DA52 Search Results

digital piezoresistive pressure sensor automotive

Abstract: cuznpb consumer LOW PRESSURE SENSOR 52XX DA52XX-AZ atmospheric pressure sensor circuit MEDICAL PRESSURE die piezoresistive "Pressure Sensor" digital output MS52XX-YZ Micronas Semiconductor
Contextual Info: DA52XX-AZ.001 June 18, 1996 MS52XX-AZ SMD PRESSURE SENSOR • 1 and 7 bar ranges 100 and 700 kPa • Absolute pressure sensors DESCRIPTION Piezoresistive, absolute silicon pressure sensor. FEATURES • • • 1 and 7 bar ranges Low cost High sensitivity

Micronas Semiconductor

Abstract: consumer LOW PRESSURE SENSOR humidity sensor smd MEDICAL PRESSURE die pressure sensor 0 to 10 bar 52XX MS52XX-YZ piezoresistive gel sensor humidity Pressure Sensor
Contextual Info: DA52XX-BZ.001 June 18, 1996 MS52XX-BZ SMD PRESSURE SENSOR • 1, 2, 4, 7 and 12 bar ranges 100, 200, 400, 700 and 1200 kPa • Absolute pressure sensors DESCRIPTION Piezoresistive, absolute silicon pressure sensor. FEATURES • • • 1, 2, 4, 7 and 12 bar ranges

DC52-11GWA

Abstract: DC52-11 da52 DA52-11EWA DC52-11YWA DC52-11EWA DA52-11
Contextual Info: Kingbright 13.2mm Q.52INCH DUAL DIGIT NUMERIC DISPLAYS DA52-11 DC52-11 Features Description •0.52 INCH DIGIT HEIGHT •LO W CURRENT OPERATION. •EXCELLENT CHARACTER APPEARANCE. The Bright Red source color devices are made with Gallium Phosphide Red Light Emitting Diode.

TDA72xx

Abstract: TDA52xx tda720x MIPI bridge infrared receiver agc C166 RSSI mixer AGC automatic gain control agc TDA72 automatic gain control
Contextual Info: Automatic Gain Control AGC Optimal Usage of the Automatic Gain Control Circuit DA52 0 x, TDA5 21 x, T DA522 x, TDA72 0 x and TDA7 21 x ASK and ASK/FSK Superheterodyne Receivers (SHR) for the sub 1 GHz frequency bands Applic atio n Note 1.0, 2009-09-21 Wirel ess Con trol

a109d

Contextual Info: Da ta S heet, Versio n 1.7, 2 007-02-26 T DA5250 D2 ASK/FSK 868MHz Wireless Transceiver Wireless Components N e v e r s t o p t h i n k i n g . Edition 2007-02-26 Published by Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany Infineon Technologies AG 3/7/07.

TDA5200

Abstract: SP000016381 TDA5201 sp000012902 a1105 TDA5101 Q67030-A1102 Q67030-A1104 434 mhz oscillator PG-TSSOP-28
Contextual Info: Pr oduc t Br ief T DA52 0x S e ri es ASK Re ce iver Family W i r e l e s s C o n t r o l – T h e T D A 5 2 0 x s e r i e s is a family of very low power single chip ASK receivers for the frequency bands 308 – 312 MHz, 343 – 347 MHz, 433 – 435 MHz, and 868 – 870 MHz.

DC52-11GWA

Abstract: DA52-11EWA DA52-11GWA da52 DC52-11EWA DA52-11HWA DC52-11 DA52-11YWA DA52-11SRWA DA52-11
Contextual Info: Kingbright 13.2mm 0.52INCH DUAL DIGIT NUMERIC DISPLAYS DA52-11 DC52-11 Features Description l0.52 The Bright Red source color devices are made with Gallium INCH DIGIT HEIGHT lLOW CURRENT OPERATION. lEXCELLENT CHARACTER APPEARANCE. lEASY MOUNTING ON P.C. BOARDS OR SOCKETS.

M44C260

Abstract: ultrasonic transmitter and receiver Mhz Transmitter with SAW-based Oscillator da5276 RF Transmitter receiver ICs u2535b ir remote decoder IC ir remote transmitter and receiver circuit RF encoder used in transmitter S852T
Contextual Info: T em ig S e m i c o n d u c t o r s Remote Control The U431xB IC family is designed to realize a lowcurrent UHF remote control system. This system is flexible with regard to amplitude or frequency modula­ tion, different transmission coding and a wide range of

hyundai rdram

Abstract: REF05
Contextual Info: HYRDU64164 / HYRDU72184 Series 64/72Mbit Direct RDRAM • HYUNDAI Advanced Information O verview The Direct Rambus™ DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and

K d998 transistor

Abstract: lz 02 1068 D844 voltage regulator
Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

da53

Abstract: HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845
Contextual Info: Direct RDRAM 128/144Mbit 256Kx16/18x32s Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and

da53

Abstract: uPD488385FB-C60-53-BF1 uPD488385FB-C80-40-BF1 uPD488385FB-C80-45-BF1 uPD488385FB-C80-50-BF1
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD488385 72 M-bit 256K x 18 x 16d Direct Rambus DRAM Description The Direct Rambus DRAM (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where

direct rdram rambus 1200

Contextual Info: 800/1066/1200 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high

da53

Abstract: DB26 0195c Outline T39
Contextual Info: 1066 MHz RDRAMâ 256/288 Mb 512Kx16/18x32s Advance Information Overview • The Rambusâ DRAM (RDRAMâ) device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other

Contextual Info: TOSHIBA TENTATIVE TC59R7218XB TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The Direct Rambus DRAM Direct RDRAMTM ¡s a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video,

dtx 360 transistor

Abstract: ALP 101 modulator MAS9191A TQFP64 15HEX 8001FF transistor dtx 360
Contextual Info: DA9191A.000 July 31, 1997 MAS9191A Single Chip AMPS/ETACS/NAMPS Audio/Data Processor • • • • Single chip solution for all audio and data processing Low power consumption with several power down modes SAT decoding and transponding circuitry Simple 4-wire serial interface

Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

Contextual Info: Direct RDRAM RAMBUS ADVANCE INFORMATION TM 128/144-Mbit 256Kx16/18x32s O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT ¿¿PD488448, 488488 128/144 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including com puter memory, graphics, video, and any other application where

HYB25M144180C-653

Abstract: HYB25R128160C-653 HYB25R128160C-745 HYB25R128160C-840 HYB25R128160C-845 HYB25R144180C-653 HYB25R144180C-745 HYB25R144180C-840 HYB25R144180C-845 Direct rdram
Contextual Info: Direct RDRAM 128/144-MBit 256Kx16/18×32s Overview The Rambus Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.

ultrasonic movement DETECTOR CIRCUIT DIAGRAM

Abstract: ultrasonic transducers 48V Manchester CODING DECODING FPGA vhdl code for digit serial fir filter vhdl DTMF lcd hall effect sensor voltage offset cancellation vhdl manchester DA5209/ 2N3019 200khz ultrasonic transducers
Contextual Info: ASIC Cells Dialog Semiconductor Application Configurable System Cells Description Application Configurable System Cells ACSCs , have been developed by Dialog Semiconductor for specific market segments. The System Cells consist of primary groups of function

diode t29

Abstract: EDR2518ABSE EDR2518ABSE-8C-E T45 to DB9 EDR2518ABSE-8C EDR2518ABSE-AD EDR2518ABSE-AE EDR2518ABSE-AE-E EDR2518ABSE-AEP EDR2518ABSE-AEP-E
Contextual Info: PRELIMINARY DATA SHEET 288M bits Direct Rambus  DRAM EDR2518ABSE 512K words x 18 bits × 32s banks Description Features The EDR2518AB (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including

da53

Abstract: DB26 BE1210 DB62 ROP10
Contextual Info: RAMBUS Direct RDRAM Preliminary Information 256/288-Mbit 512Kx16/18x32s Overview The Rambus Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application

da53

Abstract: DB26 DL010
Contextual Info: RAMBUS Direct RDRAM Preliminary Information 256/288-Mbit 1Mx16/18x16d Overview The Rambus Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application