D1208 Search Results
D1208 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| LMK1D1208IRHAT | Texas Instruments | 8-channel output, 1.8-V, 2.5-V, and 3.3-V LVDS buffer with I2C 40-VQFN -40 to 105 |
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| LMK1D1208RHDT | Texas Instruments | 8-channel output LVDS 1.8-V, 2.5-V, and 3.3-V buffer 28-VQFN -40 to 105 |
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| LMK1D1208IRHAR | Texas Instruments | 8-channel output, 1.8-V, 2.5-V, and 3.3-V LVDS buffer with I2C 40-VQFN -40 to 105 |
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| LMK1D1208RHDR | Texas Instruments | 8-channel output LVDS 1.8-V, 2.5-V, and 3.3-V buffer 28-VQFN -40 to 105 |
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| CDCLVD1208RHDT | Texas Instruments | Low Jitter, 2-Input Selectable 1:8 Universal-to-LVDS Buffer 28-VQFN -40 to 85 |
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D1208 Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| D1208 | Semelab | METAL GATE RF SILICON FET | Original | 17.01KB | 2 | ||
| D12/08 | USHA | Rectifier diode. All purpose high power rectifier diodes, Non-controllable rectifiers. Free-wheeling diodes. Vrrm = 800V, Vrsm = 900V. | Original | 458.36KB | 4 | ||
| D1208UK | Semelab | GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET | Original | 50.6KB | 2 | ||
| D1208UK | Semelab | Metal Gate RF Silicon FET | Original | 62.48KB | 4 |
D1208 Price and Stock
Fairview Microwave Inc FMAD1208Precision SMA Female (Jack) to TNC Female (Jack) Adapter 1.2 VSWR |
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FMAD1208 | 1 |
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FMAD1208 | Bulk | 55 | 1 |
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Samtec Inc FFSD-25-D-12.08-01-N |
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FFSD-25-D-12.08-01-N |
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Samtec Inc HCSD-05-D-12.08-01-N |
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HCSD-05-D-12.08-01-N |
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Samtec Inc HCSD-07-D-12.08-01-N |
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HCSD-07-D-12.08-01-N |
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Samtec Inc FFMD-12-D-12.08-01 |
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FFMD-12-D-12.08-01 |
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D1208 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TetraFET D1208UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 12.5V – 500MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F O FEATURES H M I J N DK PIN 1 SOURCE (COMMON) PIN 2 DRAIN 1 PIN 3 DRAIN 2 |
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d1208uk500mhz400mhz | |
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Contextual Info: TetraFET D1208UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 12.5V – 500MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F O FEATURES H M I J N DK PIN 1 SOURCE (COMMON) PIN 2 DRAIN 1 |
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d1208uk500mhz400mhz | |
D1208UKContextual Info: TetraFET D1208UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 12.5V – 500MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F O FEATURES H M I J N DK PIN 1 SOURCE (COMMON) PIN 2 DRAIN 1 |
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d1208uk500mhz400mhz | |
D1208UKContextual Info: TetraFET D1208UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 12.5V – 500MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F O FEATURES H M I J N DK PIN 1 SOURCE (COMMON) PIN 2 DRAIN 1 PIN 3 DRAIN 2 |
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d1208uk500mhz650rqj400mhz | |
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Contextual Info: nil Vrr r = mi TetraFET D1208UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4 0 W -1 2 .5 V -5 0 0 M H z PUSH-PULL I 3 2 p i s . rs • I'b l! JU— 4 ir — G (4 p is ) 4 FEATURES u • SIMPLIFIED AMPLIFIER DESIGN |
OCR Scan |
d1208uk | |
D1208UKContextual Info: TetraFET D1208UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 12.5V – 500MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J M I N • SUITABLE FOR BROAD BAND APPLICATIONS |
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d1208uk500mhz | |
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Contextual Info: TetraFET IM I itti llll SEME D1208UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4 0 W - 1 2 . 5 V - 500MHz PUSH-PULL r i FEATURES "tizzi • SIMPLIFIED AMPLIFIER DESIGN f"T • SUITABLE FOR BROAD BAND APPLICATIONS |
OCR Scan |
d1208uk500mhz | |
D1208UKContextual Info: TetraFET D1208UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 12.5V – 500MHz PUSH–PULL A C B 2 pls 3 2 K 1 E D 5 4 G (4 pls) F FEATURES H J M I N • SUITABLE FOR BROAD BAND APPLICATIONS DK PIN 1 |
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d1208uk500mhz | |
RT5330
Abstract: D251206 vishay crcw0805 106 40401 D25P/CRCW1206 CRCW0805 crcw1206 datasheet diode b27 ta 562r CRCW2512
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40401-802/eia-575crcw1210crcw1218crcw2010+11 | |
CECC 40401-004
Abstract: CRCW0201 CRCW0603 CRCW0805 CRCW1206 D.-CRCW CRCW0603 0.0 RT1 EIA-575 CRCW2512
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40401-802/eia-575crcw0201crcw1210crcw1218+10 | |
D12 vishay
Abstract: SMD resistors 2012 marking code BV SMD Transistor 562R D251206 1608 SMD resistors derating dapd11
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2002/95/ec08-apr-05d12 vishaysmd resistors 2012+5 | |
D1208050B
Abstract: guideline pad dimension 1210 CRCW0603 CRCW0805 CRCW1206 D251206 D120805 D110603
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sn/1040401-802/eia-575crcw040208-apr-05+8 | |
resistors 0201
Abstract: CRCW2512
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crcw0201crcw0402crcw0603crcw0805+6 | |
D1106
Abstract: D120805
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2002/95/ec08-apr-05d1106d120805 | |
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Contextual Info: D.TR/CRCW.TR Vishay Thick Film, Rectangular, Trimmable, Resistor Chips FEATURES • Thick film on high quality ceramic • Solder contacts on Ni barrier layer • Extremely low resistance values 0.1 Ω • Can be trimmed to required value after insertion |
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40401-802/eia-575crcw0402trd11trcrcw0603tr+6 | |
D10P
Abstract: EIA-575 CRCW2512 CRCW0402
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Original |
40401-802/eia-575crcw0402crcw0603crcw0805+8 | |
BFM12
Abstract: BFM33 BFM34 BFM21 BFM-12 BFM32 D1022UK D1053UK D1015UK
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OCR Scan |
bfm12bfm21bfm22bfm23+10 | |
d12 draloricContextual Info: D AP, CRCW-AP Vishay Draloric Thick Film, Rectangular Chip Resistors for Conductive Gluing FEATURES • • • • • AgPd-Terminations for conductive gluing Stability ΔR/R = 1 % for 1000 h at 70 °C Metal glaze on high quality ceramic Compliant to RoHS directive 2002/95/EC |
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2002/95/ece24hay11-mar-11d12 draloric | |
D110603
Abstract: ta 562r CRCW0201 CRCW0603 CRCW0805 CRCW1206 D.-CRCW EIA575 D2140
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40401-802/eia-575crcw0201crcw1210crcw1218+11 | |
d12 draloricContextual Info: D AP, CRCW-AP Vishay Draloric Thick Film, Rectangular Chip Resistors for Conductive Gluing FEATURES • • • • • AgPd-Terminations for conductive gluing Stability ΔR/R = 1 % for 1000 h at 70 °C Metal glaze on high quality ceramic Compliant to RoHS directive 2002/95/EC |
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2002/95/ec1005m1608m2012m+7 | |
d12 draloric
Abstract: draloric d25 d110603 D120805
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2002/95/ece24trademarks2011/65/eu12-mar-12+4 | |
d0415
Abstract: transistor D1303 D1309 D0902 D09-15
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bd9271kutd0415transistor d1303d1309+2 | |
Burr Brown 3510am
Abstract: ner eN8 capacitor 3421J A5 GNC mosfet OPA103 OPA104 TF 6221 HEN LED display LOG100 3510CM Burr Brown OPA Application Reference
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OCR Scan |
b5734305/395-61c8burr brown 3510amner en8 capacitor+8 | |
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Contextual Info: D. AP Vishay Thick Film, Rectangular Chip Resistors for Conductive Gluing FEATURES • • • • Metal glaze on high quality ceramic Protective overglaze AgPd-Terminations for conductive gluing Compliant with "Restriction of the use of Hazardous Substances" RoHS directive 2002/95/EC (issue 2004) |
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2002/95/ec08-apr-05 | |