D5764 Search Results

Contextual Info: E2G1059-18-74 O K I Semiconductor This version: Jul. 1998 MSM5716C50/M SM 5718C50/ M D5764802 16M/18Mb 2M x 8/9 & 64Mb (8M x 8) Concurrent RDRAM DESCRIPTION The 1 6 /1 8 /64-M egabit C oncurrent Ram bus DRAMs (RDRAM ) are extrem ely hi'ghVspeed CMOS DRAMs organized as 2M or 8 M w ords by 8 or 9 bits. They are capable of bursting- linlimi ted

c1833

Abstract: d5764
Contextual Info: DIFFUSED T-IOO SOLID STATE LAMPS 5GfiSD4fl 0 Q 0 1 1 Ö Q CHICAGO MINIATURE BRAND C H I C A G O M I N I A T U R E LAUP red ye llo w HIGH EFFICIENCY GREEN HIGH EFFICIENCY RED 4 -Hl'SI 9 6D 0 1 1 8 0 QMD50640 CMD5364X CMD5464X/HLMP-15X3 D5764X/HLMP-130X PACKAGE DIMENSIONS

AR1310

Abstract: AR3010 AR9102 AR1303 ms 25237-327 Telefunken TLX 22 4 G5602 MV55A rca 7646 RCA 7945
Contextual Info: 1080 Johnson Drive Buffalo Grove, IL 60089 708-459-3400 Fax 708-459-2708 _ «OHI C hicago M iniature WHERE INNOVATION COMES TO LIGHT C o m p e titiv e Cross R e fe re n c e Competitor Page

RDRAM SOP

Abstract: rdram clock generator concurrent RDRAM 72 RDRAM concurrent
Contextual Info: E2G1059-28-Y1 O K I Semiconductor M S M 5 7 1 8 C 5 / M P 5 7 Previous version: Jul. 1998 6 4 8 2 ~ 18Mb 2M x 9 & 64Mb (8M x 8) Concurrent RDRAM DESCRIPTION The 18/64-M egabit Concurrent Rambus DRAMs (RDRAM ) are extremely high-speed CMOS DRAMs organized as 2M or 8 M words by 8 or 9 bits. They are capable of bursting unlimited