05CLG
Abstract: marking d9n AN569 D9N05CL NID9N05CL NID9N05CLG NID9N05CLT4 NID9N05CLT4G D9N05
Contextual Info: D9N05CL Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped RDS(ON) TYP ID MAX (Limited)
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NID9N05CL
NID9N05CL/D
05CLG
marking d9n
AN569
D9N05CL
NID9N05CL
NID9N05CLG
NID9N05CLT4
NID9N05CLT4G
D9N05
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d9n05cl
Abstract: AN569 NID9N05CL NID9N05CLT4
Contextual Info: D9N05CL Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a DPAK Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • • • • • Diode Clamp Between Gate and Source
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NID9N05CL
NID9N05CL/D
d9n05cl
AN569
NID9N05CL
NID9N05CLT4
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05CLG
Abstract: D9N05CLG D9N05 D9N05CL d9n diode DSA00284377 AN569 NID9N05CL NID9N05CLG NID9N05CLT4
Contextual Info: D9N05CL Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped RDS(ON) TYP ID MAX (Limited)
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Original
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NID9N05CL
NID9N05CL/D
05CLG
D9N05CLG
D9N05
D9N05CL
d9n diode
DSA00284377
AN569
NID9N05CL
NID9N05CLG
NID9N05CLT4
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d9n05cl
Abstract: A 0412 MOSFET gate to drain clamp 369A-13 AN569 NID9N05CL NID9N05CLT4 mosfet transistor 400 volts.100 amperes D9N05
Contextual Info: D9N05CL Power MOSFET 9 Amps, 52 Volts N-Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a DPAK Package http://onsemi.com Benefits 9 AMPERES 52 V CLAMPED RDS on = 90 mW (Typ.) • High Energy Capability for Inductive Loads • Low Switching Noise Generation
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NID9N05CL
NID9N05CL/D
d9n05cl
A 0412 MOSFET
gate to drain clamp
369A-13
AN569
NID9N05CL
NID9N05CLT4
mosfet transistor 400 volts.100 amperes
D9N05
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PDF
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D9N05
Abstract: D9N05CL
Contextual Info: D9N05CL Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a DPAK Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • • • • • Diode Clamp Between Gate and Source
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Original
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NID9N05CL
D9N05
D9N05CL
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PDF
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D9N05
Abstract: D9N05CL
Contextual Info: D9N05CL Power MOSFET 9 Amps, 52 Volts N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a DPAK Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped RDS(ON) TYP ID MAX
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Original
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NID9N05CL
NID9N05CL/D
D9N05
D9N05CL
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PDF
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