D0865 Search Results

ADV3201

Abstract: D0865 ADV3226 ADV3227 ADV3226-EVALZ
Contextual Info: 750 MHz, 16 x 16 Analog Crosspoint Switch ADV3226/ADV3227 FEATURES SER/PAR D0 D1 D2 D3 D4 CLK GENERAL DESCRIPTION The ADV3226/ADV3227 are high speed 16 × 16 analog crosspoint switch matrices. They offer a −3 dB signal bandwidth greater than 750 MHz and channel switch times of less than 20 ns with

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK08G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK08G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

Contextual Info: SiC Silicon Carbide Diode 5 t h Ge ner ation thin Q! T M 650V SiC Schottky Diode IDL08G65C5 Final Da ta Sh eet Rev. 2.0, 2013-12-05 Po wer Ma nage m ent & M ulti m ark et 5th Generation thinQ! SiC Schottky Diode 1 IDL08G65C5 ThinPAK 8x8 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

Contextual Info: 750 MHz, 16 x 16 Analog Crosspoint Switch ADV3226/ADV3227 FEATURES SER/PAR D0 D1 D2 D3 D4 CLK GENERAL DESCRIPTION The ADV3226/ADV3227 are high speed 16 × 16 analog crosspoint switch matrices. They offer a −3 dB signal bandwidth greater than 750 MHz and channel switch times of less than 20 ns with

D0865C5

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH08G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the

Contextual Info: 800 MHz, 4:1 Analog Multiplexer ADV3221/ADV3222 FEATURES CS A0 A1 D Q D LATCH D D Q Q LATCH LATCH D D Q LATCH ENABLE Q LATCH DECODE IN0 IN1 IN2 IN3 G = +1 G = +2 OUT Q LATCH CK1 CK2 100kΩ 08652-001 Excellent ac performance −3 dB bandwidth 800 MHz (200 mV p-p)

D0865

Abstract: ADV3221 ADV3221ARZ ADV3222 HA4344 MS-012-AC R-16
Contextual Info: 800 MHz, 4:1 Analog Multiplexer ADV3221/ADV3222 CS A0 A1 D Q D LATCH D D Q Q LATCH LATCH D D Q LATCH ENABLE Q LATCH IN0 IN1 IN2 IN3 G = +1 G = +2 OUT Q LATCH CK1 CK2 100kΩ 08652-001 Excellent ac performance −3 dB bandwidth 800 MHz (200 mV p-p) 750 MHz (2 V p-p)

D0865C5

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH08G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH08G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

D0865

Abstract: 16SOICN ADV3222 ADV3221 ADV3221ARZ HA4344 MS-012-AC R-16 ADV3221-EVALZ
Contextual Info: 800 MHz4:1模拟多路复用器 ADV3221/ADV3222 出色的交流性能 −3 dB带宽 800 MHz 200 mV峰峰值 750 MHz(2 V峰峰值) 压摆率：2,400 V/ s 低功耗：75 mW (VS = ±5 V) 出色的视频性能 0.1 dB增益平坦度：100 MHz 0.02%差分增益误差/0.02°差分相位误差 (RL = 150 Ω)

D1065

Abstract: D0865
Contextual Info: Chipscale Termination Arrays ISO-9001 Registered High purity alumina substrate • • • • Superior TaNFilm resistors on ceramic substrate High density networks on a reduced footprint Excellent solution for thin, portable products Custom array solutions also available

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH08G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH08G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

b0565

Contextual Info: Ceramic Ball Grid Termination Arrays IR C Ad vanced Film Di vision IRC Adv Division ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○