D9N DIODE Search Results

DIODE A7N

Abstract: A7N transistor DIODE B4N d9n diode transistor a7n EBGA240 b7n diode DIODE A4N DIODE B3N AT84CS001TP-EB
Contextual Info: Features • • • • • • • • • • • • • • High-speed ADC Family Companion Chip Selectable 1:2 or 1:4 DMUX Ratio Power Consumption: 2.6W LVDS Compatible Differential Data and Clock Inputs 100Ω Terminated LVDS Compatible Differential Data and Data Ready Outputs

EV10AS150

Abstract: diode t25 4 A8 EBGA317 EV10AS150TP-EB EVX10AS150TP 10 GSPS ADC FR4 diode t25 4 A9
Contextual Info: EV10AS150 High Linearity ADC 10-bit 2.5 Gsps with 1:4 DMUX 4.5 GHz Full Power Bandwidth Datasheet Summary Main Features • ADC 10-bit Resolution • Up to 2.5 Gsps Sampling Rate • Selectable 1:4 or 1:2 Demultiplexed Digital LVDS Outputs Performance • Single Tone Performance in 1st Nyquist –1 dBFS

AT84AS003

Abstract: 2600 corning bsc physics books AT84AS003CTP AT84AS003TP-EB AT84AS003VTP AT84XAS003TP
Contextual Info: Features • • • • • • • 10-bit Resolution 1.5 Gsps Sampling Rate Selectable 1:2 or 1:4 Demultiplexed Output 500 mVpp Differential 100Ω or Single-ended 50Ω Analog Input 100Ω Differential or Single-ended 50Ω Clock input LVDS Output Compatibility

AT84AS004

Abstract: AT84AS004CTP AT84AS004TP-EB 10 GSPS ADC FR4 AT84AS004VTP AT84AS003 ATMEL Package drawing EBGA317 5431AS
Contextual Info: Features • • • • • • • • 10-bit Resolution 2 Gsps Sampling Rate Fully Compatible with AT84AS003 10-bit 1.5 Gsps ADC with DMUX Selectable 1:2 or 1:4 Demultiplexed Output 500 mVpp Differential 100Ω or Single-ended 50Ω Analog Input 100Ω Differential or Single-ended 50Ω Clock input

DIODE A7N

Abstract: 004B AT84AS003 0812D DIODE F22 diode t25 4 d9 AT84AS004CTP DIODE B3N transistor a7n AT84AS003CTP
Contextual Info: Replacing AT84AS003/004 ADC with AT84AS003/004B ADC Application Note 1. Introduction This application note aims at providing you with a comparison and recommendations to migrate from the existing AT84AS003/004 to the AT84AS003/004B. It first compares the two versions including:

AT84AS004CTP

Abstract: diode t25 4 d9 AT84AS004VTP diode t25 4 B9 DIODE A7N a6n 100 E20 L27 b7n diode transformer e19 transistor a7n
Contextual Info: Replacing AT84AS003/004 ADC with AT84AS003/004B ADC 1. Introduction This application note aims at providing you with a comparison and recommendations to migrate from the existing AT84AS003/004 to the AT84AS003/004B. It first compares the two versions including:

D10N diode

Abstract: D13N TECHNICAL DATA d9n diode d9n zener r2r resistor ladder TX-2-5-1 TC2411 TC2411-IB TC2411-KIT TP33
Contextual Info: Datasheet Advance Information TC2411 14-Bit, 1 GSPS Digital-to-Analog Converter with Standby Mode of Operation The TC2411 is a 14-bit, 1 GSPS digital-to-analog converter that delivers exceptional high-frequency performance. The TC2411 is designed to support

AT84CS001

Abstract: DIODE A7N transistor a7n AT84AS008 TS81102G0 TS83102G0B TS8388B diode b17 5413B atmel tbga
Contextual Info: Replacing Atmel’s TS81102G0 DMUX with Atmel’s AT84CS001 LVDS DMUX 1. Introduction With the increasing demand for low-power devices, Atmel is introducing a new demultiplexer intended as a companion chip for its high-speed ADCs TS8388B 8-bit 1 Gsps, TS83102G0B 10-bit 2 Gsps and AT84AS008 10-bit 2.2 Gsps ADCs .

EV10AS150A

Abstract: EV10AS150 BDC 47 transistor EV10AS150AVTPY
Contextual Info: EV10AS150A High Linearity ADC 10-bit 2.5 Gsps with 1:4 DMUX 5 GHz Full Power Bandwidth Datasheet Features • • • • • • • • • • • • • ADC 10-bit Resolution Up to 2.5 Gsps Sampling Rate Selectable 1:4 or 1:2 Demultiplexed Digital LVDS Outputs

EV10AS150

Abstract: 1Vp55 EV10AS150A 3-D Matrix Europe SAS
Contextual Info: EV10AS150A High Linearity ADC 10-bit 2.5 Gsps with 1:4 DMUX 5 GHz Full Power Bandwidth Datasheet Features • • • • • • • • • • • • • ADC 10-bit Resolution Up to 2.5 Gsps Sampling Rate Selectable 1:4 or 1:2 Demultiplexed Digital LVDS Outputs

Contextual Info: User's Guide SLAU236A – November 2007 – Revised October 2008 DAC5681/81z/82z EVM 1 2 3 4 5 6 7 Contents Overview . 3 1.1 Purpose . 3

AT84AS004

Abstract: npn transistor w27 AT84AS004CTP DIODE A7N AT84AS004VTP AT84AS004TP-EB AOR 3000 AT84AS004-EB transistor a7n A7N transistor
Contextual Info: Features • • • • • • • 10-bit Resolution 2 Gsps Sampling Rate Selectable 1:2 or 1:4 Demultiplexed Output 500 mVpp Differential 100Ω or Single-ended 50Ω Analog Input 100Ω Differential or Single-ended 50Ω Clock Input LVDS Output Compatibility

AT84AS001VTPY

Abstract: AT84AS001 AT84AS001CTPY AT84XAS001TP AT84AS001TP-EB D10N diode
Contextual Info: Features • • • • • • • • 12-bit Resolution 500 Msps Sampling Rate Full Power Input Bandwidth –3 dB > 1.5 GHz 1.1 Vpp Analog Input (Differential Only) AC or DC Coupled Analog Input with External Control Differential 100Ω or Single-ended 50Ω PECL/LVDS Compatible Clock Inputs

npn transistor w27

Abstract: AT84AS003 transistor a7n NF 840 AT84AS003VTP DIODE A7N AT84AS003-EB K27 npn AT84AS003CTP AT84AS004
Contextual Info: Features • • • • • • • 10-bit Resolution 1.5 Gsps Sampling Rate Selectable 1:2 or 1:4 Demultiplexed Output 500 mVpp Differential 100Ω or Single-ended 50Ω Analog Input 100Ω Differential or Single-ended 50Ω Clock Input LVDS Output Compatibility

AT84AS004

Abstract: npn transistor w27 AT84AS004VTPY
Contextual Info: AT84AS004 10-bit 2 Gsps ADC With1:4 DMUX Datasheet Features • • • • • • • 10-bit Resolution 2 Gsps Sampling Rate Selectable 1:2 or 1:4 Demultiplexed Output 500 mVpp Differential 100Ω or Single-ended 50Ω Analog Input 100Ω Differential or Single-ended 50Ω Clock Input

Contextual Info: NID9N05CL, NID9N05ACL Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped RDS(ON) TYP

Marking D9N

Abstract: NID9N05ACL A 673 C2 transistor NID9N05ACLT4G 05AC NID9N05CLG
Contextual Info: NID9N05CL, NID9N05ACL Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped RDS(ON) TYP

EV10AQ190

Abstract: Marking D9N EBGA380 DIODE B4N marking aa5 transistor marking c3n EV10AQ190TPY-EB EVX10AQ190TPY
Contextual Info: EV10AQ190 Low power QUAD 10-bit 1.25 Gsps ADC Datasheet Summary Main Features • Quad ADC with 10-bit Resolution using True e2v Single Core Technology • • • • • • • • • • – 1.25 Gsps Sampling Rate in Four-channel Mode – 2.5 Gsps Sampling Rate in Two-channel Mode

AT84AS004

Abstract: AT84AS004VTPY AT8AS004 AT84AS004TP-EB
Contextual Info: AT84AS004 10-bit 2 Gsps ADC With1:4 DMUX Datasheet Features • • • • • • • 10-bit Resolution 2 Gsps Sampling Rate Selectable 1:2 or 1:4 Demultiplexed Output 500 mVpp Differential 100Ω or Single-ended 50Ω Analog Input 100Ω Differential or Single-ended 50Ω Clock Input

05CLG

Abstract: marking d9n AN569 D9N05CL NID9N05CL NID9N05CLG NID9N05CLT4 NID9N05CLT4G D9N05
Contextual Info: NID9N05CL Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped RDS(ON) TYP ID MAX (Limited)

05CLG

Abstract: D9N05CLG D9N05 D9N05CL d9n diode DSA00284377 AN569 NID9N05CL NID9N05CLG NID9N05CLT4
Contextual Info: NID9N05CL Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped RDS(ON) TYP ID MAX (Limited)

D10N diode

Abstract: L1812 L1210 AD9780BCPZ D04P AD9783 BAV99ZXCT Motorola D8N ADL5370 AVDD33
Contextual Info: 正誤表 この製品のデータシートに間違いがありましたのでお詫びして訂正いたします。 この正誤表は、2009 年 10 月 27 日現在、アナログ・デバイセズ株式会社で確認した誤りを 記したものです。

Motorola D8N

Abstract: AD9781BCPZRL7
Contextual Info: Dual 12-/14-/16-Bit, LVDS Interface 600 MSPS DACs AD9780/AD9781/AD9783 Preliminary Technical Data FEATURES GENERAL DESCRIPTION High dynamic range, dual DAC parts Low noise and intermodulation distortion Single carrier WCDMA ACLR = 80 dBc @ 61.44 MHz IF Innovative switching output stage permits useable outputs

2n2222 sot23

Abstract: g28 SOT23 j141c W17 sot23 j167 blm41pg471sn1l Transistor J182 J119 c495 C538
Contextual Info: LatticeSC Communications Platform Evaluation Board: LFSC25E-H-EV User’s Guide April 2007 Revision: ebug16_01.3 Lattice Semiconductor LatticeSC Communications Platform Evaluation Board: LFSC25E-H-EV User’s Guide Introduction This user’s guide describes the LatticeSC Communications Platform Evaluation Board featuring the LatticeSC 900fpBGA FPGA device. The stand-alone evaluation PCB provides a functional platform for development and rapid