SD101AWS
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JCET Group
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Schottky barrier diode in SOD-323 package with 60 V peak reverse voltage, 15 mA forward current, low forward voltage drop, negligible reverse recovery time, and 2 pF typical capacitance at 1 MHz. |
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SD101AW
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JCET Group
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Schottky barrier diode SD101AW in SOD-123 package with low forward voltage drop, 60V peak reverse voltage, 15mA forward current, and fast reverse recovery time of 1.0ns. |
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SD101AWS S1
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JCET Group
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SD101A WS Schottky barrier diode in SOD-323 package features 60 V peak reverse voltage, 15 mA continuous forward current, 1 ns reverse recovery time, and low forward voltage drop, suited for high-speed switching applications. |
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SD101A
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SUNMATE electronic Co., LTD
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Schottky barrier diode in DO-35 package with low forward voltage drop, fast reverse recovery time of 1.0 ns, peak repetitive reverse voltage up to 60 V, and junction capacitance of 2.0 pF at 0 V. |
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SD101AW 环保
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JCET Group
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Schottky barrier diode SD101AW in SOD-123 package features low forward voltage drop, negligible reverse recovery time of 1.0ns, 60V peak repetitive reverse voltage, 15mA forward current, and 400mW power dissipation. |
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SD101AWS
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CREATEK Microelectronics
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Schottky Barrier Diode in SOD-323 package with 60V DC reverse voltage, 15mA forward current, low forward voltage drop, and 2.2pF total capacitance, suited for low power consumption and SMPS applications. |
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SD101AWS
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode D101AWS - SD101CWS with low forward voltage drop, negligible reverse recovery time, low capacitance, and guard ring protection, available in SOD-323 package. |
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SD101AW
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode SD101AW-SD101CW with low forward voltage drop, negligible reverse recovery time, 60V peak repetitive reverse voltage, 15mA continuous forward current, and very low reverse capacitance of 2.0pF. |
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SD101AWS
