D0S47 Search Results

Contextual Info: • bb53^31 D0S4704 STS B A P X N AMER PHILIPS/DISCRETE BF821 BF823 b?E D J V SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature plastic envelope intended for application in thick and thin-film circuits. Primarily intended fo r use in telephony and professional communication equipment. N-P-N

Contextual Info: £Z7 SCS-THOMSON Ä 7# *MILiera !0 S M54HC194 M74HC194 4 BIT PIPO SHIFT REGISTER • HIGH SPEED tPD = 12 ns TYP.) AT Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 4 nA (MAX.) AT Ta = 25 °C ■ OUTPUT DRIVE CAPABILITY 1 0 LSTTLLOADS ■ SYMMETRICAL OUTPUT IMPEDANCE

F15N06L

Contextual Info: ti3G2271 0D5M773 Th? HAS R FM 15N 05L/06L R FP15N 05L/06L HARRIS N-Channel Logic Level Power Field-Effect Transistors L2 FET A ug ust 19 91 Package Features TO-204AA BOTTOM VIEW • 15A , 5 0 V and 6 0 V • rD S (O N ) = 0 .1 4 « DRAIN /( F L A N G E )

Contextual Info: International po-smnt IO R Rectifier IR F 7 4 2 1 D 1 preliminary FETKY MOSFET andf Schottky Diode • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation 5 T echnology SO-8 Footprint

Contextual Info: HM101510 Series 1,048,576-w ord x 1-bit Random Access Mem ory The Hitachi HM101510 is ECL 100 K compatible, 1,048,576 w ords by 1 b its re a d /w rite random access memory developed for high speed systems. Pin Arrangement A15 C 1 28 □ A14 Features A16 C 2