DALLAS APPLICATION NOTE 88 Search Results

CRC-16 ccitt

Abstract: transistor 016h AB01X Hexing Test Dallas iButton DS1990A Dallas Semiconductor exor 001H 041H CRC 103
Contextual Info: APPLICATION NOTE 27 Application Note 27 Understanding and Using Cyclic Redundancy Checks with Dallas Semiconductor iButtonTM Products INTRODUCTION The Dallas Semiconductor iButton products are a family of devices that all communicate over a single wire following a specific command sequence referred to as the

DS3151

Abstract: DS3152 DS3153 DS3153DK DS3154 DS3154DK APP2877 DS2153DK
Contextual Info: Maxim/Dallas > App Notes > TELECOM Keywords: pulse template, termination, network, DS3154DK, DS2153DK, DS315X, DS3151, DS3152, DS3153, DS3154, termination network, pulse Nov 25, 2003 APPLICATION NOTE 2877 Modifying the pulse shape of DS315x using Test Registers

16c57

Abstract: AN586 PIC16C54 PIC16C57 PIC16C5X PIC16C64 PIC16C71 PIC16CXX AN581 M00234
Contextual Info: AN586 Macros for Page and Bank Switching Author: Mark Palmer Microchip Technology Inc. Contributions: Mike Morse Sr. Field Applications Engineer Dallas INTRODUCTION This application note discusses the use of the MPASM assembler's conditional assembly to automatically

uart 8250

Abstract: TX485 uart 8051 protocol rs-485 CAT25C64 DS89C420 MAX3088 X-TAL OSC 16.0000 8250 uart rxd
Contextual Info: Application Note 600 DS89C420 Hardware Enhancements Increase Serial Port Flexibility and Performance www.maxim-ic.com OVERVIEW The DS89C420 marks Dallas’ first product offering in its Ultra High-Speed Microcontroller family. In contrast to the original 8051 architecture that required a minimum of 12 clocks per instruction cycle, the

Contextual Info: TLC3704ĆQ1 QUAD MICROPOWER LinCMOS VOLTAGE COMPARATORS SGLS191A − JUNE 2004 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 2000 V Per D D D D D D PACKAGE TOP VIEW MIL-STD-883, Method 3015; Exceeds 50 V Using Machine Model (C = 200 pF, R = 0)

C393Q1

Abstract: LM393 TLC3702 TLC393 TLC393Q TLC393-Q1 TLC393QDRQ1
Contextual Info: TLC393-Q1 DUAL MICROPOWER LinCMOS VOLTAGE COMPARATOR SGLS198A − SEPTEMBER 2004 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 500 V Per D D D D OR PW PACKAGE TOP VIEW MIL-STD-883, Method 3015; Exceeds 50 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: TLC393-Q1 DUAL MICROPOWER LinCMOS VOLTAGE COMPARATOR SGLS198A − SEPTEMBER 2004 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 500 V Per D D D D OR PW PACKAGE TOP VIEW MIL-STD-883, Method 3015; Exceeds 50 V Using Machine Model (C = 200 pF, R = 0)

sn75603

Abstract: SN75604 C393Q1 TLC393QPWRQ1 TLC393QDRQ1 lm393 application LM393 TLC274CN TLC3702 TLC393
Contextual Info: TLC393ĆQ1 DUAL MICROPOWER LinCMOS VOLTAGE COMPARATOR SGLS198A − SEPTEMBER 2004 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 500 V Per D D D D OR PW PACKAGE TOP VIEW MIL-STD-883, Method 3015; Exceeds 50 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: TLC3704ĆQ1 QUAD MICROPOWER LinCMOS VOLTAGE COMPARATORS SGLS191A − JUNE 2004 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 2000 V Per D D D D D D PACKAGE TOP VIEW MIL-STD-883, Method 3015; Exceeds 50 V Using Machine Model (C = 200 pF, R = 0)

apr 8910

Contextual Info: SN74ALVC32 QUADRUPLE 2-INPUT POSITIVE-OR GATE SCES108E – JULY 1997 – REVISED MARCH 2000 D D D D EPIC  Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

LVDM050Q

Abstract: LVDM051Q SN65LVDM050 SN65LVDM050QDQ1 SN65LVDM051 SN65LVDM051QDQ1
Contextual Info: SN65LVDM050ĆQ1, SN65LVDM051ĆQ1 HIGHĆSPEED DIFFERENTIAL LINE DRIVERS AND RECEIVERS SGLS128A − JULY 2002 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 2000 V Per D D D D D D D D D D D MIL-STD-883, Method 3015; Exceeds 200 V

Contextual Info: SN65LVDM050ĆQ1, SN65LVDM051ĆQ1 HIGHĆSPEED DIFFERENTIAL LINE DRIVERS AND RECEIVERS SGLS128A − JULY 2002 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 2000 V Per D D D D D D D D D D D MIL-STD-883, Method 3015; Exceeds 200 V

Contextual Info: SN54LVC86A, SN74LVC86A QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES SCAS288I – JANUARY 1993 – REVISED OCTOBER 1998 D D D D D D EPIC  Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V

Contextual Info: TPS71H01ĆQ1, TPS71H33ĆQ1, TPS71H48ĆQ1, TPS71H50ĆQ1 LOWĆDROPOUT VOLTAGE REGULATORS SGLS220A − DECEMBER 2003 − REVISED MAY 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 2000 V Per D D D D D D D D D MIL-STD-883, Method 3015; Exceeds 200 V

Contextual Info: SN74ALVC125 QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS SCES110D – JULY 1997 – REVISED DECEMBER 1998 D D D D EPIC  Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: SN74ALVC244 OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS SCES188 – FEBRUARY 1999 D D D D EPIC  Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: SN74ALVC126 QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS SCES111E – JULY 1997 – REVISED FEBRUARY 1999 D D D D EPIC  Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: SN54LVC04A, SN74LVC04A HEX INVERTERS SCAS281I – JANUARY 1993 – REVISED OCTOBER 1998 D D D D D D EPIC  Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: SN54LVC00A, SN74LVC00A QUADRUPLE 2-INPUT POSITIVE-NAND GATES SCAS279G – JANUARY 1993 – REVISED JUNE 1998 D D D D D D EPIC  Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V

Contextual Info: SN54LVC04A, SN74LVC04A HEX INVERTERS SCAS281I – JANUARY 1993 – REVISED OCTOBER 1998 D D D D D D EPIC  Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: SN54LVC32A, SN74LVC32A QUADRUPLE 2-INPUT POSITIVE-OR GATES SCAS286H – JANUARY 1993 – REVISED JUNE 1998 D D D D D D EPIC  Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V

Contextual Info: SN54LVC08A, SN74LVC08A QUADRUPLE 2-INPUT POSITIVE-AND GATES SCAS283G – JANUARY 1993 – REVISED JUNE 1998 D D D D D D EPIC  Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V

Contextual Info: SN74ALVC14 HEX SCHMITT-TRIGGER INVERTER SCES107E – JULY 1997 – REVISED AUGUST 1999 D D D D EPIC  Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: SN54LVC86A, SN74LVC86A QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES SCAS288I – JANUARY 1993 – REVISED OCTOBER 1998 D D D D D D EPIC  Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V