D1255 Search Results

D1255

Contextual Info: S T U/D1255P L S amHop Microelectronics C orp. Arp,20 2005 ver1.1 P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S R DS ON ID ( m W ) Max S uper high dense cell design for low R DS (ON ). R ugged and reliable.

Contextual Info: S T U/D1255P L S amHop Microelectronics C orp. J an.03 2005 P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S R DS ON ID ( m W ) Max S uper high dense cell design for low R DS (ON ). R ugged and reliable. 110 @ V G S = -10V

Contextual Info: S T U/D1255P L S amHop Microelectronics C orp. Arp,20 2005 ver1.1 P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S R DS ON ID ( m W ) Max S uper high dense cell design for low R DS (ON ). R ugged and reliable.

EPIGAP Optoelektronik

Contextual Info: Photodiode-Chip EPC-525-0.9 17.04.2009 rev. 05 Wavelength range Type Technology Electrodes Green, selective Integrated filter GaP P anode up typ. dimensions (µm) 860 800 720 typ. thickness anode gold alloy, 1.5 µm Description Narrow bandwidth and high spectral sensitivity in

Contextual Info: LED - Chip ELC-770-15 26.04.2012 rev. 03 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs P anode up typ. dimensions (µm) 325 Ø120 typ. thickness 180 µm anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm structured, 25% covered LED-03

Contextual Info: LED - Chip ELC-840-28-1 01.07.2011 rev. 07 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs N cathode up typ. dimensions (µm) 460 360 300 typ. thickness 150 (±25) µm cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm structured, 25% covered

Contextual Info: LED - Chip EL1-750-21 01.07.2011 rev. 06 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs N cathode up typ. dimensions (µm) 1000 typ. thickness 150 (±25) µm 1000 cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm structured, 25% covered

Contextual Info: LED - Chip EL1-950-11 01.12.2011 rev. 03 Radiation Type Technology Electrodes Infrared DH AlGaAs/GaAs P anode up typ. dimensions (µm) 1000 typ. thickness 260 (±20) µm 1000 anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm, PoC-05 Optical and Electrical Characteristics

Contextual Info: Photodiode-Chip EPC-1300-0.22-3 04.07.2011 rev. 04 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP Both on top side typ. dimensions in µm 460 ±20 150 220 typ. thickness Description 330 ±20 µm Broadband photodiode with maximum response in the

Contextual Info: EPC-740-0.5 Photodiode-Chip 19.11.2007 rev. 05 Wavelength range Type Technology Electrodes Infrared, selective Integrated filter AlGaAs/GaAs P anode up typ. dimensions (µm) 460 360 300 typ. thickness 300 (±20) µm anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm

Contextual Info: Photodiode-Chip EPC-525-0.5-1 17.04.2009 rev. 05 Wavelength range Type Technology Electrodes Green, selective Integrated filter GaP P anode up typ. dimensions (µm) 430 Ø110 typ. thickness 270 (±20) µm 470 anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm

Contextual Info: LED - Chip ELC-800-25 01.07.2011 rev. 09 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs N cathode up typ. dimensions (µm) 325 Ø120 typ. thickness 150 (±25) µm cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm structured, 25% covered

Contextual Info: LED - Chip EL1-690-27 01.07.2011 rev. 04 Radiation Type Technology Electrodes Red DDH AlGaAs/AlGaAs N cathode up typ. dimensions (µm) 360 120 typ. thickness 150 (±25) µm cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm structured, 25% covered LED-05

Contextual Info: LED - Chip EL1-810-21 01.07.2011 rev. 11 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs N cathode up typ. dimensions (µm) 1000 1000 typ. thickness 150 (±25) µm cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm structured, 25% covered

EPD-440-0/0.9

Abstract: uv photodiode, GaP EPD-440-0 440-nm
Contextual Info: Photodiode EPD-440-0-0.9 11.04.2007 Preliminary rev. 03/07 Wavelength Type Technology Case UV Schottky Contact GaP TO-46 + UV-glass Description +0,1 5,1 -0,1 Ø 5,31 +0,03 +0,025 +0,05 -0,05 Ø 4,75 -0,1 2,54 Ø 4,22 Ø 5,33 Ø 0,44 -0,03 0,2 -0,025 Cathode

Equivalent IR 740

Abstract: ELC-68
Contextual Info: Photodiode EPD-740-9-0.4 6/28/2007 Preliminary rev. 01/07 Wavelength Type Technology Case Infrared SMD AlGaAs/AlGaAs TOPLED Description 2,8 ± 0,2 2,2 ± 0,1 Selective photodiode mounted in TOPLED PLCC-2 package, for easy circuit board mounting and assembling of arrays. Narrow response range 740

v40150

Contextual Info: Photodiode EPD-150-0-2.5 6/21/2007 Preliminary rev. 05/07 Wavelength Type Technology Case VUV Schottky Contact GaP TO-39 + sapphire window Description 0, 1 ± 0,03 chip location Ø9,14 ± 0,1 Ø7,62 4,50 chip location 8,13 ± 0,05 9, 90 ± 0,45 5,08 Wide bandwidth and high sensitivity from VUV up

EPC-880-1

Contextual Info: Photodiode-Chip EPC-880-1.4 Preliminary 11.04.2007 rev. 03/07 Wavelength range Type Technology Electrodes Infrared, selective Integrated filter AlGaAs/GaAs P anode up typ. dimensions (µm) 1360 1000 960 typ. thickness 300 µm anode gold alloy, 1.5 µm cathode

Contextual Info: Photodiode EPD-525-3-0.5 27.04.2007 Preliminary rev. 01/07 Wavelength Type Technology Case Blue-Green water clear GaP 3 mm plastic lens Description Selective photodiode mounted in standard 3 mm package with standoff. Narrow bandwidth and high spectral sensitivity in the range of max. eye

TO-39, UVC

Abstract: uvc photodiode photodiode 011
Contextual Info: Photodiode EPD-270-0-0.3-2 11.04.2007 Preliminary rev. 02/07 Wavelength Type Technology Case UV-C clear UV-glass + filter SiC TO-39 Description 8,33 Selective photodiode with high spectral sensitivity in the UVC range 230 nm - 285 nm , mounted in hermetically sealed TO-39 package with clear

tl8w/08

Abstract: TL8W
Contextual Info: UVA - Sensor Head Rev 03/08 This optical sensor head is designed to measure irradiance in the UVA wavelength range. It is equipped with an inbuilt amplifier which allows irradiance measurement over An several analogous decades. voltage will be output, which is

EPD-440-0-2

Abstract: uv photodiode, GaP BURNER EPD-440-0
Contextual Info: Photodiode EPD-440-0-2.5 11.04.2007 Preliminary rev. 03/07 Wavelength Type Technology Case UV Schottky Contact GaP TO-39 + UV-glass Description ± 0,1 Chip Location Ø9,14 Ø7,62 ± 0,1 8,13 5,90 5,08 ± 0,1 9, 90 ± 0,45 0, 1 ± 0,03 3,25 Anode ± 0,05 05

Contextual Info: Photodiode EPD-740-5-0.5 19.11.2007 rev. 02 Wavelength Type Technology Case Infrared water clear AlGaAs/GaAs 5 mm plastic lens Description Selective photodiode mounted in standard 5 mm package without standoff. Narrow response range 740 nm peak by means of integrated filter

Contextual Info: Photodiode EPD-365-0-0.9 11.04.2007 Preliminary rev. 03/07 Wavelength Type Technology Case UV Schottky Contact GaP TO-46 + UG-11 filter Description +0,1 5,1 -0,1 Ø 5,31 +0,03 +0,025 +0,05 -0,05 Ø 4,75 -0,1 2,54 Ø 4,22 Ø 5,33 Ø 0,44 -0,03 0,2 -0,025 Cathode