D49 DIODE Search Results

BAY84

Abstract: BAY85S D1850 SDBAX12 bay85 BAS21 A82 d53 MARKING CODE SOT23
Contextual Info: SWITCHING DIODES SOT23 PACKAGE Ptot=350mW VR Part No. Marking V BAL99 JF 70 BAR99 JG 70 BAS16 A6 75 BAS19 A8 100 BAS20 A81 150 BAS21 A82 200 BAS29 L20 90 BAS31 L21 90 BAS35 L22 90 BAV70 A4 70 BAV99 A7 70 BAW56 A1 70 BAY84 D49 90 BAY85 D53 240 BAY85S DB6 240

DIODE D28 06

Abstract: DIODE D38 -06 DIODE D38 06 DIODE D28 DIODE D28 04 10-FZ062TA030FB02-P983D38 p983
Contextual Info: 10-F0062TA030 FB/FB03)-P983(D19/D49) preliminary datasheet flow PFC 0 600 V/ 2 x 15 A / 50 kHz Features flow 0 housing ● Vincotech clip-in housing ● Compact and low inductance design ● Suitable for Interleaved topology

Contextual Info: Central CMPD5001 CMPD5001S TM Semiconductor Corp. HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring extremely high

Contextual Info: Central” CMPD5001 CMPD5001S Semiconductor Corp. HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring extremely high

D49 diode

Abstract: sot 23 marking code R4 CMPD5001 CMPD5001S DIODE MARKING CODE SOT23
Contextual Info: CMPD5001 CMPD5001S SURFACE MOUNT HIGH CURRENT INDUCTIVE LOAD SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching

Contextual Info: CMPD5001 CMPD5001S SURFACE MOUNT HIGH CURRENT INDUCTIVE LOAD SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching

D49 transistor

Abstract: CMPD5001 CMPD5001S diode da2
Contextual Info: Central CMPD5001 CMPD5001S TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT INDUCTIVE LOAD SILICON SWITCHING DIODE Description: The Central Semiconductor CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for

diode da2

Abstract: IRIF
Contextual Info: Central CMPD5001 CMPD5001S TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT INDUCTIVE LOAD SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for

338 sot-23

Abstract: D49 diode LF MARKING CODE 338 marking code LF400
Contextual Info: Central“ CMPD5001 CMPD5001S Semiconductor Corp. SURFACE MOUNT HIGH CURRENT INDUCTIVE LOAD SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for

KY710

Abstract: KY712 KY701F KY717 KY708 KY715 KY718 KY719 KY702F KY711
Contextual Info: I SILICON RECTIFIER DIODES 0.7. 1, 10, 20 A SILIZIUM GLEICHRICHTERDIODEN 0,7, 1, 10, 20 A Type Typ Maximum ratings • Grenzdaten If /W l/SM Ua ef UR W M UfiSM Ro min A A V s V V a Characteristic data • Kenndaten at Uf If iRmai a t bei bei V A f«A KY701F

Contextual Info: Central’ CMPD5001 CMPD5001S Semiconductor Corp. HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching inductive load

Contextual Info: Central" CMPD5001 CMPD5001S semiconductor Corp. HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching inductive load

CMPD5001

Abstract: CMPD5001S
Contextual Info: Central CMPD5001 CMPD5001S TM Semiconductor Corp. HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching inductive load

Contextual Info: Central CMPD5001 CMPD5001S Semiconductor Corp. HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching inductive load

Contextual Info: Central CMPD5001 CMPD5001S Semiconductor Corp. HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching inductive load

Contextual Info: Central CMPD5001 CMPD5001S TM Sem i c o n d u c t o r C o r p . HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designedforsw itching inductive load

BAX12

Abstract: BAY85S MARKING D53 marking IAY marking JB diode BAV70 BAV74 BAW56 BAT18DK Thomson-CSF diodes
Contextual Info: general purpose and switching diodes 1* diodes d'usage général et de com m utation Types •f AV VF @ lF |R @ V R V RM* (V) (mA) max (V) (mA) max (nA) (V) BAL74 50 70 1 100 100 50 BAL 99 70 70 1,3 100 2500 70 BAR 74 SD 914 BAS 16 SD BAX12 50 75 75 90(3)

D70 SOT23

Abstract: D46 diode dual zener MARKING D53 SOT23 marking D58 AZ23C3V0 d54 marking marking code d47 MARKING D53 PART NUMBER MARKING d45
Contextual Info: AZ23-V-G-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features • Dual silicon planar Zener diodes, common anode • The Zener voltages are graded according to the international E 24 standard • The parameters are valid for both diodes in one case. ΔVZ and ΔRzj of the two

MAX17129ETE

Abstract: D2-D11 MAX17149ETE
Contextual Info: 19-5766; Rev 0; 2/11 MAX17129 Evaluation Kit Evaluates: MAX17129/MAX17149 General Description Features The MAX17129 evaluation kit EV kit provides a proven design to evaluate the MAX17129 high-efficiency driver for white light-emitting diodes (WLEDs). The EV kit

D55 SOT 23-5

Abstract: D70 SOT23 MARKING D53 SOT23 D56 SOT23 AZ23B3V9-V-G D61 SOT-23 marking D58 marking D63 D45 SOT23 AZ23C6V2-V-G
Contextual Info: AZ23-V-G-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features • Dual silicon planar Zener diodes, common anode • The Zener voltages are graded according to the international E 24 standard • The parameters are valid for both diodes in one case. ΔVZ and ΔRzj of the two

Contextual Info: m V E R E X ME400802 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 T h re e -P h S S e Diode Bridge Modules 20 Amperes/800 Volts Description: Powerex Three-Phase Diode Bridge Modules are medium powered devices for use in

ME400802

Abstract: powerex ME40
Contextual Info: ME400802_ I'owerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 ThtG6-PhaS6 Diode Bridge Modules 20 Amperes/800 Volts Description: Powerex Three-Phase Diode Bridge Modules are medium

AZ23B3V9-V-G

Abstract: D70 SOT23 D50 SOT23
Contextual Info: AZ23-V-G-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features • Dual silicon planar Zener diodes, common anode • The Zener voltages are graded according to the international E 24 standard • The parameters are valid for both diodes in one case. ΔVZ and ΔRzj of the two

Contextual Info: DSEP 30-03A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 300 V = 30 ns trr with soft recovery VRSM VRRM V V 300 300 Type A C TO-247 AD C DSEP 30-03A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 145°C; rectangular, d = 0.5