D4 DIODE Search Results

914B

Abstract: 1N3600 DO-35 1n4147 IR D4-D4 IR diode D4-D4 1N3064 1N4009 1N625 1N914A
Contextual Info: NATL S E M ICONO HE D IS C R E T E D I National Semiconductor t.S Q H 3 Q 0031^0 B | g T-OI-OÌ * sr Computer Diodes Glass Package VF V c *rr na Max Teat Cond. Proc. No. 1000 (Note 1) D4 4 (Note 2) D4 20 4 (Note 2) D4 0.72 1.0 5 100 4 (Note 2) D4 20 75 1.0

in4152

Abstract: IR D4-D4
Contextual Info: This Computer Diodes continued Surface Mount Diodes LEADLESS G LA SS PACKAGE BV (V) Min FDLL4151 LL-34 75 FDLL 4152 LL-34 40 Its Manufacturer C PF Max trr ns Max Test Cond. Proc. Family 50 4.0 2.0 (Note 2) D4 30 0.8B 20 SeelN4152 4.0 2.0 (Note 2) D4 50 0.88

1S920

Abstract: 1n659 diode BA318 1S44 1N461A 1N462A 1N463A 1N659 1N660 1N661
Contextual Info: Diode Data NATL SEMICOND DISCRETE D | h e b5013.30 DQ37Q03 D | T -0 1 -0 1 500 25 1.0 100 D2 70 500 60 1.0 100 D2 175 1.0 100 1.0 6.0 300 Note 1 D4 6.0 300 (Note 1) D1 300 (Note 1) D1 8 (Note 2) D4 1N461A DO-35 1N463A 1N659 1N660 DO-35 DO-35 DO-35 200 60

Notch filter 50Hz 60Hz

Abstract: 50hz notch filter
Contextual Info: intei 2912 FAMILY PCM LINE FILTERS Frequency Responee CCITTG712 D3/D4 Idle Channel Noise dBrncO 1:2 2912-3 2912 14 2912-5 2912-6 • Direct Interface to the Intel 29 I0A/2911A PCM Codecs Including Stand-By, Power Down Mode AT&T® D3/D4 Compatible and CCITT G712 Compatible

ADP8860

Abstract: DL17 JESD51-9 MO-220-VGGD-1 ADP8860ACPZ-R7 4558 PIN input id 4558 equivalent photo sensor pin diagram photosensor driver diagram
Contextual Info: Charge Pump, 7-Channel Smart LED Driver with I2C Interface ADP8860 FEATURES VALS OPTIONAL PHOTOSENSOR VOUT PHOTOSENSOR 0.1µF D1 D3 VIN D2 E3 D3 D4 E4 D5 D4 B4 B3 C3 D6/ CMP_IN2 A3 1µF 1µF E1 VDDIO SDA A1 ADP8860 C1 C2 VDDIO B1 SCL E2 B2 VDDIO nINT VOUT

si8956

Contextual Info: T e m ic SÌ8956AZ/883 Siliconix Quad N-Channel Enhancement-Mode MOSFET Product Summary r DS on ( Q ) I d (A) 0.1 @ v GS = 10 V 5 0.2 @ V GS = 4.5 V 1 V d s CV) 20 LCC-20 Sj Si D2 D2 Gj D4 D4 G3 S3 S3 Top View Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)

APT0502

Abstract: APTM20TDUM16PG 104-A diode s4 53
Contextual Info: APTM20TDUM16PG Triple dual common source MOSFET Power Module D3 G3 G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D6 D3 G1 S1/S2 D2 S1 D5 G3 S3/S4 S3 G5 S5/S6 S5 S2 S4 S6 G2 G4 G6 D4 D6 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

Contextual Info: Si8956AZ/883 Siliconix Quad NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.1 @ VGS = 10 V 5 0.2 @ VGS = 4.5 V 1 LCCĆ20 S1 S1 G1 D4 D4 3 2 1 20 19 D1 4 18 S4 D1 5 17 S4 G2 6 16 G4 S2 7 15 D3 S2 8 14 D3 9 10 11 12 13 D2

J3E diode

Contextual Info: Tem ic SÌ8956AZ/883 Siliconix Quad N-Channel Enhancement-Mode MOSFET Product Summary V 'd s V I d « • » S (o n ) ( ß ) (A ) o .l @ V G S = 1 0 V 5 0 .2 @ V G S = 4 .5 V 1 20 L C C -20 Si S i D 2 D 2 G ì D4 D4 G3 S3 S3 Tbp View Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)

MP7003

Abstract: MP700
Contextual Info: MP7003 TOSHIBA Power Module MP7003 1. Maximum Ratings Ta = 25°C Diode Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 600 V Peak one cycle surge forward current (D1, D2, D3, D4) (50 Hz, non-repetitive) IFSM 220 A Forward current

Contextual Info: YG225C4,N4,D4 10A (400V / 10A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2

Contextual Info: YG339C4,N4,D4 5A (400V / 5A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2

YG339N4

Contextual Info: YG339C4,N4,D4 5A (400V / 5A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2

YG225N4

Contextual Info: YG225C4,N4,D4 10A (400V / 10A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2

Contextual Info: DATE OF ISSUE : 2008. 06. 17. SPECIFICATION MODEL : SLTNCW13122N [Approved Rank : VF S , λD(S, L), IV(D1, D2, D3, D4)] WHITE TOP VIEW CUSTOMER : SAMSUNG ELECTRO-MECHANICS DRAWN CHECKED APPROVED Preliminary CUSTOMER : DRAWN CHECKED APPROVED SAMSUNG ELECTRO-MECHANICS CO,.LTD.

Contextual Info: SN54170, SN54LS170, SN74170, SN74LS170 4-BY-4 REGISTER FILES WITH OPEN-COLLECTOR OUTPUTS _ M A R C H 1 9 7 4 - Separate Read/Write Addressing Permits Simultaneous Reading and Writing Fast Access Times . . . Typically 20 ns D2 D3 D4 •

Contextual Info: DSEP 15-06B HiPerFREDTM Epitaxial Diode IFAV = 15 A VRRM = 600 V = 25 ns trr with soft recovery Preliminary data VRSM VRRM V V 600 600 Type A C TO-220 AC C DSEP 15-06B A C TAB D4 A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS

TCM37C14A

Abstract: t s x 17
Contextual Info: TCM37C14A, TCM37C15A PCM COMBO WITH PROGRAMMABLE GAIN CONTROL SLWS018B - JUNE 1996 - REVISED MAY 1998 • Meet CCITT/ D3/D4 Channel Bank Recommendations for Input Signals Greater than -5 5 dBmO • Programmable Transmit and Receive Gain Control With Pin-Selectable

GLAR94001

Abstract: SIDE VIEW LED
Contextual Info: DATE OF ISSUE : 2008. 06. 17. SPECIFICATION MODEL : SLTNCW13122N [Approved Rank : VF S , λD(S, L), IV(D1, D2, D3, D4)] WHITE TOP VIEW CUSTOMER : SAMSUNG ELECTRO-MECHANICS DRAWN CHECKED APPROVED CUSTOMER : DRAWN CHECKED APPROVED SAMSUNG ELECTRO-MECHANICS CO,.LTD.

GLAR94001

Contextual Info: DATE OF ISSUE : 2009. 02. 24. SPECIFICATION MODEL : SLTNWW13122N [Approved Rank : VF S , CIE(M, T, U, V), IV(D1, D2, D3, D4)] WARM WHITE TOP VIEW CUSTOMER : CUSTOMER : DRAWN CHECKED APPROVED Preliminary SAMSUNG ELECTRO-MECHANICS DRAWN SALES QUALITY APPROVED

3003a

Abstract: 30C300HB
Contextual Info: DSEC 30-03A HiPerFREDTM Epitaxial Diode IFAV = 2x15 A VRRM = 300 V trr = 30 ns with common cathode and soft recovery VRSM VRRM V V 300 300 A Type C A TO-247 AD A C A DSEC 30-03A C TAB D4 A = Anode, C = Cathode, TAB = Cathode Conditions Maximum Ratings IFRMS

4005A

Abstract: mosfet induction heater T4 3560 welding rectifier D-68623
Contextual Info: VBH 40-05A Advanced Technical Information Module with HiPerFETTM H-Bridge and Single Phase Mains Rectifier Bridge VDSS = 500 V Ω RDSon = 116 mΩ VRRM = 1200 V IDAV25 = 90 A Application Mains Rectifier Bridge D1 - D4 Symbol Conditions Maximum Ratings VRRM

Contextual Info: Connection Diagram 4148 4148SE 3 3 3 3 5H 2 1 1 4148CC MARKING 5H MMBD4148CA D6 MMBD4148 MMBD4148CC D5 MMBD4148SE D4 SOT-23 2 1 1 2 3 3 2 1 1 4148CA 2 Small Signal Diode Absolute Maximum Ratings * Symbol VRRM TA = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage

DMA90U1800LB

Contextual Info: DMA 90U1800LB VRRM = 1800 V Id AV M = 99 A IFSM = 320 A Three Phase Rectiier Bridge ISOPLUS Surface Mount Power Device L3 DC+ E72873 L2 D1 D2 D3 L1 L1 L2 L3 D4 D5 D6 DC+ DC- DC- Features Rectiier Bridge Conditions Maximum Ratings VRRM TC = 80°C, sinde 180° (per diode)