DARLINGTON NPN 600V Search Results

darlington NPN 600V 12a transistor

Abstract: darlington NPN 600V 20a transistor NPN 600V transistor NPN 600V transistor darlington application MJ10023 NPN Transistor 600V MJ10023 NPN POWER DARLINGTON darlington NPN 600V
Contextual Info: DATA SHEET MJ10023 NPN SILICON POWER DARLINGTON TRANSISTOR JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJ10023 is a Silicon NPN Power Darlington Transistor, mounted in a hermetically sealed metal case, designed for high voltage, high speed, power applications.

darlington NPN 600V 8a transistor

Abstract: npn darlington 400v 10a npn darlington 6A 400V TO218 20A Darlington NTE256 22a ic NPN Transistor 600V npn darlington 400v 1.*a darlington NPN 600V
Contextual Info: NTE256 Silicon NPN Transistor Darlington w/Damper Diode Description: The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output

NPN Transistor 50A 400V

Abstract: NTE99 NPN 400V 40A npn darlington 400v 15a
Contextual Info: NTE99 Silicon NPN Transistor Darlington w/Base–Emitter Speed–up Diode Description: The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. This device is particularly

Contextual Info: FJP9100 FJP9100 High Voltage Power Darlington Transistor • Built-in Resistor at Base-Emitter : R1 Typ. =2000Ω • Built-in Resistor at Base : RB(Typ.)=700 ± 100Ω TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Equivalent Circuit

FJP9100

Abstract: NPN Transistor 600V TO-220
Contextual Info: FJP9100 FJP9100 High Voltage Power Darlington Transistor • Built-in Resistor at Base-Emitter : R1 Typ. =2000Ω • Built-in Resistor at Base : RB(Typ.)=700 ± 100Ω TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Equivalent Circuit

J9100

Contextual Info: FJP9100 FJP9100 High Voltage Power Darlington Transistor • Built-in Resistor at Base-Emitter : R1 Typ. =2000Ω • Built-in Resistor at Base : RB(Typ.)=700 ± 100Ω TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Equivalent Circuit

NPN Transistor 600V 2A

Abstract: 250V transistor npn 2a BU810 NPN 600V transistor darlington 400V voltage regulator darlington power transistor high voltage high frequency switching npn transistor 400V NPN Transistor 600V NPN Transistor 600V 0,2A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 400V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in high frequency and efficency converters,

2SD1166

Abstract: darlington NPN 600V 8a
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1166 HIGH POWER SWITCHING APPLICATION. AC & MOTOR CONTROL APPLICATION. INVERTER APPLICATION. FEATURES: . High Voltage : VcE SUS >900V . Triple Diffused Design . Darlington Design MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC

ST100Q22

Abstract: ST100Q
Contextual Info: ST100Q22 SILICON NPN TRIPLE DIFFUSED MESA TYPE TENTATIVE DATA INDUSTRIAL APPLICATION Unit in mm HIGH POWER SWITCHING. DC-AC POWER INVERTER. MOTOR CONTROL APPLICATION. FEATURES : . High Voltage : VCEX SUS >1200V . Triple Diffused Design . Darlington Design

Contextual Info: ÌMf| ACHTES0 0□ Q7fi4b 0 | TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO SILICON NPN TRIPLE DIFFUSED MESA TYPE _ (DARLINGTON POWER)_ INDUSTRIAL APPLICATION Unit in mm HIGH POWER SWITCHING APPLICATIONS. DC-AC POWER INVERTER APPLICATIONS.

MG20G6EL2

Contextual Info: MG20G6EL2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diodes.

MG50G6EL1

Abstract: darlington NPN 600V 50a transistor NPN transistor Ic 50A mg50g6el
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50G6EL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diodes.

TFD120

Abstract: TFD-120 TFD200 850g powerline npn darlington 40A
Contextual Info: DTD/TFD120/200 DTD/TFD120/200 Superswitch Powerline NPN Darlington Transistor Replaces November 1999 version, DS5265-2.0 DS5265-3.0 September 2000 APPLICATIONS • High frequency inverters ■ Power supplies ■ Aircraft power supplies ■ Motor controls KEY PARAMETERS

ST200Q22

Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE ST200Q22 TENTATIVE DATA INDUSTRIAL APPLICATION Unit In ram HIGH POWER SWITCHING. DC-AC POWER INVERTER. MOTOR CONTROL APPLICATION. 2 -JZÍ4.0ÍQ2 FEATURES: . High Voltage : VcEX SUS >1200V . Triple Diffused Design . Darlington Design

darlington NPN 600V 20a transistor

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 6 IN 1} MP6005 ° HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS ° MOTOR CONTROL APPLICATIONS. • Package with Heat Sink Isolated to Lead. • High Collector Power Dissipation. (SIP 14 Pin

2SD1409

Abstract: 2sd1409 toshiba
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD1409 INDUSTRIAL APPLICATIONS Unit in mm IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. lQkSUAX. FEATURES: . High DC Current Gain : hFE=600(Min.) (VCE=2V, Ic = 2A) . Monolithic Construction with Built-In Base-Emitter

MG50G1BL2

Abstract: mg50g1b mg50g1bl MG50G1
Contextual Info: lb ^FlìDìvaso DQOflsm i TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO MG50G1BL2 _ 5bC 08214 SILICON NPN TRIPLE D IFFUSED TYPE (DARLINGTON POWER MODULE) HIGH POWER SWITCHING APPLICATIONS. Unit in mm FEATURES: . The Collector is Isolated from Ground,

TRANSISTOR ARRAY

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 6 IN 1 MP6003 APPLICATIONS. O HIGH POWER SWITCHING INDUSTRIAL APPLICATIONS Unit in mm o MOTOR CONTROL APPLICATIONS. 58±l • Package with Heat Sink Isolated to Lead. • High Collector Power Dissipation.

NTE2540

Abstract: 600V NPN 2A
Contextual Info: NTE2540 Silicon NPN Transistor Darlington, High Voltage Switch Features: D High DC Current Gain: hFE = 600 Min VCE = 2V, IC = 2A D Monolithic Construction w/Built–In Base–Emitter Shunt Resistor Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

2SD798

Abstract: toshiba l500
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD798 INDUSTRIAL APPLICATIONS. Unit in mm IGNITER APPLICATIONS. 10.3MAX. HIGH VOLTAGE SWITCHING APPLICATIONS. £Í3.6±Q.2 - FEATURES: • High DC Current Gain : h FE=1500 (Min.) (Vc e =2V, I c =2A)

MG75G6

Abstract: mg75g6el1
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75G6EL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector Is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . High DC Current Gain

lf7a

Contextual Info: MP6004 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 6 IN 1 O HIGH POWER SWITCHING APPLICATIONS, INDUSTRIAL APPLICATIONS o MOTOR CONTROL APPLICATIONS. • Package with Heat Sink Isolated to Lead. • High Collector Power Dissipation. : P t = 1 20W

2SD1409A equivalent

Abstract: 2SD1409A
Contextual Info: TO SHIBA IGNITER APPLICATIONS. 2SD1409A SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER HIGH VOLTAGE SWITCHING APPLICATIONS. • • High DC Current Gain : hpE = 600 (Min.) (V0 e = 2V, Ic = 2A) Monolithic Construction with Built-In Base-Emitter Shunt

MG75H6EL1

Contextual Info: MG75H6EL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . High DC Current Gain