D3S MARKING Search Results

Contextual Info: = = = 5 HE D " • cì 5 3 c]bcì 0 DG01SM7 D3S ■ ÜJAF WS57C71C ÜIAFER SCALE INTEGRATION HIGH SPEED 32K x 8 CMOS PROM/RPROM K E Y FEATURES • Ultra-Fast Access Time • Immune to Latch-UP — 35 ns — Up to 200 mA • Low Power Consumption • Fast Programming

"digital to synchro"

Abstract: digital to synchro converter DSL416 DSL412 DSL410 DSL60-H-1 Scans-001802 synchro to digital converter 11 bits synchro computer conversions
Contextual Info: COMPUTER CONVERSIONS CORP f • C o m p u te r KBo n v e r s o n s C o r p o r a t io n EAST NO RTHPORT, N.Y. 11731 516 261-3300 • TWX 510-226-0448 SIE D ■! 2310Ö0D □ □□□Mbcì D3S H C C O LOW PROFILE DIGITAL TO SYNCHRO CONVERTER DSL SERIES W Ih I IIIh W

"digital to synchro"

Abstract: digital to synchro converter DSL60-H-1 DSL40 DSL410 DSL416 DSL412 synchro to digital converter 11 bits DSL40-LorH-1
Contextual Info: COMPUTER CONVERSIONS CORP f • C o m p u te r KBo n v e r s o n s C o r p o r a t io n EAST NO RTHPORT, N.Y. 11731 516 261-3300 • TWX 510-226-0448 SIE D ■! 2310Ö0D □ □□□Mbcì D3S H C C O LOW PROFILE DIGITAL TO SYNCHRO CONVERTER DSL SERIES W Ih I IIIh W

d3s marking

Abstract: d3s diode DIODE marking S6 89
Contextual Info: Schottky Barrier Diode Axial Diode Wtm OUTLINE P ack ag e : AX14 D3S4M 40V 3A 0 Feature • Tj=150°C • Tj=150°C • P r r s m T ’A ' ^ V ì ' I ' K ì E • P rrsm Rating DC/DC n y j t - l ? • m m 26.5 26.5 iT > Main Use • * JS fM M B S H Marking

DCM21-PC

Abstract: 600C CSA-22 TTC-108 FL040 microtran 6000CT
Contextual Info: REV. S ta tu e ISSUE 2 REVISED AND REDRAWN ON CAD/CAM 0 1 /0 0 /9 2 HA ISSUE 3 TEMECULA WAS CARSON 0 1 /2 8 /9 3 TS ISSUE 4 ADDCD DCM21—PC MICROTRAN AND SAFETY 0 1 /2 0 /9 6 TS TELECOMMUNICATION DRY COUPLING TRANSFORMER DESIGNED TO OPERATE AT A MAX LEVEL OF +7dBm AND TO REFLECT A PRIMARY SOURCE IMPEDANCE OF APPROXIMATELY

Contextual Info: 2SK2570 Silicon N-Channel MOS FET Low Frequency Power Switching HITACHI Features • Low on-resistance RDS „n, = 0. m typ. (Vos = 4 V, ID = 1(M mA) • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK *2 1. Source 2. Gate 3. Drain 990 ADE-208-574

Contextual Info: Schottky Barrier Diode Axial Diode mtm D3S4M O U T L IN E U n it ! m m Package I AX14 W e igh t 1 .0 6 g T yp 40V 3A * Feature 7 26.5 • Tj=150°C • P r r s m Rating • T j=150T C • PRRSM ^y^ VÍ/X<SÍ¡E • D C /D C 3 • ÍÜ 5 1 . y - A . O A t l f s

diode d3s6m

Abstract: 251C
Contextual Info: Schottky Barrier Diode Axial Diode OUTLINE Package I AX14 D3S6M U nit : m m W eight 1.06g Typ 60V 3A @ T Feature Z I 26.5 • T j= 1 5 C fC • Tj=150°C • P rrsm P K ^ V î/x (S ü E • P r r s m Rating 26.5 M Main Use * g m m iH N H M arking • Switching Regulator

Contextual Info: International IO R Rectifier • • • • • PD - 9.1435B PRELIMINARY IRF7311 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Vdss = 20 V ^DS on = 0.029Î2 Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier

diode D3s

Abstract: wwS marking d3s marking d3s diode
Contextual Info: Schottky Barrier Diode Axial Diode Wtm OUTLINE P ack ag e : AX14 D3S6M Unit-mm Weight 1.06g Typ 60V 3A cl) Feature • Tj=150°C • P rr s m T ’A ' ^ V ì ' I ' K •^ ì E 26.5 26.5 • Tj=150°C • P r r s m Rating 0> H 4- Main Use " j^ -y ^ w s ä

marking R1E

Abstract: SCR PNPN T092
Contextual Info: r = 7 SG S-TH O M SO N ^ 71 KtusMitLneinssoiffliiei P 0 1 x x x A /B SENSITIVE GATE SCR FEATURES = 0.8A = 100V to 400V • Low Ig t < 1^A max to < 200 1A ■ It r m s ) - V drM DESCRIPTION The P01xxxA/B series of SCRs uses a high performance planar PNPN technology. These

IRF9410

Contextual Info: International I"R Rectifier P D -9.1562A PRELIMINARY IRF9410 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated V dss = 30V R ds oh = 0.030É2

irl1004

Abstract: RF1010
Contextual Info: PD - 9.1702 International IÖ R Rectifier IRL1004 HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

IRL2910 equivalent

Abstract: 2D 1002 diode EA MOSFET 63 ng
Contextual Info: PD - 9.1384B In te rn a tio n a l IOR Rectifier IRLI2910 PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Ultra Low On-Resistance • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm

2D 1002 diode

Abstract: d3s marking DIODE D3S 90 MARKING tAN SOT-23 diode MARKING tAN SOT-23
Contextual Info: PD - 9 .1508C International IOR Rectifier IR L M S 1 5 0 3 HEXFET Power MOSFET • Generation V Technology • Micro6 Package Style • Ultra Low Rds on • N-Channel MOSFET V dss = 3 0 V RDS(on) = 0 .1 0 Î2 Description Fifth Generation H EXFETsfrom International Rectifier

2D 1002 diode

Abstract: sot 23 d9 d3s marking
Contextual Info: PD - 9.1540B International IOR Rectifier IRLMS1902 HEXFET Power MOSFET • Generation V Technology • Micro6 Package Style • Ultra Low Rds on • N-Channel MOSFET V dss = 20 V RDS(on) = 0 .1 0 Î2 Description Fifth Generation H EXFETsfrom International Rectifier

DIODE D3S 5D

Contextual Info: PD -9.1674 International IÖR Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 60V ^D S o n = 0 . 0 4 2 Í 2 Id = 2 1 A

Contextual Info: PD - 9 .1673A International IÖR Rectifier IRFIZ24E HEXFET Power M O SFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS <D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Description Fifth G en eratio n H E X F E T s fro m International R ectifier

Contextual Info: P D -9.1673 International IÖR Rectifier IRFIZ24E HEXFET Power M O SFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS <D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Description Fifth G en eratio n H E X F E T s fro m International R ectifier

DIODE D3S 5D

Abstract: diode D3s IRFZ3
Contextual Info: PD - 9.1674A International IÖR Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 60V ^D S o n = 0 . 0 4 2 Í 2 Id = 2 1 A

Contextual Info: PD - 9.1497A International IÖR Rectifier IRLI540N P R E L IM IN A R Y HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated

DIODE D3S 90

Contextual Info: P D - 9 .1 6 4 4 Internationa lO R Rectifier IRL1004S/L PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Surface Mount IRL1004S • Low-profile through-hole (IRL1004L) • Advanced Process Technology • Surface Mount • Ultra Low On-Resistance

C2246A

Abstract: 2246AH5C
Contextual Info: Raytheon Electronics Semiconductor Division TM C 2246A Im age Filter 11 X 10 bit, 60 MHz Applications • • • • • • • • • • • • • 60 M H z computation rate 60 M H z data and coefficient input Four 11 x 10-bit multipliers Individual data and coefficient inputs

Contextual Info: TMC2246 TMC2246 CMOS Image Filter 11 X 10 Bit, 40 MHz Description The TMC2246 is a video speed The TMC2246 is a video speed convolutional array composed of four 11 x 10 bit registered multipliers followed by a summer and an accumulator. All eight multiplier inputs are accessible to