D2 MARKING CODE DPAK Search Results
D2 MARKING CODE DPAK Equivalents
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D2 MARKING CODE DPAK Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TK5R1P08QM |
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MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK | Datasheet | ||
| TK6R9P08QM |
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MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK | Datasheet | ||
| TC4511BP |
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CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 | Datasheet | ||
| 68305-001LF |
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Din Accessory Coding | |||
| 65197-001LF |
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Din Accessory Coding Part |
D2 MARKING CODE DPAK Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
High Voltage 8 and 16 Amp
Abstract: HVSSeries
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Original |
CSHDD16 High Voltage 8 and 16 Amp HVSSeries | |
CDBD620-G
Abstract: CDBD640-G CDBD650-G CDBD660-G CDBD680-G CDBD6100-G
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Original |
CDBD620-G CDBD6100-G mQW-BB032 CDBD620-G SK620Y CDBD640-G SK640Y CDBD650-G SK650Y CDBD660-G CDBD640-G CDBD650-G CDBD660-G CDBD680-G CDBD6100-G | |
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Contextual Info: Chip Schottky Barrier Rectifier CDBD620-G Thru. CDBD6100-G Reverse Voltage: 20 to 100 Volts Forward Current: 6.0 Amp RoHS Device DPAK Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. |
Original |
CDBD620-G CDBD6100-G CDBD620-G SK620Y CDBD640-G SK640Y CDBD650-G SK650Y CDBD660-G SK660Y | |
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Contextual Info: COMCHIP Chip Schottky Barrier Rectifier SMD Diodes Specialist CDBD620-G Thru. CDBD6100-G Reverse Voltage: 20 to 100 Volts Forward Current: 6.0 Amp RoHS Device DPAK Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. |
Original |
CDBD620-G CDBD6100-G CDBD620-G SK620Y CDBD640-G SK640Y CDBD650-G SK650Y CDBD660-G SK660Y | |
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Contextual Info: SMD Schottky Barrier Rectifiers CDBD540-HF Thru. CDBD5200-HF Reverse Voltage: 40 to 200 Volts Forward Current: 5.0 Amp RoHS Device Halogen Free Features TO-252/DPAK - Batch process design, excellent power dissipation offers better reverse leakage current and thermal |
Original |
CDBD540-HF CDBD5200-HF O-252/DPAK MIL-STD-19500 CDBD5040-HF SK540Y CDBD5045-HF SK545Y CDBD5060-HF SK560Y | |
1N4D02
Abstract: 0163f TS317 TS317CM TS317CP TS317CW TS317CZ U014 LADJ
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OCR Scan |
TS317 O-220 O-263 O-252 OT-223 TS317 O-220, O-263, O-252 1N4D02 0163f TS317CM TS317CP TS317CW TS317CZ U014 LADJ | |
diode D07-15
Abstract: D07 15
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Original |
TS317 O-220 O-263 O-252 OT-223 TS317 O-220/TO-y diode D07-15 D07 15 | |
TS317CP
Abstract: 18BSC TS317 TS317CM TS317CW TS317CZ adjustable current limiter
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Original |
TS317 O-220 O-263 OT-223 O-252 TS317 O-220, O-263, O-252 TS317CP 18BSC TS317CM TS317CW TS317CZ adjustable current limiter | |
diode D07-15
Abstract: D07 15 TS317CW diode marking code cz diode d07 D07 15 diode 18BSC TS317 TS317CM TS317CP
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Original |
TS317 O-220 O-263 O-252 OT-223 TS317 O-220/TO-263 diode D07-15 D07 15 TS317CW diode marking code cz diode d07 D07 15 diode 18BSC TS317CM TS317CP | |
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Contextual Info: TS317I 3-Terminal Adjustable Positive Voltage Regulator TO-220 TO-263 2 D PAK TO-252 (DPAK) SOT-223 Pin Definition: 1. Adjustable 2. Output 3. Input Heatsink is connected to Pin 2 General Description The TS317 is adjustable 3-terminal positive voltage regulator capable of supplying in excess of 1.5A over an output |
Original |
TS317I O-220 O-263 O-252 OT-223 TS317 O-220, O-263, O-252 | |
voltage regulator sot 223
Abstract: TS317CM TS317CW 3V Positive Voltage Regulator C07 MARKING CODE TS317CP diode marking code cz 3-terminal adjustable regulator marking code voltage regulators marking codes transistors sot-223
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Original |
TS317 O-220 O-263 O-252 OT-223 TS317 O-220/TO-263 voltage regulator sot 223 TS317CM TS317CW 3V Positive Voltage Regulator C07 MARKING CODE TS317CP diode marking code cz 3-terminal adjustable regulator marking code voltage regulators marking codes transistors sot-223 | |
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Contextual Info: NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4806N |
Original |
NTD4806N, NVD4806N NTD4806N/D | |
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Contextual Info: DP AK BT151S-650S SCR 20 June 2014 Product data sheet 1. General description Passivated sensitive gate Silicon Controlled Rectifier SCR in a SOT428 (DPAK) surface mountable plastic package intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. These devices are |
Original |
BT151S-650S OT428 | |
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Contextual Info: NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4809N These Devices are Pb−Free and are RoHS Compliant |
Original |
NTD4809N, NVD4809N NTD4809N/D | |
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Contextual Info: NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4809NH |
Original |
NTD4809NH, NVD4809NH NTD4809NH/D | |
208S8Contextual Info: DP AK BTA208S-800F 3Q Hi-Com Triac 11 August 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT428 DPAK surface mountable plastic package. This "series F" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low |
Original |
BTA208S-800F OT428 208S8 | |
MARKING code u1 sot 563
Abstract: MT 1379 DEC sot-353 marking B2 marking ayWW SOT23
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Original |
OT-23 OT-89 MARKING code u1 sot 563 MT 1379 DEC sot-353 marking B2 marking ayWW SOT23 | |
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Contextual Info: A Product Line of Diodes Incorporated DXTP560BP5 ADV AN CE I N FORM AT I ON 500V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR POWERDI 5 Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > -500V IC = -150mA Continuous Collector Current |
Original |
DXTP560BP5 -500V -150mA OT223; AEC-Q101 DS35054 | |
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Contextual Info: A Product Line of Diodes Incorporated DXTP560BP5 ADVANCE INFORMATION 500V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR POWERDI 5 Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > -500V IC = -150mA Continuous Collector Current |
Original |
DXTP560BP5 -500V -150mA OT223; AEC-Q101 J-STD-020 DS35054 | |
4806n
Abstract: NTD4806NT4G 4806ng 48 06ng 369ad
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Original |
NTD4806N, NVD4806N AEC-Q101 NTD4806N/D 4806n NTD4806NT4G 4806ng 48 06ng 369ad | |
48 09ng
Abstract: 4809ng mosfet 48 09ng 09ng 4809n mosfet on 09ng NTD4809NA-1G 09ng 040 48 369D
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Original |
NTD4809NA NTD4809NA/D 48 09ng 4809ng mosfet 48 09ng 09ng 4809n mosfet on 09ng NTD4809NA-1G 09ng 040 48 369D | |
09nhg
Abstract: NTD4809NHT4G 4809nhg NTD4809NH 369D 48 09NHG
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Original |
NTD4809NH NTD4809NH/D 09nhg NTD4809NHT4G 4809nhg NTD4809NH 369D 48 09NHG | |
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Contextual Info: NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4809N These Devices are Pb−Free and are RoHS Compliant |
Original |
NTD4809N, NVD4809N NTD4809N/D | |
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Contextual Info: NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4804N These Devices are Pb−Free and are RoHS Compliant |
Original |
NTD4804N, NVD4804N NTD4804N/D | |