DARLINGTON TRANSISTOR Search Results

Contextual Info: ULN2003 YOUDA INTEGRATED CIRCUIT HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY—ULN2003 DESCRIPTION Darlington arrays are comprised of seven silicon NPN darlington pairs on a common monolithic substrate. FEATURES ULN2003 has a 2.7kΩ series base resistor for each darlington pair, allowing operation directly with TTL or

M208 B1

Abstract: fuji darlington module fuji transistor modules 1di50
Contextual Info: High Hf e Series Darlington Modules Ratings and Characteristics Type Single Darlington Modules 600V Dual Darlington Modules 600V Six Pack Darlington Modules 600V SIL Six Pack Darlington Modules 600V v CE0 sus IV) v CEX(sus) <V) (A) •c hFE (min) (A) VCE

MJE802

Contextual Info: MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON APPLICATIONS GENERAL PURPOSE SWITCHING ■ DESCRIPTION The MJE802 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration,

2N6055

Contextual Info: 2N6055 Darlington complementary silicon power transistor 15.26 Transistors Darlington . Page 1 of 1 Enter Your Part # Home Part Number: 2N6055 Online Store 2N6055 Diodes Darlington complementary silicon power transistor Transistors Integrated Circuits Optoelectronics

1N4001 transistor free

Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn
Contextual Info: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.

2N6056

Abstract: ALL SILICON COMPLEMENTARY transistors darlington
Contextual Info: 2N6056 Darlington complementary silicon power transistor 8.63 Transistors Darlington T. Page 1 of 2 Enter Your Part # Home Part Number: 2N6056 Online Store 2N6056 Diodes Darlington complementary silicon power transistor Transistors Integrated Circuits Optoelectronics

1DI100MA-050

Abstract: 2d175m-120 6DI20MS-050 fuji darlington module 6di50m-120 1DI100MA 1DI100MA050 2DI50M-050 1DI100 M613
Contextual Info: H igh H f e Series Darlington Modules Ratings and Characteristics Type Single Darlington Modules 600V Dual Darlington Modules 600V Six Pack Darlington Modules 600V SIL Six Pack Darlington Modules 600V v CE0 sus IV) vCEX(sus) <V) •c (A) hFE (min) •c (A)

Contextual Info: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON APPLICATIONS . GENERAL PURPOSE SWITCHING DESCRIPTION The MJE802 is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration

Contextual Info: Back to Bipolar Darlington Transistors PNP NPN 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* *also available a JAN, JANTX, JANTXV DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 12 AMPERE . . . designed for general-purpose am plifier and low frequency

darlington pair transistor

Abstract: J 620 610 transistor DARLINGTON ARRAYS darlington pair power transistor darlington pair transistor table ILN2003 darlington power transistor Monolithic Transistor Pair ILN2003A KK2003A
Contextual Info: TECHNICAL DATA HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS The KK2003A are monolithic high-voltage, high-current Darlington transistor arrays. Each consists of seven n-p-n Darlington pairs that feature high-voltage outputs with commoncathode clamp diodes for switching inductive loads. The collectorcurrent rating of a single Darlington pair is 500 mA. The

Contextual Info: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . NPN DARLINGTON . HIGH CURRENT CAPABILITY . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration

uln2003r

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD ULN2003R Preliminary LINEAR INTEGRATED CIRCUIT HIGH VOLTAGE HIGH CURRENT DARLINGTON TRANSISTOR ARRAY  DESCRIPTION The UTC ULN2003R is high-voltage, high-current darlington transistor arrays. Each consists of seven NPN darlington pairs

MJE1090

Contextual Info: MJE1090 PNP Darlington Transistor 26.87 Transistors Darlington Transistors PNP Amer. Page 1 of 1 Enter Your Part # Home Part Number: MJE1090 Online Store MJE1090 Diodes PNP Darlington Transistor Transistors Enter code INTER3 at checkout.* Integrated Circuits

Contextual Info: 2N6294 NPN Darlington Transistor 4.94 Transistors Darlington Transistors NPN Americ. Page 1 of 1 Enter Your Part # Home Part Number: 2N6294 Online Store 2N6294 Diodes NPN Darlington Transistor Transistors Enter code INTER3 at checkout.* Integrated Circuits

2SD1592

Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1592 NPN SILICON TRIPLE DIFFUSED TRANSISTOR DARLINGTON CONNECTION FOR HIGH-VOLTAGE LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • High DC current gain due to Darlington connection • Low collector saturation

2N998

Abstract: NPN POWER DARLINGTON TRANSISTORS
Contextual Info: 2N998 NPN Darlington Transistor 9.00 Transistors Darlington Transistors NPN America. Page 1 of 1 Enter Your Part # Home Part Number: 2N998 Online Store 2N998 Diodes NPN Darlington Transistor Transistors Enter code INTER3 at checkout.* Integrated Circuits

ILN2003AD

Abstract: ILN2003AN darlington pair transistor ILN2003A J 620 610 transistor seven transistor drivers
Contextual Info: TECHNICAL DATA HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS The ILN2003A are monolithic high-voltage, high-current Darlington transistor arrays. Each consists of seven n-p-n Darlington pairs that feature high-voltage outputs with commoncathode clamp diodes for switching inductive loads. The collectorcurrent rating of a single Darlington pair is 500 mA. The

sf.c amplifier

Abstract: CASE TO-101 TDB3003 Transistors sfc2018m sfc 2046 SFC2046EC SFC2790C SFC2790M
Contextual Info: Lin ea r integrated c ircu its - transistors arrays C irc u its in tég rés linéaires - réseau x d e tran sisto rs Type Type Case B o ite r Darlington stage + 2 NPN transistors Etage Darlington + 2 transistors NPN TO-101 S F .C 2036 M Dual Darlington D ouble Darlington

D1485

Abstract: 2SA1720
Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1720 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SA1720 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM

Contextual Info: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed

Contextual Info: SGS-THOMSON SGS125 SILICON PNP POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP DARLINGTON . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION . GENERAL PURPOSE SWITCHING DESCRIPTION The SGS125 is a silicon epitaxial-base PNP transistor in monolithic Darlington configuration in

Contextual Info: Back to Bipolar Darlington Transistors NSG2556 PNP 20 AMPERE PNP SILICON DARLINGTON POWER TRANSISTOR P N P DARLINGTON POWER TRANSISTOR General Purpose Amplifier Low Frequency Switching High DC Current Gain Monolithic Construction Built in Base Emitter Shunt Resistors

Contextual Info: BU806/807 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CRT VIDEO DISPLAYS BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS

2SD418

Abstract: TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,