D575 Search Results
D575 Price and Stock
Samtec Inc DW-18-11-F-D-575 |
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Samtec Inc DW-21-11-L-D-575 |
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Samtec Inc DW-34-11-L-D-575 |
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Samtec Inc DW-47-11-L-D-575 |
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Samtec Inc DW-05-11-F-D-575.100 Flex Stack Flexible Board Stacker .110 Tail |
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D575 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PreliminaryData Sheet D5754T7A R09DS0012EJ0100 Rev.1.00 Dec 22, 2010 SiGe/CMOS Integrated Circuit 4 x 2 IF Switch Matrix with Gain and Tone/Voltage Controller FEATURES • 4 independent IF channels, integral switching to channel input to either channel output |
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pd5754t7ar09ds0012ej0100pd5739t7a28-pin+1 | |
k d718
Abstract: transistor d472 D636 R transistor d669 D718 transistor d718 d718* transistor transistor d613 D674 D666
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lc75878e5878wlc75878w3151-qfp100e+12 | |
bergquist
Abstract: 2500S2
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2500s20bergquist2500s2 | |
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Contextual Info: Gap Pad 1500S30 Highly Conformable,Thermally Conductive, Reinforced “S-Class” Gap Filling Material Features and Benefits TYPICAL PROPERTIES OF GAP PAD 1500S30 • Thermal conductivity: 1.3 W/m-K PROPERTY Color • Highly conformable / low hardness Reinforcement Carrier |
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1500s30e1269d2240 | |
a3000Contextual Info: Gap Pad A3000 Thermally Conductive, Reinforced Gap Filling Material Features and Benefits • Thermal conductivity: 2.6 W/m-K • Fiberglass reinforced for puncture, shear and tear resistance • Reduced tack on one side to aid in application assembly • Electrically isolating |
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a3000e1269 | |
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Contextual Info: Gap Pad 2500S20 Highly Conformable,Thermally Conductive, Reinforced “S-Class” Gap Filling Material Features and Benefits TYPICAL PROPERTIES OF GAP PAD 2500S20 • Thermal conductivity: 2.4 W/m-K PROPERTY Color • Low “S-Class” thermal resistance at |
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2500s20e1269d2240 | |
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Contextual Info: Gap Pad VO Ultimate Ultra Conformability, Robust, Improved Thermal Conductivity, Gap Filling Material Features and Benefits • Thermal conductivity: 1.3 W/m-K • Ultra conformability • Gel-like modulus TYPICAL PROPERTIES OF GAP PAD VO ULTIMATE PROPERTY |
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e1269 | |
C351
Abstract: D149 D150 D2240 D257 D374 D575 D792 ASTM d792 ASTM D2240
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2000s40c351d149d150+7 | |
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Contextual Info: TflexTM 300 Series Thermal Gap Filler Innovative Technology for a Connected World UNIQUE SILICONE GEL OFFERS COMPLIANCY, THERMAL RESISTANCE Tflex 300, at pressures of 50psi, will deflect to over 50% the original thickness. This high rate of compliancy allows the material to “totally blanket” the component, enhancing |
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50psi300-ha15293-00 | |
R5F35L3EKFF
Abstract: R5F35626
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m16c/5lm16c/56rej03b0221-0100m16c/60+4 | |
LEXAN 121r - 21051
Abstract: lexan 121r 21051 u574 Dell 90w-AC adapter B568 B552 ffc B591 12505hs14 BA42-00141A BA41-00497A
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ba31-00024aba39-00474aba39-00493as/80gb+14 | |
ST T4 D560
Abstract: ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4
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yonah667sheet18sheet19sheet20+16 | |
PSMN013-100ESContextual Info: I2P AK PSMN013-100ES N-channel 100V 13.9mΩ standard level MOSFET in I2PAK. Rev. 3 — 29 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, |
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psmn013-100es | |
PSMN013-100PSContextual Info: PSMN013-100PS N-channel 100V 13.9mΩ standard level MOSFET in TO220. 10 August 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and |
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psmn013-100ps | |
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d69ah
Abstract: d718* transistor D56Eh R5F35626 d74c D554 D79f D54Ah d686 D734
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d69ahd718* transistord56ehr5f35626+6 | |
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Contextual Info: Gap Pad HC1000 “Gel-Like” Modulus Gap Filling Material Features and Benefits TYPICAL PROPERTIES OF GAP PAD HC1000 PROPERTY Color • Thermal conductivity: 1.0 W/m-K • Highly conformable, low hardness • “Gel-like” modulus • Fiberglass reinforced for puncture, |
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hc1000e1269 | |
C556AContextual Info: 1234 689A9A9CC96 BC9D6DC 1!"#$%&$5' &$$ 986789ABCCD9A68679AC6CA986D97CC6 EA8CC 1DFA69 9*F6+C 1!"#$%&$5' 56789ABCCD9A68679AC6CA986D97CC6 |
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56789abccd9ef986789abccd9a56789abccd9a56789abccd9123496+7 | |
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Contextual Info: 1234 6BC9D6DC 1 !"#$%#5& %##'9EF912349D9E6DC 56789ABCCD9A68679AC6CA986D97CC6 E9 8CC 1DFA69 9*F6+C 1 !"#$%#5& 56789ABCCD9A68679AC6CA986D97CC6 |
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56789abccd9ef56789abccd9adc9999999c9567809+4 | |
455a5Contextual Info: 1234 689A9A9CC96 BC9D6DC 1!"#$%&'5 &'' 986789ABCCD9A68679AC6CA986D97CC6 E9A8CC 1DFA69*9+F6,C 1!"#$%&'5( 56789ABCCD9A68679AC6CA986D97CC6 |
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56789abccd9ef986789abccd9a56789abccd9a56789abccd9123496+7 | |
M62362
Abstract: 16P2N M62362FP M62362P 1280X3
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OCR Scan |
m62362p/fpm62362p10-bitdg275+6 | |
ASTM d792
Abstract: HC1000 D575 HC100 C351 D149 D150 D2240 D257 D374
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hc1000astm d792d575hc100+6 | |
D5753Contextual Info: PreliminaryData Sheet D5753T7G SiGe/CMOS Integrated Circuit 4 x 2 IF Switch Matrix with Tone/Voltage Controller R09DS0014EJ0100 Rev.1.00 Feb 22, 2011 FEATURES • 4 independent IF channels, integral switching to channel input to either channel output • 4 × 2 switch matrix with integrated switch control - Tone/Voltage |
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pd5753t7g20-pinr09ds0014ej0100d5753 | |
AR1310
Abstract: AR3010 AR9102 AR1303 ms 25237-327 Telefunken TLX 22 4 G5602 MV55A rca 7646 RCA 7945
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OCR Scan |
tly114aqtly118ptly123tly124+15 | |
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Contextual Info: 1232456789A7BCD7EF62 123456789AB 1232456789A7BCD71E6F2 2657725657E6F7BE2 2FEF5 71232456789A7BCD7E6F27627572762F67E7 2232F75F6 CDE28F868F 2A8BB 5D5678762 88B 1232456789A7BCD7EF62 123456789AB |
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1232456789a7bcd7ef6123456789ab1232456789a7bcd71e6f271232456789a7bcd7+4 | |