D5 DIOD Search Results

DO-34

Abstract: MA723 MA782 ma10701 AMA785 AMA786WK AMA787 AMA791 AMA792 AMA792WA
Contextual Info: Diodes • Schottky Barrier Diodes SBD (For Small Current) (continued) Application (mA) 0.55 15 Mini (3 pins) D10 A M A 791 * 0.55 15 Mini (3 pins) D10 S Mini (3 pins) D5 AM A792 * 30 0.55 15 A M A 792W A *• 30 0.55 15 S Mini (3 pins) D5 A M A 792W K 30

advantage of fm transmitter two stage

Abstract: audio bluetooth transmitter 3.5mm AN277 ESD Diodes Mifare* capacitor inductor epcos mip i mobile 3.5mm jack ESD3V3S
Contextual Info: ES D5 V3 L 1B and E SD 3V 3S 1 B Ge ner al P urpos e an d A udio E SD Pro t ecti on using E S D5 V3L 1B and ES D3 V3 S 1B TV S Di odes Applic atio n N ote A N 277 Revision: Rev. 1.1 2011-10-09 RF and P r otecti on D evic es Edition 2011-10-09 Published by

"ESD Protection"

Abstract: AN192 ESD protection symbian C166 ESD5V3S1B-02LS TVS 0201 Diode latest gadgets smd 02l
Contextual Info: ES D5 V3 S 1B - 02L R H / -02 LS ES D5 V3 S 1U - 02L R H / -02 LS Effici ent a nd cos t ef fec ti ve E S D prot ectio n for elec t r onic in ter f ac es ES D pro te ction for Audi o s ys te ms and f or ge neral int er fac es Applic atio n N ote A N 192 Revision: 1.0, 2010-02-10

M2805

Abstract: APM2805 APM2805QA JESD-22 MO-229 ANPEC c125t
Contextual Info: APM2805QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged

ixys dsei 2x30

Abstract: DSEI IXYS 2x31 IXYS DSEI 2 DSEI 20-01 A
Contextual Info: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 1000 1000 IFAVM = 2x30 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 30-10P DSEI 2x 31-10P 2x30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM

ixys dsei

Abstract: IRM 1200 80D-5
Contextual Info: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 1200 1200 IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns Type DSEI 2x 30-12P DSEI 2x 31-12P 2x30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM

apm28

Abstract: A104 diode
Contextual Info: APM2804QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged

Contextual Info: LSM-10A D5 Models www.murata-ps.com Single Output, Non-Isolated, 5VIN, 0.8-3.3VOUT, 10A, DC/DC's in SMT Packages NOT RECOMMENDED FOR NEW DESIGNS Typical Unit Features • Step-down buck regulators with industry-standard SMT footprint ■ 5V input 4.5-5.5V range

MC14030

Abstract: 240v n-channel depletion mosfet 170VDC VN0650N3 IN4005 LND150N3
Contextual Info: LND1 Series Application Note AN–D10 3 Off-Line Compact Universal Linear Regulator Introduction voltages that may occur during powering up the 120VAC input line. D5 does not conduct during normal operation. An off-line compact universal linear regulator is shown in Figure

2x101-06 200A

Abstract: 2x101-06 DSEI 2X101-06 ixys dsei 2x101
Contextual Info: DSEI 2x101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 AC-1 IK-10 LN -9 VX-18 IFAVM = 2x96 A VRRM = 600 V trr = 35 ns Type DSEI 2x 101-06P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular; d = 0.5

Contextual Info: DSEI 2x101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 AC-1 IK-10 LN -9 VX-18 IFAVM = 2x91 A VRRM = 1200 V = 40 ns trr Type DSEI 2x 101-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5

QR200

Contextual Info: DSEI 2x101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 AC-1 IK-10 LN -9 VX-18 IFAVM = 2x96 A VRRM = 600 V = 35 ns trr Type DSEI 2x 101-06P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular; d = 0.5

DMA90U1800LB

Contextual Info: DMA 90U1800LB VRRM = 1800 V Id AV M = 99 A IFSM = 320 A Three Phase Rectiier Bridge ISOPLUS Surface Mount Power Device L3 DC+ E72873 L2 D1 D2 D3 L1 L1 L2 L3 D4 D5 D6 DC+ DC- DC- Features Rectiier Bridge Conditions Maximum Ratings VRRM TC = 80°C, sinde 180° (per diode)

Contextual Info: LSM-10A D5 Models www.murata-ps.com Single Output, Non-Isolated, 5VIN, 0.8-3.3VOUT, 10A, DC/DC's in SMT Packages OBSOLETE PRODUCT Last time buy: August 31, 2014. Click Here For Obsolescence Notice of February 2014. Typical Unit Features • Step-down buck regulators with

ixys dsei 2x101

Abstract: IXYS DSEI 2 2x91A ixys dsei 2x91
Contextual Info: DSEI 2x101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 AC-1 IK-10 LN -9 VX-18 IFAVM = 2x91 A VRRM = 1200 V trr = 40 ns Type DSEI 2x 101-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5

IXYS DSEI 2X121

Abstract: 121-02P 12102p 2x123
Contextual Info: DSEI 2x121 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 200 200 Type AC-1 IK-10 LN -9 VX-18 IFAVM = 2x123 A VRRM = 200 V trr = 35 ns DSEI 2x 121-02P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular; d = 0.5

ic1 555

Abstract: ic2 555 ZTX850 ZTX950 DATASHEET OF IC 555 555 timer astable multivibrator 790A ZSD100 Piezo Transducers voltage controlled oscillator using ic 555
Contextual Info: Application Note 16 Issue 1 March 1996 Application Note 16 Issue 1 March 1996 ZD1 Automotive and Household Siren Driver Circuits D5 R6 +12V C5 R12 ZSD100 and Discrete ’H’ Bridge Minimum Part Count Solution R13 D2 D4 TR6 TR4 David Brotton Neil Chadderton

Contextual Info: CD54HC166F3A, CD54HCT166F3A COMPLETE DATA SHEET | COMING SÛOM! ! June 1997 8-Bit Parallel-ln Serial-Out Shift Register 3793 Functional Diagram DO D1 D2 D3 D4 D5 D6 D7 The CD54HC166F3A and CD54HCT166F3A 8-bit shift register is fabricated with silicon-gate CMOS technology. It

31N1

Abstract: BTS726L1 DTS726L1 BTS 19 Pa99
Contextual Info: m f l P 3 5b D5 00A171S 443 • SIEMENS PROFET BTS726L1 Smart Two Channel Highside Power Switch F ea tu re s • • • • • Overload protection Current limitation Short-circuit protection Thermal shutdown Overvoltage protection including load dump

diode S6 39

Abstract: APTC80TDU15P
Contextual Info: APTC80TDU15P Triple dual Common Source VDSS = 800V RDSon = 150mΩ max @ Tj = 25°C ID = 28A @ Tc = 25°C Super Junction MOSFET Power Module G3 G1 G5 S3 S1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies D5 S5

74HCS73

Abstract: RCA 74HCT573 TH 373
Contextual Info: Technical Data CD54/74HC373, CD54/74HCT373 CD54/74HC573, CD54/74HCT573 File N um b er 1679 High-Speed CMOS Logic 00 — 01 -C2 Q2 - Q3 D3 - 04 - D5 - Q5 D6 - D7 - 06 — 07 0E Octal Transparent Latch, 3-State Output 04 92cs- 38583

2x61

Abstract: IXYS DSEI 2X61 6112P
Contextual Info: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 IFAVM = 2x52 A VRRM = 1200 V trr = 40 ns Type DSEI 2x 61-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM

Contextual Info: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 IFAVM = 2x52 A VRRM = 1200 V = 40 ns trr Type DSEI 2x 61-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM

IXYS DSEI 2

Abstract: ixys dsei 2x30
Contextual Info: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 600 600 IFAVM = 2x30 A VRRM = 600 V trr = 35 ns Type DSEI 2x 30-06P DSEI 2x 31-06P 2x 30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular; d = 0.5