent rating of a single Darlington pair is 500 mA. The

M54519P

Abstract: M54519FP IC M54519P
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54519P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54519P and M54519FP are seven-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current

Contextual Info: XR-2001 /2/3/A KSr EXAR High-Voltage, High-Current Darlington Transistor Arrays FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION - W The XR-2001 /2002/2003/2004 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic

ILN2003AD

Abstract: ILN2003AN darlington pair transistor ILN2003A J 620 610 transistor seven transistor drivers
Contextual Info: TECHNICAL DATA HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS The ILN2003A are monolithic high-voltage, high-current Darlington transistor arrays. Each consists of seven n-p-n Darlington pairs that feature high-voltage outputs with commoncathode clamp diodes for switching inductive loads. The collectorcurrent rating of a single Darlington pair is 500 mA. The

2002cn

Abstract: XR-2001 XR-2001CN XR-2002 XR-2002CN XR-2003 XR-2003CN XR-2004 XR-2004CN
Contextual Info: Z * EXAR XR-2001/2/3/4 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM V The XR-2001/2002/2003/2004 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic

pnp darlington array

Abstract: PNP DARLINGTON SINK DRIVER 500ma pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY darlington Mitsubishi M54585 darlington array M54587 20P2N-A M54587FP
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54587P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor

XR-2203

Abstract: XR-2203CP XR-2204 XR2203CP XR2204CP 2203CP XR-2202 2204cp XR2203 XR2204
Contextual Info: Z * EXAR XR-220172/3/4 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The XR-2201, XR-2202, XR-2203, and XR-2204 Darlington transistor arrays are comprised of seven sil­ icon NPN Darlington pairs on a single monolithic sub­

Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54561P 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54561P is seven-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform

M54516P

Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54516P 5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54516P is five-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

NPN DARLINGTON TRANSISTOR ARRAY

Abstract: 300 W npn darlington power transistors M54522WP Transistor Array
Contextual Info: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54522WP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54522WP is an eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current