D033FL Search Results

Contextual Info: DECchip 21171 Core Logic Chipset Technical Reference Manual Order Number: EC-QE18A-TE Revision/Update Information: Digital Equipment Corporation Maynard, Massachusetts aam i3t. 0 0 3 3 7 3 3 0 22 Preliminary—Subject to Change Ju ne 1995 W hile D igital believes th e inform ation in th is publication is correct as of th e d ate of publication,

Contextual Info: Am28F256 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ ■ CMOS Low power consumption Flasherase Electrical Bulk Chip-Erase

Contextual Info: Data Sheet July 1998 microelectronics group Lucent Technologies Bell Labs Innovations NetLight 1417J4A 1300 nm Laser Gigabit Transceiver Transmitter disable input Wide dynamic range receiver with InGaAs PIN photodetector TTL signal-detect output Low power dissipation

42s4260

Contextual Info: N E C ELECTRONICS INC blE D N EC NEC Electronics Inc. • b427525 0033037 053 « N E C E #iPD424260A/L, 42S4260A/L 262,144 X 16-Bit Dynamic CMOS RAM 17 Description The /JPD424260A/L and /JPD42S4260A/L are fast-page dynam ic RAMs organized as 262,144 words by 16 bits

Contextual Info: HN29VT800 Series, HN29VB800 Series 1048576-word X 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-781A Z Rev. 1.0 Apr. 25, 1997 Description The Hitachi HN29VT800 Series, HN29VB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS R ash Memory with DINOR (Divided bitline NOR) type memory cells, that realize programming and erase

Contextual Info: Am28F256A Advanced Micro Devices 256 Kilobit 32,768 x 8-Blt CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ High performance ■ CMOS low power consumption ■ — 30 mA maximum active current — 100 nA maximum standby current

mitsubishi ordering information

Abstract: 00336b
Contextual Info: HN29WT800 Series HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537A Z Rev. 1.0 May. 9, 1997 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitline NOR) type memory cells, that realize programming and erase

Contextual Info: PRELIMINARY Am79C981 Integrated Multiport Repeater Plus IMR+™ Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Enhanced version of AMD's Am79C980 Integrated Multiport Repeater™ (IMR™) chip with the following enhancements: - Additional Management Port features

21171-BA

Abstract: 21171-CA DSW 100 M2 12H18 21164a tb0j
Contextual Info: DECchip 21171 Core Logic Chipset Technical Reference Manual Order Number: EC-QE18A-TE Revision/Update Information: Preliminary—Subject to Change Digital Equipment Corporation Maynard, Massachusetts • a a m i 3 t. 0 0 3 3 7 3 3 022 ■ Powered by ICminer.com Electronic-Library Service CopyRight 2003

Contextual Info: P r o d u c t S p e c if ic a t io n Z86E04/08 OTP CMOS Z8 8-BlT MICROCONTROLLER FEATURES • 18-Pin Package DIP, SOIC 124 Bytes of General-Purpose RAM ■ Low Noise Programmable Two Programmable 8-Bit Counter/Timers Each with a 6-Bit Programmable Prescaler.

Contextual Info: RX1305 • Ideal for 418 MHz, 3 V Data Receivers in U K a nd USA • High-Sensitivity Passive Design with No R F Oscillation • 5 kb/s Baseband Data Rate • Sim ple to A p p ly with Low External Parts Count • Rugged, Surface-M ount Package with 1.3 cm2 Footprint

Contextual Info: KMM372F3200AK3 DRAM Module ELECTRONICS KMM372F3200AK3/AS3, KMM372F3280AK3/AS3 Extended Data Out Mode 32Mx72 DRAM DIMM with ECC, 3.3V Preliminary GENERAL DESCRIPTION FEATURES The Samsung KMM372F320 8 0A is a 32M bit x 72 Dynamic RAM high density memory module. The

3BS03

Contextual Info: HN29WT800 Series HN29WB800 Series 1048576-word x 8-bit / 524288-word X 16-bit CMOS Flash Memory HITACHI ADE-203-537A Z Rev. 1.0 May. 9,1997 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitline NOR) type memory cells, that realize programming and erase