D2 MARKING CODE DPAK Search Results
D2 MARKING CODE DPAK Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 5446/BEA | Rochester Electronics LLC | 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) |
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| 54LS190/BEA | Rochester Electronics LLC | 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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D2 MARKING CODE DPAK Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
High Voltage 8 and 16 Amp
Abstract: HVSSeries
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Original |
cshdd16high voltage 8 and 16 amphvsseries | |
CDBD620-G
Abstract: CDBD640-G CDBD650-G CDBD660-G CDBD680-G CDBD6100-G
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Original |
cdbd620-gcdbd6100-gmqw-bb032sk620y+6 | |
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Contextual Info: Chip Schottky Barrier Rectifier CDBD620-G Thru. CDBD6100-G Reverse Voltage: 20 to 100 Volts Forward Current: 6.0 Amp RoHS Device DPAK Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. |
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cdbd620-gcdbd6100-gsk620ycdbd640-g+5 | |
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Contextual Info: COMCHIP Chip Schottky Barrier Rectifier SMD Diodes Specialist CDBD620-G Thru. CDBD6100-G Reverse Voltage: 20 to 100 Volts Forward Current: 6.0 Amp RoHS Device DPAK Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. |
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cdbd620-gcdbd6100-gsk620ycdbd640-g+5 | |
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Contextual Info: SMD Schottky Barrier Rectifiers CDBD540-HF Thru. CDBD5200-HF Reverse Voltage: 40 to 200 Volts Forward Current: 5.0 Amp RoHS Device Halogen Free Features TO-252/DPAK - Batch process design, excellent power dissipation offers better reverse leakage current and thermal |
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cdbd540-hfcdbd5200-hfo-252/dpakmil-std-19500+6 | |
1N4D02
Abstract: 0163f TS317 TS317CM TS317CP TS317CW TS317CZ U014 LADJ
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OCR Scan |
ts317o-220o-263o-252+9 | |
diode D07-15
Abstract: D07 15
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Original |
ts317o-220o-263o-252+4 | |
TS317CP
Abstract: 18BSC TS317 TS317CM TS317CW TS317CZ adjustable current limiter
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Original |
ts317o-220o-263ot-223+7 | |
diode D07-15
Abstract: D07 15 TS317CW diode marking code cz diode d07 D07 15 diode 18BSC TS317 TS317CM TS317CP
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ts317o-220o-263o-252+11 | |
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Contextual Info: TS317I 3-Terminal Adjustable Positive Voltage Regulator TO-220 TO-263 2 D PAK TO-252 (DPAK) SOT-223 Pin Definition: 1. Adjustable 2. Output 3. Input Heatsink is connected to Pin 2 General Description The TS317 is adjustable 3-terminal positive voltage regulator capable of supplying in excess of 1.5A over an output |
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ts317io-220o-263o-252+2 | |
voltage regulator sot 223
Abstract: TS317CM TS317CW 3V Positive Voltage Regulator C07 MARKING CODE TS317CP diode marking code cz 3-terminal adjustable regulator marking code voltage regulators marking codes transistors sot-223
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ts317o-220o-263o-252+12 | |
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Contextual Info: NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4806N |
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ntd4806nnvd4806nntd4806n/d | |
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Contextual Info: DP AK BT151S-650S SCR 20 June 2014 Product data sheet 1. General description Passivated sensitive gate Silicon Controlled Rectifier SCR in a SOT428 (DPAK) surface mountable plastic package intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. These devices are |
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bt151s-650sot428 | |
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Contextual Info: NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4809N These Devices are Pb−Free and are RoHS Compliant |
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ntd4809nnvd4809nntd4809n/d | |
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Contextual Info: NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4809NH |
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ntd4809nhnvd4809nhntd4809nh/d | |
208S8Contextual Info: DP AK BTA208S-800F 3Q Hi-Com Triac 11 August 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT428 DPAK surface mountable plastic package. This "series F" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low |
Original |
bta208s-800fot428208s8 | |
MARKING code u1 sot 563
Abstract: MT 1379 DEC sot-353 marking B2 marking ayWW SOT23
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Original |
ot-23ot-89marking code u1 sot 563mt 1379 dec+2 | |
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Contextual Info: A Product Line of Diodes Incorporated DXTP560BP5 ADV AN CE I N FORM AT I ON 500V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR POWERDI 5 Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > -500V IC = -150mA Continuous Collector Current |
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dxtp560bp5-500v-150maot223+2 | |
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Contextual Info: A Product Line of Diodes Incorporated DXTP560BP5 ADVANCE INFORMATION 500V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR POWERDI 5 Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > -500V IC = -150mA Continuous Collector Current |
Original |
dxtp560bp5-500v-150maot223+3 | |
4806n
Abstract: NTD4806NT4G 4806ng 48 06ng 369ad
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Original |
ntd4806nnvd4806naec-q101ntd4806n/d+5 | |
48 09ng
Abstract: 4809ng mosfet 48 09ng 09ng 4809n mosfet on 09ng NTD4809NA-1G 09ng 040 48 369D
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Original |
ntd4809nantd4809na/d48 09ng4809ng+7 | |
09nhg
Abstract: NTD4809NHT4G 4809nhg NTD4809NH 369D 48 09NHG
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Original |
ntd4809nhntd4809nh/d09nhgntd4809nht4g+3 | |
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Contextual Info: NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4809N These Devices are Pb−Free and are RoHS Compliant |
Original |
ntd4809nnvd4809nntd4809n/d | |
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Contextual Info: NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4804N These Devices are Pb−Free and are RoHS Compliant |
Original |
ntd4804nnvd4804nntd4804n/d | |