D1 MARKING CODE DPAK TRANSISTOR Search Results

FDD6030L

Abstract: CBVK741B019 F63TNR FDD6680 FDD marking
Contextual Info: FDD6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This

Date Code Marking STMicroelectronics PACKAGE DPAK

Abstract: 13473
Contextual Info: MJD31CT4-A Low voltage NPN power transistor Datasheet − production data Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP type MJD32C 3 1 Application

d1 marking code dpak transistor

Abstract: MJD32CT4
Contextual Info: MJD32C Low voltage PNP power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252

d1 marking code dpak transistor

Contextual Info: MJD32CT4-A Low voltage PNP power transistor Datasheet − production data Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the NPN type MJD31C 3 1 Application

3543

Contextual Info: MJD31C Low voltage NPN power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252

MARKING L4 SOT89

Contextual Info: Supertex inc. DN2450 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage These low threshold depletion-mode normally-on transistors

369D

Abstract: MJD41C MJD41CRL MJD41CRLG MJD41CT4 MJD42C TIP41 TIP42
Contextual Info: MJD41C NPN MJD42C (PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves

transistor D406

Abstract: d406 transistor D406 JEDEC TO-252 LAND PATTERN AOD406 305 d-pak marking code 0/d406 transistor
Contextual Info: Jan 2003 AOD406 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD406 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core

TRANSISTOR D412

Abstract: D412 transistor d412 DPAK d412 omega D412 d-pak AOD412 JEDEC TO-252 LAND PATTERN alpha omega D412 D412 AOD412 30V 85A
Contextual Info: July 2003 AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.

transistor d404

Abstract: D404 transistor d404 JEDEC TO-252 transistor datasheet d404 AOD404 alpha omega aos Lot Code Week D404 BE
Contextual Info: July 2003 AOD404 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD404 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.

d414

Abstract: d414 transistor transistor d414 D-414 alpha omega D414 TRANSISTOR AOD414 AOD414
Contextual Info: July 2003 AOD414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD414 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core

Silicon Power Transistor DPAK MJD42c

Abstract: MJD42C TIP41 TIP42 369D MJD41C MJD41CRL MJD41CRLG MJD41CT4 dpak 369C
Contextual Info: MJD41C NPN MJD42C (PNP) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves

FDD6030L

Abstract: CBVK741B019 F63TNR FDD6680
Contextual Info: FDD6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This

ic 4510

Abstract: ST901T STD901T 4510 901T HIGH VOLTAGE NPN DARLINGTON st901 automotive ignition ST TAB 060
Contextual Info: ST901T STD901T High voltage NPN Darlington transistor for ignition coil Features • High voltage special Darlington structure ■ Very rugged bipolar technology ■ High DC current gain TAB TAB 3 1 Application ■ DPAK 3 1 High ruggedness electronic ignition for small

Contextual Info: ST901T STD901T High voltage NPN Darlington transistor for ignition coil Features • High voltage special Darlington structure ■ Very rugged bipolar technology ■ High DC current gain TAB TAB 3 1 Application ■ DPAK 1 High ruggedness electronic ignition for small

MJD253

Contextual Info: MJD243 NPN , MJD253 (PNP) Preferred Device Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features http://onsemi.com 4.0 A, 100 V, 12.5 W

369D

Abstract: MJD41C MJD41CRL MJD41CRLG MJD41CT4 MJD42C TIP41 TIP42 TIP42 Application Note
Contextual Info: MJD41C NPN MJD42C (PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves

d1 marking code dpak transistor

Abstract: dpak-3 1000 watt amplifier TIP31 FOOTPRINT PNP Silicon Power Transistor DPAK 369A-13 NPN Silicon Power Transistor DPAK 500 watt power circuit diagram 500 watts amplifier all ic data
Contextual Info: MJD31C NPN MJD32C (PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves

d1 marking code dpak transistor

Abstract: d marking code dpak transistor data base dpak data sheet tip41 file type 369D MJD41C MJD41CRL MJD41CRLG MJD41CT4 MJD42C
Contextual Info: MJD41C NPN MJD42C (PNP) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves

Contextual Info: MJD41C, NJVMJD41CT4G NPN , MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS

369D

Abstract: mje3055 transistor MJE3055 MJD2955 MJD2955G MJD2955T4 MJD3055 MJE2955 MJD3055G
Contextual Info: MJD2955 PNP MJD3055 (NPN) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves

MJD2955T4

Abstract: d marking code dpak transistor MJE2955 datasheet mje3055 MJD3055 MJE2955 369D MJD2955 MJD2955G MJE2955 power amplifier circuit
Contextual Info: MJD2955 PNP MJD3055 (NPN) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves

A 673 C2 transistor

Abstract: tip41 369D-01
Contextual Info: MJD41C, NJVMJD41CT4G NPN , MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS

Contextual Info: MJD41C, NJVMJD41CT4G NPN , MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS