D2206 TRANSISTOR Search Results

D2206 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

D2206 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
D2206 transistor Abstract: d2206 Contextual Info: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD2206 O-92MOD D2206 transistor d2206	PDF
D2206 transistor Abstract: d2206 2sd2206 Contextual Info: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD2206 D2206 transistor d2206 2sd2206	PDF
D2206 transistor Abstract: D2206 2SD2206 Contextual Info: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD2206 D2206 transistor D2206 2SD2206	PDF
D2206 Abstract: D2206 transistor 2SD2206 Contextual Info: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD2206 D2206 D2206 transistor 2SD2206	PDF
Contextual Info: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD2206	PDF
D2206 transistor Abstract: D2206 2sd2206 D2206 a Contextual Info: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD2206 D2206 transistor D2206 2sd2206 D2206 a	PDF
D2206 Abstract: D2206 transistor D2206 a 2SD2206 TO92-MOD Contextual Info: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD2206 D2206 D2206 transistor D2206 a 2SD2206 TO92-MOD	PDF