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    RR1220P-102-D

    Abstract: D58764 HSF-141C-35
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5150N Rev. 1, 7/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP5150NR1 MRFE6VP5150GNR1 These high ruggedness devices are designed for use in high VSWR


    Original     		mrfe6vp5150nmrfe6vp5150nr1mrfe6vp5150gnr1rr1220p-102-d+2d58764hsf-141c-35 PDF

    HSF-141C-35

    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5150N Rev. 0, 5/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP5150NR1 MRFE6VP5150GNR1 These high ruggedness devices are designed for use in high VSWR


    Original     		mrfe6vp5150nmrfe6vp5150nr1mrfe6vp5150gnr15/2014semiconductor+1hsf-141c-35 PDF