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Samtec Inc


Samtec Inc TCSD-04-S-60.00-01-N Ribbon Cables / IDC Cables IDC Socket Cable Assemblies
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	TCSD-04-S-60.00-01-N					1 $14.42 10 $14.32 100 $13.40 1000 $12.81 10000 $12.81	Get Quote
	TCSD-04-S-60.00-01-N					1 $14.54 10 $14.10 100 $13.01 1000 $12.66 10000 $12.66	Get Quote
Samtec Inc FFMD-04-S-60.00-01 Ribbon Cables / IDC Cables .050 Tiger Eye IDC Ribbon Cable Assemblies
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	FFMD-04-S-60.00-01					1 $14.50 10 $14.17 100 $13.70 1000 $13.70 10000 $13.70	Get Quote
	FFMD-04-S-60.00-01					1 $14.50 10 $14.31 100 $14.05 1000 $14.05 10000 $14.05	Get Quote
Samtec Inc IDSD-04-S-60.00-ST8 Ribbon Cables / IDC Cables Slim Body Double-Row IDC Socket Assemblies
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	IDSD-04-S-60.00-ST8					1 $15.20 10 $15.04 100 $12.84 1000 $11.16 10000 $11.16	Get Quote
	IDSD-04-S-60.00-ST8					1 $15.28 10 $14.82 100 $12.40 1000 $10.51 10000 $10.51	Get Quote
Samtec Inc IDMD-04-S-60.00-G-ST8 Ribbon Cables / IDC Cables Slim Body Double-Row IDC Male Assemblies
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	IDMD-04-S-60.00-G-ST8					1 $15.58 10 $15.46 100 $14.20 1000 $13.51 10000 $13.51	Get Quote
	IDMD-04-S-60.00-G-ST8					1 $15.59 10 $15.05 100 $13.63 1000 $13.23 10000 $13.23	Get Quote
Samtec Inc HCMD-04-S-60.00-02-S Ribbon Cables / IDC Cables IDC Socket and Terminal Cable Assemblies
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	HCMD-04-S-60.00-02-S					1 $18.37 10 $17.34 100 $14.28 1000 $11.42 10000 $11.42	Get Quote
	HCMD-04-S-60.00-02-S					1 $19.55 10 $18.32 100 $14.34 1000 $11.50 10000 $11.50	Get Quote

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D04S60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
smd diode marking f4 Abstract: idd04 Contextual Info: D04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features VDC 600 • Switching behavior benchmark Qc 8 nC • No reverse recovery/ No forward recovery IF 4 A • Revolutionary semiconductor material - Silicon Carbide V • No temperature influence on the switching behavior	Original	IDD04S60C 20mA2) PG-TO252 IDD04S60C smd diode marking f4 idd04	PDF
PG-TO252-3-1 Contextual Info: SDP04S60, D04S60 SDT04S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery	Original	SDP04S60, SDD04S60 SDT04S60 PG-TO220-2-2. P-TO252-3- P-TO220-3 SDP04S60 P-TO220-3 PG-TO252-3-1	PDF
D04S60 Abstract: d04s6 Contextual Info: SDP04S60, D04S60 SDT04S60 Preliminary data Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Product Summary V VRRM 600 Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark Qc 13 nC No reverse recovery	Original	SDP04S60, SDD04S60 SDT04S60 P-TO220-2-2. P-TO252-3-1. P-TO220-3-1. SDP04S60 D04S60 d04s6	PDF
Contextual Info: SDP04S60 D04S60 Preliminary data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery IF	Original	SDP04S60 SDD04S60 P-TO252-3-1 P-TO220-3-1 Q67040-S4369 D04S60	PDF
Contextual Info: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Data Sheet Rev. 2.0, 2010-01-08 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV04S60C Description	Original	IDV04S60C IDVxxS60C O220FullPAK	PDF
D04S60 Abstract: P-TO252 Q67040-S4368 Q67040-S4369 Q67040-S4445 SDD04S60 SDP04S60 SDT04S60 SCHOTTKY 4A 600V Contextual Info: SDP04S60, D04S60 SDT04S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery	Original	SDP04S60, SDD04S60 SDT04S60 P-TO220-2-2. P-TO252-3-1. P-TO220-3-1. SDP04S60 Q67040-S4369 D04S60 D04S60 P-TO252 Q67040-S4368 Q67040-S4369 Q67040-S4445 SDD04S60 SDP04S60 SDT04S60 SCHOTTKY 4A 600V	PDF
Contextual Info: IDH04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 8 nC IF 4 A • No temperature influence on the switching behavior	Original	IDH04S60C PG-TO220-2 D04S60C	PDF
d04s60c Abstract: IDT04S60C JESD22 D04S60 Contextual Info: IDT04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 8 nC IF 4 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDT04S60C PG-TO220-2-2 D04S60C d04s60c IDT04S60C JESD22 D04S60	PDF
D04S60C Abstract: IDT04S60C JESD22 PG-TO220-2-2 Contextual Info: IDT04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 8 nC IF 4 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDT04S60C PG-TO220-2-2 D04S60C D04S60C IDT04S60C JESD22 PG-TO220-2-2	PDF
D04S60 Abstract: to220 pcb footprint smd schottky diode marking 321 Schottky diode TO220 diode schottky 600v D04S60C TO252-3 material case SDP04S60 P-TO252 PG-TO252-3-1 Contextual Info: SDP04S60, D04S60 SDT04S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery	Original	SDP04S60, SDD04S60 SDT04S60 PG-TO220-2-2. P-TO252 P-TO220 SDP04S60 P-TO220-3 Q67040-S4369 D04S60 D04S60 to220 pcb footprint smd schottky diode marking 321 Schottky diode TO220 diode schottky 600v D04S60C TO252-3 material case SDP04S60 P-TO252 PG-TO252-3-1	PDF
D04S60C Abstract: IDH04S60C JESD22 Contextual Info: IDH04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 8 nC IF 4 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDH04S60C PG-TO220-2 D04S60C D04S60C IDH04S60C JESD22	PDF
D04S60C Abstract: TO252-3 material case to252-3-11 IDD04S60C infineon msl DIODE smd marking Ag TO252 rthjc JESD22 smd diode f4 51 D04S60 Contextual Info: D04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 8 nC IF 4 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDD04S60C PG-TO252 D04S60C D04S60C TO252-3 material case to252-3-11 IDD04S60C infineon msl DIODE smd marking Ag TO252 rthjc JESD22 smd diode f4 51 D04S60	PDF
D04S60C Abstract: diode it25 Contextual Info: IDH04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 8 nC IF 4 A • No temperature influence on the switching behavior	Original	IDH04S60C IDH04S60C PG-TO220-2 D04S60C diode it25	PDF
Infineon power diffusion process Abstract: Schottky diode TO220 D04S60C JESD22 Contextual Info: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Data Sheet Rev. 2.0, 2010-01-08 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV04S60C Description	Original	IDV04S60C IDVxxS60C O220FullPAK Infineon power diffusion process Schottky diode TO220 D04S60C JESD22	PDF

DSA0032037 Abstract: PG-TO252-3-1 Contextual Info: SDP04S60, D04S60 SDT04S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery	Original	SDP04S60, SDD04S60 SDT04S60 PG-TO220-2-2. PG-TO252-3-1. PG-TO220-3-1. SDP04S60 DSA0032037 PG-TO252-3-1	PDF
PG-TO252-3-1 Abstract: PG-TO-252-3-1 Contextual Info: SDP04S60, D04S60 SDT04S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery	Original	SDP04S60, SDD04S60 SDT04S60 PG-TO220-2-2. PG-TO252-3-1. PG-TO220-3-1. SDP04S60 PG-TO252-3-1 PG-TO-252-3-1	PDF
Contextual Info: D04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features VDC 600 • Switching behavior benchmark Qc 8 nC • No reverse recovery/ No forward recovery IF 4 A • Revolutionary semiconductor material - Silicon Carbide V • No temperature influence on the switching behavior	Original	IDD04S60C PG-TO252 20mA2)	PDF
P-TO252 Abstract: D04S60 diode schottky 600v TO252 rthjc Q67040-S4368 Q67040-S4369 SDD04S60 SDP04S60 SDT04S60 Contextual Info: SDP04S60, D04S60 SDT04S60 Preliminary data Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Product Summary Revolutionary semiconductor V 600 VRRM material - Silicon Carbide Switching behavior benchmark Qc 13 nC No reverse recovery	Original	SDP04S60, SDD04S60 SDT04S60 P-TO220-2-21. P-TO252-3-1. P-TO220-3-1. SDP04S60 Q67040-S4369 D04S60 P-TO252 D04S60 diode schottky 600v TO252 rthjc Q67040-S4368 Q67040-S4369 SDD04S60 SDP04S60 SDT04S60	PDF
to220 pcb footprint Abstract: D04S60 P-TO252 Schottky diode TO220 d 1398 infineon 6260 TO252-3 rthjc Q67040-S4368 Q67040-S4369 Q67040-S4445 Contextual Info: SDP04S60, D04S60 SDT04S60 Final data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery	Original	SDP04S60, SDD04S60 SDT04S60 P-TO220-2-2. P-TO252-3-1. P-TO220-3-1. SDP04S60 Q67040-S4369 D04S60 to220 pcb footprint D04S60 P-TO252 Schottky diode TO220 d 1398 infineon 6260 TO252-3 rthjc Q67040-S4368 Q67040-S4369 Q67040-S4445	PDF
D04S60C Abstract: IDV04S60C Contextual Info: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Data Sheet Rev. 2.0, 2010-01-08 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV04S60C Description	Original	IDV04S60C IDVxxS60C O220FullPAK D04S60C IDV04S60C	PDF
D04S60 Abstract: smd schottky diode marking 321 PG-TO252-3-1 2t -3-6-5 smd PG-TO-252-3-1 SDP04S60 SCHOTTKY 4A 600V Contextual Info: SDP04S60, D04S60 SDT04S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery	Original	SDP04S60, SDD04S60 SDT04S60 PG-TO220-2-2. P-TO252 P-TO220 SDP04S60 P-TO220-3 D04S60 smd schottky diode marking 321 PG-TO252-3-1 2t -3-6-5 smd PG-TO-252-3-1 SCHOTTKY 4A 600V	PDF
Contextual Info: IDT04S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 8 nC • No reverse recovery/ No forward recovery I F @ T C < 140°C 4 A I F @ T C < 100°C 6 A • Revolutionary semiconductor material - Silicon Carbide	Original	IDT04S60C PG-TO220-2-2	PDF
D04S60C Abstract: D04S60 Q67040-S4368 Q67040-S4369 Q67040-S4445 SDD04S60 SDP04S60 SDT04S60 SCHOTTKY 4A 600V Contextual Info: SDP04S60, D04S60 SDT04S60 Final data Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Product Summary V VRRM 600 Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark Qc 13 nC No reverse recovery IF 4	Original	SDP04S60, SDD04S60 SDT04S60 P-TO220-2-2. P-TO252-3-1. P-TO220-3-1. SDP04S60 Q67040-S4369 D04S60 D04S60C D04S60 Q67040-S4368 Q67040-S4369 Q67040-S4445 SDD04S60 SDP04S60 SDT04S60 SCHOTTKY 4A 600V	PDF

D04S60 Search Results

D04S60 Price and Stock

Samtec Inc TCSD-04-S-60.00-01-N

Samtec Inc FFMD-04-S-60.00-01

Samtec Inc IDSD-04-S-60.00-ST8

Samtec Inc IDMD-04-S-60.00-G-ST8

Samtec Inc HCMD-04-S-60.00-02-S

D04S60 Datasheets Context Search

smd diode marking f4

PG-TO252-3-1

D04S60

D04S60

d04s60c

D04S60C

D04S60

D04S60C

D04S60C

D04S60C

Infineon power diffusion process

DSA0032037

PG-TO252-3-1

P-TO252

to220 pcb footprint

D04S60C

D04S60

D04S60C