D18.3 PACKAGE Search Results

D18.3 PACKAGE Result Highlights (5)

Part	Manufacturer	Description	Download
TPH1R306PL	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N)	Datasheet
TPH9R00CQH	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N)	Datasheet
TPHR8504PL	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N)	Datasheet
TPH9R00CQ5	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N)	Datasheet
XPH2R106NC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF)	Datasheet

D18.3 PACKAGE Datasheets (1)

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Intersil

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
D18.3 Package		Intersil	18 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE	Original	PDF	14.48KB	1

D18.3 PACKAGE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CDIP2-T18 Abstract: 2N18 18-LEAD D-6 PACKAGE Contextual Info: Hermetic Packages for Integrated Circuits Ceramic Dual-In-Line Metal Seal Packages SBDIP D18.3 MIL-STD-1835 CDIP2-T18 (D-6, CONFIGURATION C) LEAD FINISH c1 -A- 18 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE -DBASE METAL E b1 M (b) M -Bbbb S C A - B S SECTION A-A	Original	mil-std-1835 cdip2-t18 2n18 18-lead d-6 package	PDF
CDIP2-T18 Abstract: MARK S2 18-LEAD D-6 PACKAGE Contextual Info: Ceramic Package Ceramic Dual-In-Line Metal Seal Packages SBDIP c1 -A- D18.3 MIL-STD-1835 CDIP2-T18 (D-6, CONFIGURATION C) LEAD FINISH 18 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE -DBASE METAL E b1 M (b) M -Bbbb S C A - B S INCHES (c) SECTION A-A D S D	Original	mil-std-1835 cdip2-t18 mark s2 18-lead d-6 package	PDF
CDP1802 MICROPROCESSOR Abstract: CDP1802 CDP1 series cdp1800series CDP1824 CDP-1802 CDP1800-series CDP1824CD CDP1824CD3 CDP1824CE Contextual Info: • Access Time - 610ns .at VDD = 5V - 320ns .at VDD = 10V • No Precharge or Clock Required Ordering Information PACKAGE 5V 10V CDP1824CD3 CDP1824D3 SBDIP	Original	610ns 320ns cdp1824cd3 cdp1824d3 +12cdp1824/3 cdp1824c/3 32-word cdp1800-series cdp1802 cdp1802 microprocessor cdp1 series cdp1800series cdp1824 cdp-1802 cdp1824cd cdp1824ce	PDF
Contextual Info: Radiation Hardened 8-Channel Source Driver IS-2981RH, IS-2981EH Features The Star*Power Radiation Hardened IS-2981RH, IS-2981EH are monolithic devices designed for use in high-side switching applications that benefit from separate grounds for the logic and loads. The devices have a 5V to 80V operating supply	Original	is-2981rh is-2981eh -200ma fn4869	PDF
ca3306 Abstract: CA3300 CA3306CM A3300 CA3306M Contextual Info: îfÎ H A R R CA3306, CA3306A, CA3306C I S S E M I C O N D U C T O R Complete Data Sheet available via web, Harris’ home page: http://www.semi.harris.com or via Harris AnswerFAX, see Section 17 August 1997 Features 6-Bit, 15MSPS, Flash A/D Converters Description	OCR Scan	ca3306 ca3306a ca3306c 15msps +515mhz ca3300 ca3306cm a3300 ca3306m	PDF
2114 Ram pinout 18 Abstract: 9114 RAM 2114 static ram 2114 static ram ic ic 2114 MWS5114E3 9114 static ram MWS5114-3 2114 4 bit Ram pinout 2114 ram Contextual Info: MWS5114 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS CMOS technology. It is designed for use in	Original	mws5114 1024-word 2114 ram pinout 18 9114 ram +82114 static ram 2114 static ram ic ic 2114 mws5114e3 9114 static ram mws5114-3 2114 4 bit ram pinout 2114 ram	PDF
2114 Ram pinout 18 Abstract: MWS5114 MWS5114-3 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X MWS5114E1 MWS5114E2 MWS5114E2X Contextual Info: MWS5114 S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS CMOS technology. It is designed for use in	Original	mws5114 1024-word mws5114-2 mws5114-1 +9mws5114-3 2114 ram pinout 18 mws5114d1 mws5114d2 mws5114d3 mws5114d3x mws5114e1 mws5114e2 mws5114e2x	PDF
Contextual Info: MWS5114 Semiconductor 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate com ple mentary MOS CMOS technology. It is designed for use in	OCR Scan	mws5114 1024-word s5114 s5114-2 +2mws5114-1 s5114-3	PDF
Contextual Info: MWS5114 HARRIS S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM August 1996 Description Features • The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate comple mentary MOS CMOS technology. It is designed for use in	OCR Scan	mws5114 1024-word s5114 mws5114-3 +2mws5114-2 mws5114-1	PDF
memory ic 2114 Abstract: 5114E Contextual Info: MWS5114 HARRIS S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate com ple mentary MOS CMOS technology. It is designed for use in	OCR Scan	mws5114 1024-word s5114 s5114-3 +4s5114-2 s5114-1 memory ic 2114 5114e	PDF
VDR 20-100 Abstract: MWS5114 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X MWS5114E1 MWS5114E2 MWS5114E2X MWS5114E3 Contextual Info: MWS5114 TM 1024-Word x 4-Bit LSI Static RAM March 1997 Features as 2V Min • Fully Static Operation • All Inputs and Outputs Directly TTL Compatible • Industry Standard 1024 x 4 Pinout Same as Pinouts for 6514, 2114, 9114, and 4045 Types • Three-State Outputs	Original	mws5114 1024-word 200ns 250ns +10300ns mws5114e3 mws5114e2 mws5114e2x mws5114e1 mws5114d3 vdr 20-100 mws5114d1 mws5114d2 mws5114d3x	PDF
CDP1824 Abstract: CDP1802 CDP1824C CDP1824CD3 CDP1824D3 CDP1824D Contextual Info: CDP1824/3, CDP1824C/3 S E M I C O N D U C T O R High-Reliability CMOS 32-Word x 8-Bit Static Random-Access Memory March 1997 Features Description • Access Time - 610ns . . . . . . . . . . . . . . . . . . . . . . . . . . . . . at VDD = 5V - 320ns . . . . . . . . . . . . . . . . . . . . . . . . . . . . at VDD = 10V	Original	cdp1824/3 cdp1824c/3 32-word 610ns +8320ns cdp1800-series cdp1802 cdp1824 cdp1824c cdp1824cd3 cdp1824d3 cdp1824d	PDF
CDP1802 Abstract: CDP1824 CDP1824C CDP1824CD3 CDP1824D3 Contextual Info: CDP1824/3, CDP1824C/3 High-Reliability CMOS 32-Word x 8-Bit Static Random-Access Memory March 1997 Features Description • Access Time - 610ns . . . . . . . . . . . . . . . . . . . . . . . . . . . . . at VDD = 5V - 320ns . . . . . . . . . . . . . . . . . . . . . . . . . . . . at VDD = 10V	Original	cdp1824/3 cdp1824c/3 32-word 610ns +7320ns cdp1800-series cdp1802 cdp1824 cdp1824c cdp1824cd3 cdp1824d3	PDF
AL 20 MRD Contextual Info: CDP1824/3, CDP1824C/3 High-Reliability CMOS 32-Word x 8-Bit Static RandoiTi-Access Memory March 1997 Features Description • Access Time The CDP1824/3 and CDP1824C/3 types are high-reliability CMOS 32-word x 8-bit fully static random-access memories for use in CDP1800-series microprocessor systems. These	OCR Scan	cdp1824/3 cdp1824c/3 32-word cdp1800-series +3cdp1802 cdp182ons al 20 mrd	PDF

CDP1824 Abstract: CDP1824EX CDP1802 CDP1824C CDP1824CD CDP1824CE CDP1824CEX CDP1824D CDP1824E Contextual Info: CDP1824, CDP1824C S E M I C O N D U C T O R 32-Word x 8-Bit Static RAM March 1997 Features Description • Fast Access Time - VDD = 5V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 710ns - VDD = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320ns	Original	cdp1824 cdp1824c 32-word 710ns +9320ns cdp-1800 cdp1802 cdp1824ex cdp1824cd cdp1824ce cdp1824cex cdp1824d cdp1824e	PDF
CDP1802 Abstract: CDP1824 CDP1824C CDP1824CD3 CDP1824D3 Contextual Info: CDP1824/3, CDP1824C/3 TM High-Reliability CMOS 32-Word x 8-Bit Static Random-Access Memory March 1997 Features Description • Access Time - 610ns . . . . . . . . . . . . . . . . . . . . . . . . . . . . . at VDD = 5V - 320ns . . . . . . . . . . . . . . . . . . . . . . . . . . . . at VDD = 10V	Original	cdp1824/3 cdp1824c/3 32-word 610ns +7320ns cdp1800-series cdp1802 cdp1824 cdp1824c cdp1824cd3 cdp1824d3	PDF
CDP1802 Abstract: CDP1824 CDP1824C CDP1824CD CDP1824CE CDP1824CEX CDP1824D CDP1824E CDP1824EX Contextual Info: CDP1824, CDP1824C TM 32-Word x 8-Bit Static RAM March 1997 Features Description • Fast Access Time - VDD = 5V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 710ns - VDD = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320ns	Original	cdp1824 cdp1824c 32-word 710ns +9320ns cdp-1800 cdp1802 cdp1824cd cdp1824ce cdp1824cex cdp1824d cdp1824e cdp1824ex	PDF
Contextual Info: CDP1824, CDP1824C H A F R R IS S E M I C O N D U C T O R 32-Word x 8-Bit Static RAM March 1997 Features Description • Fast A c ce ss T im e - V d d = 5 V . .7 1 0 n s - V DD = 1 0 V .	OCR Scan	cdp1824 cdp1824c 32-word cdp-1800 +1cdp1802	PDF
cdp1824 Contextual Info: CDP1824, CDP1824C H A F R F R IS S E M I C O N D U C T O R 32-Word x 8-Bit Static RAM March 1997 Features Description Fast Access Time - V dd = 5 V . 710ns - VDD = 1 0 V . 320ns	OCR Scan	cdp1824 cdp1824c 32-word 710ns +3320ns cdp-1800 cdp1802	PDF
CDP1824 Abstract: CDP1824 MICROPROCESSOR Contextual Info: CDP1824, CDP1824C Semiconductor 32-Word x 8-Bit Static RAM March 1997 Features Description Fast Access Tim e - V d d = 5 V .710ns - V DD = 1 0 V . 320ns	OCR Scan	cdp1824 cdp1824c 32-word cdp-1800 +2cdp1802 cdp1824 microprocessor	PDF
CDP1802 Abstract: CDP1824 CDP1824C CDP1824CD CDP1824CE CDP1824CEX CDP1824D CDP1824E CDP1824EX Contextual Info: CDP1824, CDP1824C 32-Word x 8-Bit Static RAM March 1997 Features Description • Fast Access Time - VDD = 5V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 710ns - VDD = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320ns The CDP1824 and CDP1824C are 32-word x 8-bit fully static	Original	cdp1824 cdp1824c 32-word 710ns +9320ns cdp-1800 cdp1802 cdp1824cd cdp1824ce cdp1824cex cdp1824d cdp1824e cdp1824ex	PDF
Contextual Info: h a r r is S E M C O N D U C T O R CA 3306, C A 3306A , C A3306C 6-Bit, 1 5 M S P S , Flash A/D C onverters August 1997 Features Description • CMOS Low Power with Video Speed T y p 70mW • Parallel Conversion Technique • Signal Power Supply V o ltage.3V to 7.5V	OCR Scan	a3306c 15mhz ca3306 ca3306a +1ca3306c	PDF
rom 1K x 8 Abstract: CDM6116 CDP1800 CDP1866 CDP1867 CDP1881C CDP1881CE CDP1882 CDP1882C CDP1882CE Contextual Info: CDP1881C, CDP1882, CDP1882C S E M I C O N D U C T O R CMOS 6-Bit Latch and Decoder Memory Interfaces March 1997 Features Description • Performs Memory Address Latch and Decoder Functions Multiplexed or Non-Multiplexed The CDP1881C, CDP1882 and CDP1882C are CMOS 6-bit	Original	cdp1881c cdp1882 cdp1882c cdp1800 +8cdp1800-series cdm6116a rom 1k x 8 cdm6116 cdp1866 cdp1867 cdp1881ce cdp1882ce	PDF
ca3306 Abstract: CA3300 8 bit full adder 74 30Mhz oscilloscope CA3306M Contextual Info: CA3306, CA3306A, CA3306C 6-Bit, 15 MSPS, Flash A/D Converters August 1997 Description Features • CMOS Low Power with Video Speed T y p The CA3306 family are CMOS parallel (FLASH) analog-to-digital converters designed for applications demanding both low power	OCR Scan	ca3306 ca3306a ca3306c 15mhz +4ca3300 8 bit full adder 74 30mhz oscilloscope ca3306m	PDF

D18.3 PACKAGE Search Results

D18.3 PACKAGE Result Highlights (5)

D18.3 PACKAGE Datasheets (1)

D18.3 PACKAGE Datasheets Context Search

CDIP2-T18

CDIP2-T18

CDP1802 MICROPROCESSOR

ca3306

2114 Ram pinout 18

2114 Ram pinout 18

memory ic 2114

VDR 20-100

CDP1824

CDP1802

AL 20 MRD

CDP1824

CDP1802

CDP1802

cdp1824

CDP1824

CDP1802

rom 1K x 8

ca3306