D575 Search Results
D575 Price and Stock
Analog Devices Inc AD5751ACPZ-REEL7IC INST AMP 1 CIRCUIT 32LFCSP |
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AD5751ACPZ-REEL7 | Cut Tape | 2,590 | 1 |
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AD5751ACPZ-REEL7 | 518 | 1 |
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AD5751ACPZ-REEL7 | 223 |
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Analog Devices Inc AD5758BCPZ-RL7IC DAC 16BIT 32LFCSP |
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AD5758BCPZ-RL7 | Digi-Reel | 1,432 | 1 |
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AD5758BCPZ-RL7 | 5,487 |
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AD5758BCPZ-RL7 | 287 | 1 |
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AD5758BCPZ-RL7 | 1,500 |
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AD5758BCPZ-RL7 | 3,000 |
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AD5758BCPZ-RL7 | 1,500 |
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Crystek Corporation CCHD-575-50-100.000XTAL OSC XO 100.0000MHZ HCMOS |
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CCHD-575-50-100.000 | 722 | 1 |
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CCHD-575-50-100.000 | 7 |
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CCHD-575-50-100.000 | 2 | 1 |
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Analog Devices Inc AD5754BREZIC DAC 16BIT V-OUT 24TSSOP |
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AD5754BREZ | Tube | 434 | 1 |
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AD5754BREZ | 4,114 |
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AD5754BREZ | Bulk | 86 | 1 |
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AD5754BREZ | 87 |
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AD5754BREZ | 62 |
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AD5754BREZ | 725 |
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Analog Devices Inc AD5750-1ACPZIC INST AMP 1 CIRCUIT 32LFCSP |
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AD5750-1ACPZ | Tray | 222 | 1 |
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AD5750-1ACPZ | 46 |
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AD5750-1ACPZ | 290 |
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AD5750-1ACPZ | 111 |
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D575 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PreliminaryData Sheet D5754T7A R09DS0012EJ0100 Rev.1.00 Dec 22, 2010 SiGe/CMOS Integrated Circuit 4 x 2 IF Switch Matrix with Gain and Tone/Voltage Controller FEATURES • 4 independent IF channels, integral switching to channel input to either channel output |
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PD5754T7A R09DS0012EJ0100 PD5739T7A 28-pin 28-pnesas | |
k d718
Abstract: transistor d472 D636 R transistor d669 D718 transistor d718 d718* transistor transistor d613 D674 D666
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LC75878E, 5878W LC75878E LC75878W 3151-QFP100E LC75878E] QFP100E 3181B-SQFP100 LC75878W] k d718 transistor d472 D636 R transistor d669 D718 transistor d718 d718* transistor transistor d613 D674 D666 | |
bergquist
Abstract: 2500S2
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2500S20 2500S20 bergquist 2500S2 | |
Contextual Info: Gap Pad 1500S30 Highly Conformable,Thermally Conductive, Reinforced “S-Class” Gap Filling Material Features and Benefits TYPICAL PROPERTIES OF GAP PAD 1500S30 • Thermal conductivity: 1.3 W/m-K PROPERTY Color • Highly conformable / low hardness Reinforcement Carrier |
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1500S30 E1269 D2240 1500S30 | |
a3000Contextual Info: Gap Pad A3000 Thermally Conductive, Reinforced Gap Filling Material Features and Benefits • Thermal conductivity: 2.6 W/m-K • Fiberglass reinforced for puncture, shear and tear resistance • Reduced tack on one side to aid in application assembly • Electrically isolating |
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A3000 E1269 a3000 | |
Contextual Info: Gap Pad 2500S20 Highly Conformable,Thermally Conductive, Reinforced “S-Class” Gap Filling Material Features and Benefits TYPICAL PROPERTIES OF GAP PAD 2500S20 • Thermal conductivity: 2.4 W/m-K PROPERTY Color • Low “S-Class” thermal resistance at |
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2500S20 E1269 D2240 2500S20 | |
Contextual Info: Gap Pad VO Ultimate Ultra Conformability, Robust, Improved Thermal Conductivity, Gap Filling Material Features and Benefits • Thermal conductivity: 1.3 W/m-K • Ultra conformability • Gel-like modulus TYPICAL PROPERTIES OF GAP PAD VO ULTIMATE PROPERTY |
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E1269 | |
C351
Abstract: D149 D150 D2240 D257 D374 D575 D792 ASTM d792 ASTM D2240
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2000S40 C351 D149 D150 D2240 D257 D374 D575 D792 ASTM d792 ASTM D2240 | |
Contextual Info: TflexTM 300 Series Thermal Gap Filler Innovative Technology for a Connected World UNIQUE SILICONE GEL OFFERS COMPLIANCY, THERMAL RESISTANCE Tflex 300, at pressures of 50psi, will deflect to over 50% the original thickness. This high rate of compliancy allows the material to “totally blanket” the component, enhancing |
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50psi, 300-H A15293-00 | |
R5F35L3EKFF
Abstract: R5F35626
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M16C/5L M16C/56 REJ03B0221-0100 M16C/60 64-pin 80-pin R5F35L3EKFF R5F35626 | |
LEXAN 121r - 21051
Abstract: lexan 121r 21051 u574 Dell 90w-AC adapter B568 B552 ffc B591 12505hs14 BA42-00141A BA41-00497A
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BA31-00024A BA39-00474A BA39-00493A S/80GB WLAN-802 L50000 L35mm L228mm LEXAN 121r - 21051 lexan 121r 21051 u574 Dell 90w-AC adapter B568 B552 ffc B591 12505hs14 BA42-00141A BA41-00497A | |
ST T4 D560
Abstract: ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4
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YONAH667 Sheet18. Sheet19. Sheet20 Sheet24. Sheet25 Sheet29. Sheet30 Sheet32. Sheet33. ST T4 D560 ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4 | |
PSMN013-100ESContextual Info: I2P AK PSMN013-100ES N-channel 100V 13.9mΩ standard level MOSFET in I2PAK. Rev. 3 — 29 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, |
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PSMN013-100ES PSMN013-100ES | |
PSMN013-100PSContextual Info: PSMN013-100PS N-channel 100V 13.9mΩ standard level MOSFET in TO220. 10 August 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and |
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PSMN013-100PS PSMN013-100PS | |
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d69ah
Abstract: d718* transistor D56Eh R5F35626 d74c D554 D79f D54Ah d686 D734
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Contextual Info: Gap Pad HC1000 “Gel-Like” Modulus Gap Filling Material Features and Benefits TYPICAL PROPERTIES OF GAP PAD HC1000 PROPERTY Color • Thermal conductivity: 1.0 W/m-K • Highly conformable, low hardness • “Gel-like” modulus • Fiberglass reinforced for puncture, |
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HC1000 E1269 | |
C556AContextual Info: 1234 689A9A9CC96 BC9D6DC 1!"#$%&$5' &$$ 986789ABCCD9A68679AC6CA986D97CC6 EA8CC 1DFA69 9*F6+C 1!"#$%&$5' 56789ABCCD9A68679AC6CA986D97CC6 |
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56789ABCCD9EF 986789ABCCD9A 56789ABCCD9A 56789ABCCD9123496 ABBCDE45DF 986789A BCA96 98FCA 76CA91 76CA9 C556A | |
Contextual Info: 1234 6BC9D6DC 1 !"#$%#5& %##'9EF912349D9E6DC 56789ABCCD9A68679AC6CA986D97CC6 E9 8CC 1DFA69 9*F6+C 1 !"#$%#5& 56789ABCCD9A68679AC6CA986D97CC6 |
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56789ABCCD9EF 56789ABCCD9A DC9999999 C9567809 /E/09 BCA96 99FCA 76CA91 | |
455a5Contextual Info: 1234 689A9A9CC96 BC9D6DC 1!"#$%&'5 &'' 986789ABCCD9A68679AC6CA986D97CC6 E9A8CC 1DFA69*9+F6,C 1!"#$%&'5( 56789ABCCD9A68679AC6CA986D97CC6 |
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56789ABCCD9EF 986789ABCCD9A 56789ABCCD9A 56789ABCCD9123496 99/E/09 ABBCDE45DF 76CA9 86A9E 918CC C9FACD96 455a5 | |
M62362
Abstract: 16P2N M62362FP M62362P 1280X3
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OCR Scan |
M62362P/FP M62362P 10-bit DG275Ã M62362 b241flEb 14430b 16P2N M62362FP 1280X3 | |
ASTM d792
Abstract: HC1000 D575 HC100 C351 D149 D150 D2240 D257 D374
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HC1000 ASTM d792 HC1000 D575 HC100 C351 D149 D150 D2240 D257 D374 | |
D5753Contextual Info: PreliminaryData Sheet D5753T7G SiGe/CMOS Integrated Circuit 4 x 2 IF Switch Matrix with Tone/Voltage Controller R09DS0014EJ0100 Rev.1.00 Feb 22, 2011 FEATURES • 4 independent IF channels, integral switching to channel input to either channel output • 4 × 2 switch matrix with integrated switch control - Tone/Voltage |
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PD5753T7G 20-pin R09DS0014EJ0100 D5753 | |
AR1310
Abstract: AR3010 AR9102 AR1303 ms 25237-327 Telefunken TLX 22 4 G5602 MV55A rca 7646 RCA 7945
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OCR Scan |
TLY114AQ TLY118P TLY123 TLY124 TLY132 TLY133A TLY134A TLY143 TLY144 AR1310 AR3010 AR9102 AR1303 ms 25237-327 Telefunken TLX 22 4 G5602 MV55A rca 7646 RCA 7945 | |
Contextual Info: 1232456789A7BCD7EF62 123456789AB 1232456789A7BCD71E6F2 2657725657E6F7BE2 2FEF5 71232456789A7BCD7E6F27627572762F67E7 2232F75F6 CDE28F868F 2A8BB 5D5678762 88B 1232456789A7BCD7EF62 123456789AB |
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1232456789A7BCD7EF6 123456789AB 1232456789A7BCD71E6F2 71232456789A7BCD7 CDE28F86 2723D 8D768157" 8638D35457E86 |