D991 Search Results

DD 127 D TRANSISTOR

Contextual Info: STU/D9916L SamHop Microelectronics Corp. Preliminary Mar.25 2004 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 30@ VGS = 10V 30V TO-252 and TO-251 Package.

Contextual Info: S DU/D9916 S amHop Microelectronics C orp. Augus t , 2002 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) TYP R ugged and reliable. 25 @ V G S = 4.5V

TL510

Abstract: TL510M TL710 D991 RS-50 TL510C
Contextual Info: T Y P E S T L 5 1 0 M , T L5 1 0 C D IFFERENTIAL C O M P A R A T O R S WITH STROBE LINEAR INTEGRATED CIRCUITS D991, M A R C H 1 9 7 1 - R E V IS E D N O V EM BER 1983 • Low Offset Characteristics J G OR P DUAL-IN LIN E P A C K A G E High Differential Voltage Amplification

Contextual Info: Green Product STU/D9916L S a mHop Microelectronics C orp. Ver 1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID Rugged and reliable. 25 @ VGS=10V

Contextual Info: S T U/D9916L Green Product S amHop Microelectronics C orp. Mar.25 2004 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ө) Max R ugged and reliable.

Contextual Info: 3M Electrically Conductive Connector Covers Properties Material Properties Property Test Method Typical Value Resistivity ASTM D991 <105 ohm-cm Contact Corrosivity Kovar plate FTM 101C Method 3005 Pass Crayoning 3M Not visible Elongation ASTM D638 25%

Contextual Info: STU/D9916L SamHop Microelectronics Corp. OCT. 29 v1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS 30V ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 32@ VGS = 10V 25A TO-252 and TO-251 Package.

Contextual Info: S DU/D9916 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 30 @ V G S = 4.5V

ASTM-D991

Abstract: ASTM -D1665 astm d991 D3575-D ASTM ASTM B1221M eh16a 101-C D991 D3575-B
Contextual Info: 3M 2803 Electrically Conductive Foam Properties Property Test Method Typical Value Density ASTM D3575-W 4.0 lbs./cu.ft. 64 kg/m³ Volume Resistivity ASTM D991 <104ohm-cm Working Temperature (Recommended) -65°F to 210°F (-54°C to 99°C) Compression Strength

d9916

Abstract: DSA004201
Contextual Info: S DU/D9916 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 30 @ V G S = 4.5V

ce0560

Abstract: lmk107 bj105ka-t smt a 472j BC4-ext 4389A-EYXFDC CE JMK107 0x1009 ricoh year date code Nikkai capacitor 472j
Contextual Info: 22-Feb.-2006 Ver.1.4 TAIYO YUDEN Confidential & Tentative EYSFDCAXW Bluetooth Module EYSFDCAXW RF+Baseband (Class 2 UART) Data Report In case you adopt this module and design some appliance, please ask for the latest specifications from the local sales office.

m5501

Abstract: MS-90376 MS90376 4272-50S 31A-530 427022y 4272-37P 4270-5R 4270-20Y m5501/11-f1
Contextual Info: 3 4270 Series Electrically Conductive Connector Covers Conductive Composite 3M 4270 Series Connector Covers feature a new unique Conductive Composite material. The material is made intrinsically conductive by uniformly distributing a conductive matrix of fibers during

transistor smd code marking 420

Abstract: 40CTQ150-1 40CTQ150S EIA-481A SMD-220
Contextual Info: 40CTQ150SPbF/40CTQ150-1PbF Vishay High Power Products Schottky Rectifier FEATURES 40CTQ150-1PbF 40CTQ150SPbF • 175 °C TJ operation Available • Center tap TO-220 package RoHS* • Very low forward voltage drop COMPLIANT • High frequency operation

Contextual Info: 3M Film, Bag and Tubing Properties* Property Thickness  Strength Breaking Factor Puncture  Test Method Typical Value ASTM D2103 4 mil 102 microns ASTM D882 Fed Std 101 10 lbs./in. 8 lbs.   Heat Seal Parameters Temperature Time Pressure 180°F - 25 0°F

8ETH03-1

Abstract: 8ETH03S EIA-481A SMD-220 smd diode code B2
Contextual Info: 8ETH03SPbF/8ETH03-1PbF Vishay High Power Products Hyperfast Rectifier, 8 A FRED PtTM FEATURES • Hyperfast recovery time 8ETH03-1PbF 8ETH03SPbF Available • Low forward voltage drop RoHS* • Low leakage current COMPLIANT • 175 °C operating junction temperature

18TQ

Abstract: 18TQ035 18TQ040 18TQ045 EIA-481A SMD-220 astm d991 D9919
Contextual Info: 18TQ. Vishay High Power Products Schottky Rectifier, 18 A FEATURES • 175 °C TJ operation Base cathode 2 • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

EIA-481A

Abstract: SMD-220 10CTQ150-1 10CTQ150S
Contextual Info: 10CTQ150S/10CTQ150-1 Vishay High Power Products Schottky Rectifier, 2 x 5 A FEATURES 10CTQ150-1 10CTQ150S • 175 °C TJ operation • Center tap configuration • Low forward voltage drop • High frequency operation Base common cathode 2 Base common cathode

Contextual Info: TO -2 20A B BTA140-800 4Q Triac 12 November 2013 Product data sheet 1. General description Planar passivated four quadrant triac in a SOT78 T0-220AB plastic package intended for use in applications requiring high bidirectional transient and blocking voltage

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63D34

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bd1ad

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