D10030 Search Results

amcc q1300t

Abstract: Q3500T Q1300T Q5000T schematic of TTL XOR Gates ebe switches q5000 ECL100K ECL10K K 4080
Contextual Info: Single Cop; PRELIMINARY DEVICE SPECIFICATION W it h '- e a J9 Q M C R O C IR C U I T S C O R P O R A T I O N Q5000 SERIES ECL/TTL LOGIC ARRAYS O DESCRIPTION The A M C C Q 5000 Series of log ic arrays is co m p rise d of five p ro d u cts ranging in density from 1300 to 5000

2SJ449

Abstract: IEI-1213 MEI-1202 MF-1134
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

Contextual Info: D10030–Silicon Carbide Schottky Diode Zero R ecovery VRRM = 300V Rectifier IF = 10A Qc = 11.5nC Features • • • • • • • Package 300 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior

Contextual Info: D10030–Silicon Carbide Schottky Diode Zero R ecovery VRRM = 300V Rectifier IF = 10A Qc = 11.5nC Features • • • • • • • Package 300 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior

2SJ449

Abstract: m30 tf 125 transistor 2sj449 M30 THERMAL CUTOFF IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ449 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ449 is P-Channel MOS Field Effect Transistor de- PACKAGE DIMENSIONS signed for high voltage switching applications. in millimeters 4.5 ±0.2

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

J449

Abstract: transistor nec j449 nec j449 j449 mos fet transistor j449 fet nec j449 D10030 J449 fet 2SJ449 aaat
Contextual Info: M O S fé S IM S b m h 7 > V * $ M O S Field Effect T ra n sisto r 2SJ449 M O S FET I l f f l 2SJ449t ëP31i ’ * ; MÊÉâ / \ " 9 - MOS FETT, I i Œ ? ^ - f -7 51 > M Y -y ^ > ? ' J 3 É tC ftiS T -1 -0 ¡f# m 0250 V t ï t iiJ Œ T 'fS * > f f i â t T'T o

CSD10030

Abstract: CSD10030A mj 10033
Contextual Info: D10030–Silicon Carbide Schottky Diode Zero R VRRM = 300 V Rectifier ecovery IF = 10 A Qc = 11.5 nC Features • • • • • • • Package 300-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

Contextual Info: D10030–Silicon Carbide Schottky Diode Zero R VRRM = 300 V Rectifier ecovery IF = 10 A Qc = 11.5 nC Features • • • • • • • Package 300-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation